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Article: Coupled spin and valley physics in monolayers of MoS 2 and other group-VI dichalcogenides

TitleCoupled spin and valley physics in monolayers of MoS 2 and other group-VI dichalcogenides
Authors
KeywordsCoupled spins
Dichalcogenides
Electron-doped
Frequency-dependent
Hole-doped systems
Issue Date2012
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2012, v. 108 n. 19 How to Cite?
AbstractWe show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS 2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence-band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley-contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photoinduced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multivalley materials with strong spin-orbit coupling and inversion symmetry breaking. © 2012 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/146900
ISSN
2015 Impact Factor: 7.645
2015 SCImago Journal Rankings: 3.731
ISI Accession Number ID
Funding AgencyGrant Number
U.S. Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division
Research Grant Council of Hong Kong
ORNL
Funding Information:

We acknowledge useful discussions with D. Mandrus, S. Okamoto, and J.-Q. Yan. We are grateful to W.-G. Zhu for technical support in first-principles band structure calculations. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division (D. X.), by Research Grant Council of Hong Kong (G. B. L. and W. Y.), and by the Laboratory Directed Research and Development Program of ORNL (W. F.).

References

 

DC FieldValueLanguage
dc.contributor.authorXiao, Den_HK
dc.contributor.authorLiu, GBen_HK
dc.contributor.authorFeng, Wen_HK
dc.contributor.authorXu, Xen_HK
dc.contributor.authorYao, Wen_HK
dc.date.accessioned2012-05-23T05:49:04Z-
dc.date.available2012-05-23T05:49:04Z-
dc.date.issued2012en_HK
dc.identifier.citationPhysical Review Letters, 2012, v. 108 n. 19en_HK
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/146900-
dc.description.abstractWe show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS 2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence-band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley-contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photoinduced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multivalley materials with strong spin-orbit coupling and inversion symmetry breaking. © 2012 American Physical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.subjectCoupled spins-
dc.subjectDichalcogenides-
dc.subjectElectron-doped-
dc.subjectFrequency-dependent-
dc.subjectHole-doped systems-
dc.titleCoupled spin and valley physics in monolayers of MoS 2 and other group-VI dichalcogenidesen_HK
dc.typeArticleen_HK
dc.identifier.emailYao, W: wangyao@hku.hken_HK
dc.identifier.authorityYao, W=rp00827en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevLett.108.196802en_HK
dc.identifier.scopuseid_2-s2.0-84860752361en_HK
dc.identifier.hkuros199700en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84860752361&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume108en_HK
dc.identifier.issue19en_HK
dc.identifier.eissn1079-7114-
dc.identifier.isiWOS:000303662500015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXiao, D=35249533800en_HK
dc.identifier.scopusauthoridLiu, GB=23971421500en_HK
dc.identifier.scopusauthoridFeng, W=36092816600en_HK
dc.identifier.scopusauthoridXu, X=36672409300en_HK
dc.identifier.scopusauthoridYao, W=35141935300en_HK

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