File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Modelling and simulation of self-ordering in anodic porous alumina

TitleModelling and simulation of self-ordering in anodic porous alumina
Authors
KeywordsAnodic porous alumina
Anodizations
Barrier layer thickness
Barrier layers
Continuity equations
Issue Date2011
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/electacta
Citation
Electrochimica Acta, 2011, v. 56 n. 27, p. 9998-10008 How to Cite?
AbstractReal-time evolution of pre-textured anodic porous alumina growth during anodization is numerically simulated in two-dimensional cases based on a kinetic model involving the Laplacian electric field potential distribution and a continuity equation for current density within the oxide body. Ion current densities governed by the Cabrera-Mott equation in high electric field theory are formed by ion migration within the oxide as well as across the metal/oxide (m/o) and oxide/electrolyte (o/e) interfaces, and the movements of the m/o and o/e interfaces due to oxidation and electric field assisted oxide decomposition, respectively, are governed by Faraday's law. Typical experimental results, such as linear voltage dependence of the barrier layer thickness and pore diameter, time evolution of the current density, scalloped shape of the barrier layer, and the extreme difference in the reaction rates between pore bottoms and pore walls, are successfully predicted. Our simulations revealed the existence of a domain of model parameters within which pre-textured porous structures which do not satisfy self-ordering configurations are driven into self-ordering configurations through a self-adjustment process. Our experimental results also verify the existence of the self-adjustment process during anodization. © 2011 Elsevier Ltd. All Rights Reserved.
Persistent Identifierhttp://hdl.handle.net/10722/146877
ISSN
2015 Impact Factor: 4.803
2015 SCImago Journal Rankings: 1.391
ISI Accession Number ID
Funding AgencyGrant Number
Research Grants CouncilHKU7159/10E
University Grants Committee of the Hong Kong Special Administration Region, P.R. ChinaSEG-HKU06
Funding Information:

Simulations were performed on the HPCPOWER 64-bit (HPCPOWER2) System in the Computer Center of The University of Hong Kong. The authors wish to thank K.Y. Ng and S. Wang for providing the anodization experiments setup. The work described in this paper was supported by grants from the Research Grants Council (Project No. HKU7159/10E), as well as from the University Grants Committee (Project No. SEG-HKU06) of the Hong Kong Special Administration Region, P.R. China.

References

 

DC FieldValueLanguage
dc.contributor.authorCheng, Cen_HK
dc.contributor.authorNgan, AHWen_HK
dc.date.accessioned2012-05-23T05:43:39Z-
dc.date.available2012-05-23T05:43:39Z-
dc.date.issued2011en_HK
dc.identifier.citationElectrochimica Acta, 2011, v. 56 n. 27, p. 9998-10008en_HK
dc.identifier.issn0013-4686en_HK
dc.identifier.urihttp://hdl.handle.net/10722/146877-
dc.description.abstractReal-time evolution of pre-textured anodic porous alumina growth during anodization is numerically simulated in two-dimensional cases based on a kinetic model involving the Laplacian electric field potential distribution and a continuity equation for current density within the oxide body. Ion current densities governed by the Cabrera-Mott equation in high electric field theory are formed by ion migration within the oxide as well as across the metal/oxide (m/o) and oxide/electrolyte (o/e) interfaces, and the movements of the m/o and o/e interfaces due to oxidation and electric field assisted oxide decomposition, respectively, are governed by Faraday's law. Typical experimental results, such as linear voltage dependence of the barrier layer thickness and pore diameter, time evolution of the current density, scalloped shape of the barrier layer, and the extreme difference in the reaction rates between pore bottoms and pore walls, are successfully predicted. Our simulations revealed the existence of a domain of model parameters within which pre-textured porous structures which do not satisfy self-ordering configurations are driven into self-ordering configurations through a self-adjustment process. Our experimental results also verify the existence of the self-adjustment process during anodization. © 2011 Elsevier Ltd. All Rights Reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/electactaen_HK
dc.relation.ispartofElectrochimica Actaen_HK
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Electrochimica Acta. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Electrochimica Acta, 2011, v. 56 n. 27, p. 9998-10008. DOI: 10.1016/j.electacta.2011.08.090-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAnodic porous aluminaen_HK
dc.subjectAnodizationsen_HK
dc.subjectBarrier layer thicknessen_HK
dc.subjectBarrier layersen_HK
dc.subjectContinuity equations-
dc.titleModelling and simulation of self-ordering in anodic porous aluminaen_HK
dc.typeArticleen_HK
dc.identifier.emailCheng, C: chuan@hku.hken_HK
dc.identifier.emailNgan, AHW: hwngan@hkucc.hku.hk-
dc.identifier.authorityNgan, AHW=rp00225en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1016/j.electacta.2011.08.090en_HK
dc.identifier.scopuseid_2-s2.0-80054922987en_HK
dc.identifier.hkuros199698en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80054922987&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume56en_HK
dc.identifier.issue27en_HK
dc.identifier.spage9998en_HK
dc.identifier.epage10008en_HK
dc.identifier.isiWOS:000297399100044-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridNgan, AHW=7006827202en_HK
dc.identifier.scopusauthoridCheng, C=51565473900en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats