Article: On the T2 trap in zinc oxide thin films

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TitleOn the T2 trap in zinc oxide thin films
AuthorsSchmidt, M2 3
Ellguth, M2
Karsthof, R2
v Wenckstern, H2
Pickenhain, R2
Grundmann, M2
Brauer, G3
Ling, FCC1
KeywordsCapacitance-voltage spectra
Deep levels
DLTS
ZnO
Issue Date2012
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
CitationPhysica Status Solidi (B) Basic Research, 2012, v. 249 n. 3, p. 588-595 [How to Cite?]
DOI: http://dx.doi.org/10.1002/pssb.201147271
AbstractWe investigated the electronic properties of the T2 deep-level in zinc oxide thin films. It was found that T2 preferentially forms under zinc-rich conditions and can be generated by either annealing the samples at reduced oxygen partial pressures (PO 2 < bar) or implanting zinc or copper ions, respectively. A strong dependence of its activation energy and high temperature limit of its cross-section for electron capture on the T2 concentration in the sample is reported. Double DLTS measurements showed that the T2 activation energy decreases with increasing electric field due to phonon assisted tunnelling. Furthermore T2 can be photo-ionised with a threshold photon energy of about 700meV. Depth-resolved concentration profiles of the T2 level in the samples were measured by optical capacitance-voltage spectroscopy. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
ISSN0370-1972
2011 Impact Factor: 1.316
2011 SCImago Journal Rankings: 0.187
DOIhttp://dx.doi.org/10.1002/pssb.201147271
ISI Accession Number IDWOS:000300696500029
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorSchmidt, M
dc.contributor.authorEllguth, M
dc.contributor.authorKarsthof, R
dc.contributor.authorv Wenckstern, H
dc.contributor.authorPickenhain, R
dc.contributor.authorGrundmann, M
dc.contributor.authorBrauer, G
dc.contributor.authorLing, FCC
dc.date.accessioned2012-03-27T09:02:07Z
dc.date.available2012-03-27T09:02:07Z
dc.date.issued2012
dc.description.abstractWe investigated the electronic properties of the T2 deep-level in zinc oxide thin films. It was found that T2 preferentially forms under zinc-rich conditions and can be generated by either annealing the samples at reduced oxygen partial pressures (PO 2 < bar) or implanting zinc or copper ions, respectively. A strong dependence of its activation energy and high temperature limit of its cross-section for electron capture on the T2 concentration in the sample is reported. Double DLTS measurements showed that the T2 activation energy decreases with increasing electric field due to phonon assisted tunnelling. Furthermore T2 can be photo-ionised with a threshold photon energy of about 700meV. Depth-resolved concentration profiles of the T2 level in the samples were measured by optical capacitance-voltage spectroscopy. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationPhysica Status Solidi (B) Basic Research, 2012, v. 249 n. 3, p. 588-595 [How to Cite?]
DOI: http://dx.doi.org/10.1002/pssb.201147271
dc.identifier.doihttp://dx.doi.org/10.1002/pssb.201147271
dc.identifier.epage595
dc.identifier.hkuros198903
dc.identifier.isiWOS:000300696500029
dc.identifier.issn0370-1972
2011 Impact Factor: 1.316
2011 SCImago Journal Rankings: 0.187
dc.identifier.issue3
dc.identifier.scopuseid_2-s2.0-84857407284
dc.identifier.spage588
dc.identifier.urihttp://hdl.handle.net/10722/145920
dc.identifier.volume249
dc.languageeng
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
dc.publisher.placeGermany
dc.relation.ispartofPhysica Status Solidi (B) Basic Research
dc.relation.referencesReferences in Scopus
dc.subjectCapacitance-voltage spectra
dc.subjectDeep levels
dc.subjectDLTS
dc.subjectZnO
dc.titleOn the T2 trap in zinc oxide thin films
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Universität Leipzig
  3. Forschungszentrum Dresden Rossendorf