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Article: On the T2 trap in zinc oxide thin films
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TitleOn the T2 trap in zinc oxide thin films
 
AuthorsSchmidt, M2 3
Ellguth, M2
Karsthof, R2
v Wenckstern, H2
Pickenhain, R2
Grundmann, M2
Brauer, G3
Ling, FCC1
 
KeywordsCapacitance-voltage spectra
Deep levels
DLTS
ZnO
 
Issue Date2012
 
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
 
CitationPhysica Status Solidi (B) Basic Research, 2012, v. 249 n. 3, p. 588-595 [How to Cite?]
DOI: http://dx.doi.org/10.1002/pssb.201147271
 
AbstractWe investigated the electronic properties of the T2 deep-level in zinc oxide thin films. It was found that T2 preferentially forms under zinc-rich conditions and can be generated by either annealing the samples at reduced oxygen partial pressures (PO 2 < bar) or implanting zinc or copper ions, respectively. A strong dependence of its activation energy and high temperature limit of its cross-section for electron capture on the T2 concentration in the sample is reported. Double DLTS measurements showed that the T2 activation energy decreases with increasing electric field due to phonon assisted tunnelling. Furthermore T2 can be photo-ionised with a threshold photon energy of about 700meV. Depth-resolved concentration profiles of the T2 level in the samples were measured by optical capacitance-voltage spectroscopy. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
 
ISSN0370-1972
2013 Impact Factor: 1.605
 
DOIhttp://dx.doi.org/10.1002/pssb.201147271
 
ISI Accession Number IDWOS:000300696500029
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorSchmidt, M
 
dc.contributor.authorEllguth, M
 
dc.contributor.authorKarsthof, R
 
dc.contributor.authorv Wenckstern, H
 
dc.contributor.authorPickenhain, R
 
dc.contributor.authorGrundmann, M
 
dc.contributor.authorBrauer, G
 
dc.contributor.authorLing, FCC
 
dc.date.accessioned2012-03-27T09:02:07Z
 
dc.date.available2012-03-27T09:02:07Z
 
dc.date.issued2012
 
dc.description.abstractWe investigated the electronic properties of the T2 deep-level in zinc oxide thin films. It was found that T2 preferentially forms under zinc-rich conditions and can be generated by either annealing the samples at reduced oxygen partial pressures (PO 2 < bar) or implanting zinc or copper ions, respectively. A strong dependence of its activation energy and high temperature limit of its cross-section for electron capture on the T2 concentration in the sample is reported. Double DLTS measurements showed that the T2 activation energy decreases with increasing electric field due to phonon assisted tunnelling. Furthermore T2 can be photo-ionised with a threshold photon energy of about 700meV. Depth-resolved concentration profiles of the T2 level in the samples were measured by optical capacitance-voltage spectroscopy. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationPhysica Status Solidi (B) Basic Research, 2012, v. 249 n. 3, p. 588-595 [How to Cite?]
DOI: http://dx.doi.org/10.1002/pssb.201147271
 
dc.identifier.doihttp://dx.doi.org/10.1002/pssb.201147271
 
dc.identifier.epage595
 
dc.identifier.hkuros198903
 
dc.identifier.isiWOS:000300696500029
 
dc.identifier.issn0370-1972
2013 Impact Factor: 1.605
 
dc.identifier.issue3
 
dc.identifier.scopuseid_2-s2.0-84857407284
 
dc.identifier.spage588
 
dc.identifier.urihttp://hdl.handle.net/10722/145920
 
dc.identifier.volume249
 
dc.languageeng
 
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
 
dc.publisher.placeGermany
 
dc.relation.ispartofPhysica Status Solidi (B) Basic Research
 
dc.relation.referencesReferences in Scopus
 
dc.subjectCapacitance-voltage spectra
 
dc.subjectDeep levels
 
dc.subjectDLTS
 
dc.subjectZnO
 
dc.titleOn the T2 trap in zinc oxide thin films
 
dc.typeArticle
 
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<contributor.author>Ellguth, M</contributor.author>
<contributor.author>Karsthof, R</contributor.author>
<contributor.author>v Wenckstern, H</contributor.author>
<contributor.author>Pickenhain, R</contributor.author>
<contributor.author>Grundmann, M</contributor.author>
<contributor.author>Brauer, G</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. Universität Leipzig
  3. Forschungszentrum Dresden Rossendorf