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Article: Flexible write-once-read-many-times memory device based on a nickel oxide thin film
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TitleFlexible write-once-read-many-times memory device based on a nickel oxide thin film
 
AuthorsYu, Q2
Liu, Y2
Chen, TP3
Liu, Z3
Yu, YF2
Lei, HW2
Zhu, J2
Fung, S1
 
KeywordsMemory
NiO
Switching
WORM
Conductive filaments
 
Issue Date2012
 
PublisherIEEE.
 
CitationIEEE Transactions on Electron Devices, 2012, v. 59 n. 3, p. 858-862 [How to Cite?]
DOI: http://dx.doi.org/10.1109/TED.2011.2179939
 
AbstractA write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 10 4. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. © 2011 IEEE.
 
ISSN0018-9383
2012 Impact Factor: 2.062
2012 SCImago Journal Rankings: 1.261
 
DOIhttp://dx.doi.org/10.1109/TED.2011.2179939
 
ISI Accession Number IDWOS:000300580600048
Funding AgencyGrant Number
National Science Foundation of China60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

Manuscript received July 11, 2011; revised October 27, 2011; accepted December 8, 2011. Date of publication January 4, 2012; date of current version February 23, 2012. This work was supported in part by National Science Foundation of China under Project 60806040, by the Fundamental Research Funds for the Central Universities under Project ZYGX2009X006, by the Young Scholar Fund of Sichuan under Project 2011JQ0002, and by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The review of this brief was arranged by Editor S. Deleonibus.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorYu, Q
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorChen, TP
 
dc.contributor.authorLiu, Z
 
dc.contributor.authorYu, YF
 
dc.contributor.authorLei, HW
 
dc.contributor.authorZhu, J
 
dc.contributor.authorFung, S
 
dc.date.accessioned2012-04-24T07:52:10Z
 
dc.date.available2012-04-24T07:52:10Z
 
dc.date.issued2012
 
dc.description.abstractA write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 10 4. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. © 2011 IEEE.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationIEEE Transactions on Electron Devices, 2012, v. 59 n. 3, p. 858-862 [How to Cite?]
DOI: http://dx.doi.org/10.1109/TED.2011.2179939
 
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2011.2179939
 
dc.identifier.epage862
 
dc.identifier.hkuros199172
 
dc.identifier.isiWOS:000300580600048
Funding AgencyGrant Number
National Science Foundation of China60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

Manuscript received July 11, 2011; revised October 27, 2011; accepted December 8, 2011. Date of publication January 4, 2012; date of current version February 23, 2012. This work was supported in part by National Science Foundation of China under Project 60806040, by the Fundamental Research Funds for the Central Universities under Project ZYGX2009X006, by the Young Scholar Fund of Sichuan under Project 2011JQ0002, and by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The review of this brief was arranged by Editor S. Deleonibus.

 
dc.identifier.issn0018-9383
2012 Impact Factor: 2.062
2012 SCImago Journal Rankings: 1.261
 
dc.identifier.issue3
 
dc.identifier.scopuseid_2-s2.0-84857659318
 
dc.identifier.spage858
 
dc.identifier.urihttp://hdl.handle.net/10722/146405
 
dc.identifier.volume59
 
dc.languageeng
 
dc.publisherIEEE.
 
dc.publisher.placeUnited States
 
dc.relation.ispartofIEEE Transactions on Electron Devices
 
dc.relation.referencesReferences in Scopus
 
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectMemory
 
dc.subjectNiO
 
dc.subjectSwitching
 
dc.subjectWORM
 
dc.subjectConductive filaments
 
dc.titleFlexible write-once-read-many-times memory device based on a nickel oxide thin film
 
dc.typeArticle
 
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<contributor.author>Yu, YF</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University