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Article: Modelling and simulation of self-ordering in anodic porous alumina
Title | Modelling and simulation of self-ordering in anodic porous alumina | ||||||
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Authors | |||||||
Keywords | Anodic porous alumina Anodizations Barrier layer thickness Barrier layers Continuity equations | ||||||
Issue Date | 2011 | ||||||
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/electacta | ||||||
Citation | Electrochimica Acta, 2011, v. 56 n. 27, p. 9998-10008 How to Cite? | ||||||
Abstract | Real-time evolution of pre-textured anodic porous alumina growth during anodization is numerically simulated in two-dimensional cases based on a kinetic model involving the Laplacian electric field potential distribution and a continuity equation for current density within the oxide body. Ion current densities governed by the Cabrera-Mott equation in high electric field theory are formed by ion migration within the oxide as well as across the metal/oxide (m/o) and oxide/electrolyte (o/e) interfaces, and the movements of the m/o and o/e interfaces due to oxidation and electric field assisted oxide decomposition, respectively, are governed by Faraday's law. Typical experimental results, such as linear voltage dependence of the barrier layer thickness and pore diameter, time evolution of the current density, scalloped shape of the barrier layer, and the extreme difference in the reaction rates between pore bottoms and pore walls, are successfully predicted. Our simulations revealed the existence of a domain of model parameters within which pre-textured porous structures which do not satisfy self-ordering configurations are driven into self-ordering configurations through a self-adjustment process. Our experimental results also verify the existence of the self-adjustment process during anodization. © 2011 Elsevier Ltd. All Rights Reserved. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/146877 | ||||||
ISSN | 2023 Impact Factor: 5.5 2023 SCImago Journal Rankings: 1.159 | ||||||
ISI Accession Number ID |
Funding Information: Simulations were performed on the HPCPOWER 64-bit (HPCPOWER2) System in the Computer Center of The University of Hong Kong. The authors wish to thank K.Y. Ng and S. Wang for providing the anodization experiments setup. The work described in this paper was supported by grants from the Research Grants Council (Project No. HKU7159/10E), as well as from the University Grants Committee (Project No. SEG-HKU06) of the Hong Kong Special Administration Region, P.R. China. | ||||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, C | en_HK |
dc.contributor.author | Ngan, AHW | en_HK |
dc.date.accessioned | 2012-05-23T05:43:39Z | - |
dc.date.available | 2012-05-23T05:43:39Z | - |
dc.date.issued | 2011 | en_HK |
dc.identifier.citation | Electrochimica Acta, 2011, v. 56 n. 27, p. 9998-10008 | en_HK |
dc.identifier.issn | 0013-4686 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/146877 | - |
dc.description.abstract | Real-time evolution of pre-textured anodic porous alumina growth during anodization is numerically simulated in two-dimensional cases based on a kinetic model involving the Laplacian electric field potential distribution and a continuity equation for current density within the oxide body. Ion current densities governed by the Cabrera-Mott equation in high electric field theory are formed by ion migration within the oxide as well as across the metal/oxide (m/o) and oxide/electrolyte (o/e) interfaces, and the movements of the m/o and o/e interfaces due to oxidation and electric field assisted oxide decomposition, respectively, are governed by Faraday's law. Typical experimental results, such as linear voltage dependence of the barrier layer thickness and pore diameter, time evolution of the current density, scalloped shape of the barrier layer, and the extreme difference in the reaction rates between pore bottoms and pore walls, are successfully predicted. Our simulations revealed the existence of a domain of model parameters within which pre-textured porous structures which do not satisfy self-ordering configurations are driven into self-ordering configurations through a self-adjustment process. Our experimental results also verify the existence of the self-adjustment process during anodization. © 2011 Elsevier Ltd. All Rights Reserved. | en_HK |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/electacta | en_HK |
dc.relation.ispartof | Electrochimica Acta | en_HK |
dc.rights | NOTICE: this is the author’s version of a work that was accepted for publication in Electrochimica Acta. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Electrochimica Acta, 2011, v. 56 n. 27, p. 9998-10008. DOI: 10.1016/j.electacta.2011.08.090 | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.subject | Anodic porous alumina | en_HK |
dc.subject | Anodizations | en_HK |
dc.subject | Barrier layer thickness | en_HK |
dc.subject | Barrier layers | en_HK |
dc.subject | Continuity equations | - |
dc.title | Modelling and simulation of self-ordering in anodic porous alumina | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Cheng, C: chuan@hku.hk | en_HK |
dc.identifier.email | Ngan, AHW: hwngan@hkucc.hku.hk | - |
dc.identifier.authority | Ngan, AHW=rp00225 | en_HK |
dc.description.nature | postprint | - |
dc.identifier.doi | 10.1016/j.electacta.2011.08.090 | en_HK |
dc.identifier.scopus | eid_2-s2.0-80054922987 | en_HK |
dc.identifier.hkuros | 199698 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-80054922987&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 56 | en_HK |
dc.identifier.issue | 27 | en_HK |
dc.identifier.spage | 9998 | en_HK |
dc.identifier.epage | 10008 | en_HK |
dc.identifier.isi | WOS:000297399100044 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Ngan, AHW=7006827202 | en_HK |
dc.identifier.scopusauthorid | Cheng, C=51565473900 | en_HK |
dc.identifier.issnl | 0013-4686 | - |