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Article: On the T2 trap in zinc oxide thin films

TitleOn the T2 trap in zinc oxide thin films
Authors
Schmidt, MEllguth, MKarsthof, Rv Wenckstern, HPickenhain, RGrundmann, MBrauer, GLing, FCC
KeywordsCapacitance-voltage spectra
Deep levels
DLTS
ZnO
Issue Date2012
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (B) Basic Research, 2012, v. 249 n. 3, p. 588-595 How to Cite?
DOI: http://dx.doi.org/10.1002/pssb.201147271
AbstractWe investigated the electronic properties of the T2 deep-level in zinc oxide thin films. It was found that T2 preferentially forms under zinc-rich conditions and can be generated by either annealing the samples at reduced oxygen partial pressures (PO 2 < bar) or implanting zinc or copper ions, respectively. A strong dependence of its activation energy and high temperature limit of its cross-section for electron capture on the T2 concentration in the sample is reported. Double DLTS measurements showed that the T2 activation energy decreases with increasing electric field due to phonon assisted tunnelling. Furthermore T2 can be photo-ionised with a threshold photon energy of about 700meV. Depth-resolved concentration profiles of the T2 level in the samples were measured by optical capacitance-voltage spectroscopy. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/145920
ISSN
0370-1972
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.388
ISI Accession Number ID
WOS:000300696500029
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorSchmidt, Men_HK
dc.contributor.authorEllguth, Men_HK
dc.contributor.authorKarsthof, Ren_HK
dc.contributor.authorv Wenckstern, Hen_HK
dc.contributor.authorPickenhain, Ren_HK
dc.contributor.authorGrundmann, Men_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorLing, FCCen_HK
dc.date.accessioned2012-03-27T09:02:07Z-
dc.date.available2012-03-27T09:02:07Z-
dc.date.issued2012en_HK
dc.identifier.citationPhysica Status Solidi (B) Basic Research, 2012, v. 249 n. 3, p. 588-595en_HK
dc.identifier.issn0370-1972en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145920-
dc.description.abstractWe investigated the electronic properties of the T2 deep-level in zinc oxide thin films. It was found that T2 preferentially forms under zinc-rich conditions and can be generated by either annealing the samples at reduced oxygen partial pressures (PO 2 < bar) or implanting zinc or copper ions, respectively. A strong dependence of its activation energy and high temperature limit of its cross-section for electron capture on the T2 concentration in the sample is reported. Double DLTS measurements showed that the T2 activation energy decreases with increasing electric field due to phonon assisted tunnelling. Furthermore T2 can be photo-ionised with a threshold photon energy of about 700meV. Depth-resolved concentration profiles of the T2 level in the samples were measured by optical capacitance-voltage spectroscopy. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_HK
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_HK
dc.relation.ispartofPhysica Status Solidi (B) Basic Researchen_HK
dc.subjectCapacitance-voltage spectraen_HK
dc.subjectDeep levelsen_HK
dc.subjectDLTSen_HK
dc.subjectZnOen_HK
dc.titleOn the T2 trap in zinc oxide thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, FCC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssb.201147271en_HK
dc.identifier.scopuseid_2-s2.0-84857407284en_HK
dc.identifier.hkuros198903en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84857407284&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume249en_HK
dc.identifier.issue3en_HK
dc.identifier.spage588en_HK
dc.identifier.epage595en_HK
dc.identifier.isiWOS:000300696500029-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridSchmidt, M=7404397548en_HK
dc.identifier.scopusauthoridEllguth, M=35106898900en_HK
dc.identifier.scopusauthoridKarsthof, R=55022876400en_HK
dc.identifier.scopusauthoridv Wenckstern, H=55022523100en_HK
dc.identifier.scopusauthoridPickenhain, R=6701673459en_HK
dc.identifier.scopusauthoridGrundmann, M=7005228016en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridLing, FCC=13310239300en_HK
dc.identifier.issnl0370-1972-

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