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Article: Effect of magnetic field on electron transport in HgTe/CdTe quantum wells: numerical analysis

TitleEffect of magnetic field on electron transport in HgTe/CdTe quantum wells: numerical analysis
Authors
Issue Date2012
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2012, v. 85 n. 12, article no. 125401 How to Cite?
AbstractThe effect of magnetic field on electron transport in the inverted band structure of HgTe/CdTe quantum well is investigated. Although magnetic field breaks the time-reversal symmetry, the quantum spin Hall effect can still survive at large magnetic field up to 10 T. Moreover, two quantum anomalous Hall-like phases emerge, in which the system only has a spin-up or spin-down edge state at a given sample edge and the edge current is spin polarized. By tuning the Fermi energy, the system can transit between the quantum spin Hall phase and two quantum anomalous Hall-like phases, so the polarized direction of the edge current is well controllable. Thus the spin selectivity can be realized for potential applications of spintronics. Due to the quantum spin and anomalous Hall-like effects, the longitudinal and Hall resistances exhibit quantum plateaus. In addition, at certain magnetic field, some exotic plateaus like 23 fractional quantum Hall effect are also observed, where edge states with the same spin counterpropagate at the one edge. At last, these plateaus are hardly affected by Rashba spin-orbit interaction, Zeeman effect, and Anderson disorder. © 2012 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/146413
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
Funding AgencyGrant Number
NSF-China10821403
10974236
11074174
NBRP of China
RGC from the government of HKSARHKU 705611P
Funding Information:

This work was financially supported by NSF-China under Grants No. 10821403, No. 10974236, and No. 11074174, NBRP of China, and RGC Grant No. HKU 705611P from the government of HKSAR.

Grants

 

DC FieldValueLanguage
dc.contributor.authorChen, JCen_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorSun, QFen_US
dc.date.accessioned2012-04-24T07:52:14Z-
dc.date.available2012-04-24T07:52:14Z-
dc.date.issued2012en_US
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2012, v. 85 n. 12, article no. 125401en_US
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10722/146413-
dc.description.abstractThe effect of magnetic field on electron transport in the inverted band structure of HgTe/CdTe quantum well is investigated. Although magnetic field breaks the time-reversal symmetry, the quantum spin Hall effect can still survive at large magnetic field up to 10 T. Moreover, two quantum anomalous Hall-like phases emerge, in which the system only has a spin-up or spin-down edge state at a given sample edge and the edge current is spin polarized. By tuning the Fermi energy, the system can transit between the quantum spin Hall phase and two quantum anomalous Hall-like phases, so the polarized direction of the edge current is well controllable. Thus the spin selectivity can be realized for potential applications of spintronics. Due to the quantum spin and anomalous Hall-like effects, the longitudinal and Hall resistances exhibit quantum plateaus. In addition, at certain magnetic field, some exotic plateaus like 23 fractional quantum Hall effect are also observed, where edge states with the same spin counterpropagate at the one edge. At last, these plateaus are hardly affected by Rashba spin-orbit interaction, Zeeman effect, and Anderson disorder. © 2012 American Physical Society.-
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.titleEffect of magnetic field on electron transport in HgTe/CdTe quantum wells: numerical analysisen_US
dc.typeArticleen_US
dc.identifier.emailWang, J: jianwang@hku.hken_US
dc.identifier.authorityWang, J=rp00799en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.85.125401-
dc.identifier.scopuseid_2-s2.0-84863251374-
dc.identifier.hkuros199352en_US
dc.identifier.volume85en_US
dc.identifier.issue12, article no. 125401-
dc.identifier.isiWOS:000300971700002-
dc.publisher.placeUnited Statesen_US
dc.relation.projectConductance fluctuation of topological insulators as well as graphene systems that exhibit quantum anomalous Hall effect in the presence of spin-dependent disorders-

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