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Article: Influence of exchange bias coupling on the single-crystalline FeMn ultrathin film

TitleInfluence of exchange bias coupling on the single-crystalline FeMn ultrathin film
Authors
KeywordsAntiferromagnetic materials
Crystalline materials
Iron compounds
Light polarization
Magnetic storage
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 12, article no. 122504 How to Cite?
AbstractPolarization dependent x-ray photoemission electron microscopy was used to investigate the influence of the exchange bias coupling on the disordered ultrathin single-crystalline fcc Fe50 Mn50. We find that the critical thickness of the FeMn film, where the antiferromagnetic (AF) order is formed, varies with changing the magnetization direction of the ferromagnetic (FM) layer from out-of-plane to in-plane. Surface magneto-optical Kerr effect measurements (SMOKE) further manifest the shift of the critical thickness with alternating the exchange bias coupling. It indicates that the spin structure of the FeMn layer near the FM layer is modified by the presence of exchange bias coupling and the properties of the coupling. Our results provide direct experimental evidence that the AF spin structure at the interface between the FM and AF layers is strongly influenced by the exchange bias coupling. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/146334
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, J-
dc.contributor.authorKuch, W-
dc.contributor.authorChelaru, LI-
dc.contributor.authorOffi, F-
dc.contributor.authorKotsugi, M-
dc.date.accessioned2012-04-19T06:30:16Z-
dc.date.available2012-04-19T06:30:16Z-
dc.date.issued2005-
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 12, article no. 122504-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/146334-
dc.description.abstractPolarization dependent x-ray photoemission electron microscopy was used to investigate the influence of the exchange bias coupling on the disordered ultrathin single-crystalline fcc Fe50 Mn50. We find that the critical thickness of the FeMn film, where the antiferromagnetic (AF) order is formed, varies with changing the magnetization direction of the ferromagnetic (FM) layer from out-of-plane to in-plane. Surface magneto-optical Kerr effect measurements (SMOKE) further manifest the shift of the critical thickness with alternating the exchange bias coupling. It indicates that the spin structure of the FeMn layer near the FM layer is modified by the presence of exchange bias coupling and the properties of the coupling. Our results provide direct experimental evidence that the AF spin structure at the interface between the FM and AF layers is strongly influenced by the exchange bias coupling. © 2005 American Institute of Physics.-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsCopyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2005, v. 86 n. 12, article no. 122504) and may be found at (http://apl.aip.org/resource/1/applab/v86/i12/p122504_s1).-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAntiferromagnetic materials-
dc.subjectCrystalline materials-
dc.subjectIron compounds-
dc.subjectLight polarization-
dc.subjectMagnetic storage-
dc.titleInfluence of exchange bias coupling on the single-crystalline FeMn ultrathin filmen_US
dc.typeArticleen_US
dc.identifier.emailWang, J: jianwang@hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.1883318-
dc.identifier.scopuseid_2-s2.0-17944368491-
dc.identifier.hkuros121668-
dc.identifier.volume86-
dc.identifier.issue12, article no. 122504-
dc.identifier.isiWOS:000228050900052-
dc.publisher.placeUnited States-

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