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Article: Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

TitleMolecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors
Authors
Issue Date1991
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 1991, v. 196 n. 2, p. 295-303 How to Cite?
AbstractWe have investigated the luminescent and device properties of pseudomorphic AlGaAs/InGaAs modulation-doped field effect transistors (MODFETs) with different InAs molar fractions in the InGaAs channel. Molecular beam epitaxy, which simulataneously deposits group III atoms and As 4 molecules on the substrate surface, was used to grow the random alloy In xGa 1-xAs channel layer for x≤0.4, and migration-enhanced epitaxy (MEE), which alternatingly deposits group III atoms and As 4 molecules on the surface, was used to grow sequential layers of InAs and GaAs in the channel region with large effective x (up to 0.5). For 1 microm gate length MODFETs with random alloy In xGa 1-xAs channels the transconductance g m and saturation drain current I dss exhibit a maximum at x = 0.17 because of the superior electron transport properties of InGaAs compared with GaAs. g m and I dss decrease drastically for x higher than 0.32 as a result of misfit dislocation generation. The photoluminescence peaks of In xGa 1-xAs channels of these MODFET samples show a similar trend, strong intensity for the In 0.17Ga 0.83As channel and very weak intensity for the In 0.4Ga 0.6As channel. However, MODFETs with a nominally (InAs) 2(GaAs) 2 channel grown by MEE exhibit higher g m, I dss and photoluminescence intensity than those with an In 0.4Ga 0.6As channel. © 1991.
Persistent Identifierhttp://hdl.handle.net/10722/148924
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726

 

DC FieldValueLanguage
dc.contributor.authorZhang, Jen_HK
dc.contributor.authorTien, NCen_HK
dc.contributor.authorLin, EWen_HK
dc.contributor.authorWieder, HHen_HK
dc.contributor.authorKu, WHen_HK
dc.contributor.authorTu, CWen_HK
dc.contributor.authorPoker, DBen_HK
dc.contributor.authorChu, SNGen_HK
dc.date.accessioned2012-06-20T06:16:50Z-
dc.date.available2012-06-20T06:16:50Z-
dc.date.issued1991en_HK
dc.identifier.citationThin Solid Films, 1991, v. 196 n. 2, p. 295-303en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148924-
dc.description.abstractWe have investigated the luminescent and device properties of pseudomorphic AlGaAs/InGaAs modulation-doped field effect transistors (MODFETs) with different InAs molar fractions in the InGaAs channel. Molecular beam epitaxy, which simulataneously deposits group III atoms and As 4 molecules on the substrate surface, was used to grow the random alloy In xGa 1-xAs channel layer for x≤0.4, and migration-enhanced epitaxy (MEE), which alternatingly deposits group III atoms and As 4 molecules on the surface, was used to grow sequential layers of InAs and GaAs in the channel region with large effective x (up to 0.5). For 1 microm gate length MODFETs with random alloy In xGa 1-xAs channels the transconductance g m and saturation drain current I dss exhibit a maximum at x = 0.17 because of the superior electron transport properties of InGaAs compared with GaAs. g m and I dss decrease drastically for x higher than 0.32 as a result of misfit dislocation generation. The photoluminescence peaks of In xGa 1-xAs channels of these MODFET samples show a similar trend, strong intensity for the In 0.17Ga 0.83As channel and very weak intensity for the In 0.4Ga 0.6As channel. However, MODFETs with a nominally (InAs) 2(GaAs) 2 channel grown by MEE exhibit higher g m, I dss and photoluminescence intensity than those with an In 0.4Ga 0.6As channel. © 1991.en_HK
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.titleMolecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistorsen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026106712en_HK
dc.identifier.volume196en_HK
dc.identifier.issue2en_HK
dc.identifier.spage295en_HK
dc.identifier.epage303en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridZhang, J=8063600400en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.scopusauthoridLin, EW=7201721150en_HK
dc.identifier.scopusauthoridWieder, HH=35444772000en_HK
dc.identifier.scopusauthoridKu, WH=7102926849en_HK
dc.identifier.scopusauthoridTu, CW=35335610600en_HK
dc.identifier.scopusauthoridPoker, DB=7004838938en_HK
dc.identifier.scopusauthoridChu, SNG=7403621882en_HK

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