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Article: Selective chemical etching of InP over InAlAs

TitleSelective chemical etching of InP over InAlAs
Authors
Issue Date1992
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 1992, v. 139 n. 7, p. 2046-2048 How to Cite?
AbstractWe report the selective chemical etching of InP/InAlAs heterostructures. The selectivity of InP over InAlAs by 1:1:2 of HCl:H 3PO 4:CH 3COOH is above 85. Better-defined mesa etching patterns, however, are obtained by a solution with lower CH 3COOH content such as 1:1:1 with a selectivity of 34. The etching recipe reported here is promising for InP-based heterostructure device applications.
Persistent Identifierhttp://hdl.handle.net/10722/148925
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157

 

DC FieldValueLanguage
dc.contributor.authorHe, Yanen_HK
dc.contributor.authorLiang, BWen_HK
dc.contributor.authorTien, NCen_HK
dc.contributor.authorTu, CWen_HK
dc.date.accessioned2012-06-20T06:16:50Z-
dc.date.available2012-06-20T06:16:50Z-
dc.date.issued1992en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 1992, v. 139 n. 7, p. 2046-2048en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148925-
dc.description.abstractWe report the selective chemical etching of InP/InAlAs heterostructures. The selectivity of InP over InAlAs by 1:1:2 of HCl:H 3PO 4:CH 3COOH is above 85. Better-defined mesa etching patterns, however, are obtained by a solution with lower CH 3COOH content such as 1:1:1 with a selectivity of 34. The etching recipe reported here is promising for InP-based heterostructure device applications.en_HK
dc.languageengen_US
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.titleSelective chemical etching of InP over InAlAsen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026895987en_HK
dc.identifier.volume139en_HK
dc.identifier.issue7en_HK
dc.identifier.spage2046en_HK
dc.identifier.epage2048en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHe, Yan=7404942028en_HK
dc.identifier.scopusauthoridLiang, BW=7202071204en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.scopusauthoridTu, CW=35401048600en_HK

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