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Article: Weak localization of bulk channels in topological insulator thin films

TitleWeak localization of bulk channels in topological insulator thin films
Authors
Issue Date2011
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2011, v. 84 n. 12, article no. 125138 How to Cite?
AbstractWeak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very strong, enough to result in the topological phase transition. However, the recently observed WAL in topological insulators seems to have an ambiguous origin from the bulk states. Starting from the effective model for three-dimensional topological insulators, we find that the lowest two-dimensional (2D) bulk subbands of a topological insulator thin film can be described by the modified massive Dirac model. We derive the magnetoconductivity formula for both the 2D bulk subbands and surface bands. Because with relatively large gap, the 2D bulk subbands may lie in the regimes where the unitary behavior or even weak localization (WL) is also expected, instead of always WAL. As a result, the bulk states may contribute small magnetoconductivity or even compensate the WAL from the surface states. Inflection in magnetoconductivity curves may appear when the bulk WL channels outnumber the surface WAL channels, providing a signature of the weak localization from the bulk states. © 2011 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/147670
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7051/10P
HKUST3/CRF/09
Funding Information:

We thank H. T. He, J. N. Wang, F. C. Zhang, Junren Shi, W. Q. Chen, and B. Zhou for helpful discussions. This work is supported by the Research Grant Council of Hong Kong under Grant Nos. HKU 7051/10P and HKUST3/CRF/09.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorLu, HZen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2012-05-29T06:07:38Z-
dc.date.available2012-05-29T06:07:38Z-
dc.date.issued2011en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2011, v. 84 n. 12, article no. 125138en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/147670-
dc.description.abstractWeak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very strong, enough to result in the topological phase transition. However, the recently observed WAL in topological insulators seems to have an ambiguous origin from the bulk states. Starting from the effective model for three-dimensional topological insulators, we find that the lowest two-dimensional (2D) bulk subbands of a topological insulator thin film can be described by the modified massive Dirac model. We derive the magnetoconductivity formula for both the 2D bulk subbands and surface bands. Because with relatively large gap, the 2D bulk subbands may lie in the regimes where the unitary behavior or even weak localization (WL) is also expected, instead of always WAL. As a result, the bulk states may contribute small magnetoconductivity or even compensate the WAL from the surface states. Inflection in magnetoconductivity curves may appear when the bulk WL channels outnumber the surface WAL channels, providing a signature of the weak localization from the bulk states. © 2011 American Physical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleWeak localization of bulk channels in topological insulator thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailLu, HZ: luhz@hku.hken_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityLu, HZ=rp01599en_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1103/PhysRevB.84.125138en_HK
dc.identifier.scopuseid_2-s2.0-80053908777en_HK
dc.identifier.hkuros200177-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80053908777&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue12en_HK
dc.identifier.eissn1550-235X-
dc.identifier.isiWOS:000295371900007-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectQuantum Order in Novel Materials: Superconductivity and Topological Order-
dc.relation.projectQuantum Order in Novel Materials: Superconductivity and Topological Order-
dc.relation.projectQuantum Order in Novel Materials: Superconductivity and Topological Order-
dc.identifier.scopusauthoridLu, HZ=24376662200en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK

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