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Article: Application of the high-order symplectic FDTD scheme to the curved three-dimensional perfectly conducting objects

TitleApplication of the high-order symplectic FDTD scheme to the curved three-dimensional perfectly conducting objects
Authors
KeywordsCurved conducting surfaces
Diagonal split-cell model
High-order difference
Radar cross section
Symplectic integrator
Issue Date2007
PublisherJohn Wiley & Sons, Inc. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/37176
Citation
Microwave And Optical Technology Letters, 2007, v. 49 n. 4, p. 931-934 How to Cite?
AbstractA high-order symplectic finite-difference time-domain (SFDTD) scheme using the diagonal split-cell model is presented to analyze electromagnetic scattering of the curved three-dimensional perfectly conducting objects. On the one hand, for the undistorted cells, the fourth-order accurate spatial difference is employed. On the other hand, for the completely distorted cells, the treatment of the curved surfaces is based on the diagonal split-cell model. Finally, for the partially distorted cells, the interpolation strategy is proposed to keep the field components continuous. The numerical experiments suggest that the diagonal SFDTD scheme can obtain more accurate results than both the staircased SFDTD scheme and the traditional diagonal FDTD method. Furthermore, in view of the high numerical stability, the improved symplectic scheme does not need to decrease time increment to comply with the stability criterion. © 2007 Wiley Periodicals, Inc.
Persistent Identifierhttp://hdl.handle.net/10722/148882
ISSN
2021 Impact Factor: 1.311
2020 SCImago Journal Rankings: 0.304
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorSha, Wen_HK
dc.contributor.authorWu, Xen_HK
dc.contributor.authorChen, Men_HK
dc.contributor.authorHuang, Zen_HK
dc.date.accessioned2012-06-20T06:16:05Z-
dc.date.available2012-06-20T06:16:05Z-
dc.date.issued2007en_HK
dc.identifier.citationMicrowave And Optical Technology Letters, 2007, v. 49 n. 4, p. 931-934en_HK
dc.identifier.issn0895-2477en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148882-
dc.description.abstractA high-order symplectic finite-difference time-domain (SFDTD) scheme using the diagonal split-cell model is presented to analyze electromagnetic scattering of the curved three-dimensional perfectly conducting objects. On the one hand, for the undistorted cells, the fourth-order accurate spatial difference is employed. On the other hand, for the completely distorted cells, the treatment of the curved surfaces is based on the diagonal split-cell model. Finally, for the partially distorted cells, the interpolation strategy is proposed to keep the field components continuous. The numerical experiments suggest that the diagonal SFDTD scheme can obtain more accurate results than both the staircased SFDTD scheme and the traditional diagonal FDTD method. Furthermore, in view of the high numerical stability, the improved symplectic scheme does not need to decrease time increment to comply with the stability criterion. © 2007 Wiley Periodicals, Inc.en_HK
dc.languageengen_US
dc.publisherJohn Wiley & Sons, Inc. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/37176en_HK
dc.relation.ispartofMicrowave and Optical Technology Lettersen_HK
dc.subjectCurved conducting surfacesen_HK
dc.subjectDiagonal split-cell modelen_HK
dc.subjectHigh-order differenceen_HK
dc.subjectRadar cross sectionen_HK
dc.subjectSymplectic integratoren_HK
dc.titleApplication of the high-order symplectic FDTD scheme to the curved three-dimensional perfectly conducting objectsen_HK
dc.typeArticleen_HK
dc.identifier.emailSha, W:shawei@hku.hken_HK
dc.identifier.authoritySha, W=rp01605en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/mop.22306en_HK
dc.identifier.scopuseid_2-s2.0-34047193738en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34047193738&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume49en_HK
dc.identifier.issue4en_HK
dc.identifier.spage931en_HK
dc.identifier.epage934en_HK
dc.identifier.isiWOS:000244964500058-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridSha, W=34267903200en_HK
dc.identifier.scopusauthoridWu, X=7407066038en_HK
dc.identifier.scopusauthoridChen, M=24560485600en_HK
dc.identifier.scopusauthoridHuang, Z=12243904200en_HK
dc.identifier.issnl0895-2477-

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