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Article: Quantum blockade and loop current induced by a single lattice defect in graphene nanoribbons

TitleQuantum blockade and loop current induced by a single lattice defect in graphene nanoribbons
Authors
Issue Date2009
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2009, v. 79 n. 11, article no. 115403 How to Cite?
AbstractWe investigate theoretically the electronic transport properties in narrow graphene ribbons with an adatom-induced defect. It is found that the lowest conductance step of a metallic graphene nanoribbon may develop a dip even down to zero at certain values of the Fermi energy due to the defect. Accompanying the occurrence of the conductance dip, a loop current develops around the defect. We show how the properties of the conductance dip depend on the parameters of the defect such as the relative position and severity of the defect as well as the width and edges of the graphene ribbons. In particular, for metallic armchair-edges graphene nanoribbons, whether the conductance dip appears or not, they can be controlled by choosing the position of the single defect. © 2009 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/147668
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYan, JYen_HK
dc.contributor.authorZhang, Pen_HK
dc.contributor.authorSun, Ben_HK
dc.contributor.authorLu, HZen_HK
dc.contributor.authorWang, Zen_HK
dc.contributor.authorDuan, Sen_HK
dc.contributor.authorZhao, XGen_HK
dc.date.accessioned2012-05-29T06:07:38Z-
dc.date.available2012-05-29T06:07:38Z-
dc.date.issued2009en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2009, v. 79 n. 11, article no. 115403en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/147668-
dc.description.abstractWe investigate theoretically the electronic transport properties in narrow graphene ribbons with an adatom-induced defect. It is found that the lowest conductance step of a metallic graphene nanoribbon may develop a dip even down to zero at certain values of the Fermi energy due to the defect. Accompanying the occurrence of the conductance dip, a loop current develops around the defect. We show how the properties of the conductance dip depend on the parameters of the defect such as the relative position and severity of the defect as well as the width and edges of the graphene ribbons. In particular, for metallic armchair-edges graphene nanoribbons, whether the conductance dip appears or not, they can be controlled by choosing the position of the single defect. © 2009 The American Physical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleQuantum blockade and loop current induced by a single lattice defect in graphene nanoribbonsen_HK
dc.typeArticleen_HK
dc.identifier.emailLu, HZ: luhz@hku.hken_HK
dc.identifier.authorityLu, HZ=rp01599en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1103/PhysRevB.79.115403en_HK
dc.identifier.scopuseid_2-s2.0-63149108584en_HK
dc.identifier.hkuros242122-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63149108584&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume79en_HK
dc.identifier.issue11en_HK
dc.identifier.isiWOS:000264768900110-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, JY=23991981700en_HK
dc.identifier.scopusauthoridZhang, P=35328811200en_HK
dc.identifier.scopusauthoridSun, B=7401984457en_HK
dc.identifier.scopusauthoridLu, HZ=24376662200en_HK
dc.identifier.scopusauthoridWang, Z=16744725900en_HK
dc.identifier.scopusauthoridDuan, S=7102434764en_HK
dc.identifier.scopusauthoridZhao, XG=7407576881en_HK

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