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Article: Flexible write-once-read-many-times memory device based on a nickel oxide thin film

TitleFlexible write-once-read-many-times memory device based on a nickel oxide thin film
Authors
Yu, QLiu, YChen, TPLiu, ZYu, YFLei, HWZhu, JFung, S
KeywordsMemory
NiO
Switching
WORM
Conductive filaments
Issue Date2012
PublisherIEEE.
Citation
IEEE Transactions on Electron Devices, 2012, v. 59 n. 3, p. 858-862 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2011.2179939
AbstractA write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 10 4. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/146405
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000300580600048
Funding AgencyGrant Number
National Science Foundation of China60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

Manuscript received July 11, 2011; revised October 27, 2011; accepted December 8, 2011. Date of publication January 4, 2012; date of current version February 23, 2012. This work was supported in part by National Science Foundation of China under Project 60806040, by the Fundamental Research Funds for the Central Universities under Project ZYGX2009X006, by the Young Scholar Fund of Sichuan under Project 2011JQ0002, and by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The review of this brief was arranged by Editor S. Deleonibus.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYu, Qen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorYu, YFen_HK
dc.contributor.authorLei, HWen_HK
dc.contributor.authorZhu, Jen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-04-24T07:52:10Z-
dc.date.available2012-04-24T07:52:10Z-
dc.date.issued2012en_HK
dc.identifier.citationIEEE Transactions on Electron Devices, 2012, v. 59 n. 3, p. 858-862en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/146405-
dc.description.abstractA write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 10 4. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. © 2011 IEEE.en_HK
dc.languageengen_US
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.subjectMemoryen_HK
dc.subjectNiOen_HK
dc.subjectSwitchingen_HK
dc.subjectWORMen_HK
dc.subjectConductive filaments-
dc.titleFlexible write-once-read-many-times memory device based on a nickel oxide thin filmen_HK
dc.typeArticleen_HK
dc.identifier.emailLiu, Y: yliu2008@e.ntu.edu.sgen_HK
dc.identifier.emailChen, TP: echentp@ntu.edu.sg-
dc.identifier.emailFung, S: sfung@hku.hk-
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2011.2179939en_HK
dc.identifier.scopuseid_2-s2.0-84857659318en_HK
dc.identifier.hkuros199172en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84857659318&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume59en_HK
dc.identifier.issue3en_HK
dc.identifier.spage858en_HK
dc.identifier.epage862en_HK
dc.identifier.isiWOS:000300580600048-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhu, J=35188435800en_HK
dc.identifier.scopusauthoridLei, HW=53164077700en_HK
dc.identifier.scopusauthoridYu, YF=8723751600en_HK
dc.identifier.scopusauthoridLiu, Z=54884246500en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=54884311300en_HK
dc.identifier.scopusauthoridYu, Q=7402947741en_HK
dc.identifier.issnl0018-9383-

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