Article: Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition
| Title | Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Fung, MK1 Wong, KK1 Chen, XY1 Chan, YF1 Ng, AMC1 2 Djurišić, AB1 Chan, WK1 | ||||||
| Keywords | ITO Metal oxide Nanowires | ||||||
| Issue Date | 2012 | ||||||
| Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cap | ||||||
| Citation | Current Applied Physics, 2012, v. 12 n. 3, p. 697-706 [How to Cite?] DOI: http://dx.doi.org/10.1016/j.cap.2011.10.006 | ||||||
| Abstract | Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiO x nanowires, a mixture of SiO x and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures. © 2011 Elsevier B.V. All rights reserved. | ||||||
| ISSN | 1567-1739 2011 Impact Factor: 1.9 2011 SCImago Journal Rankings: 0.132 | ||||||
| DOI | http://dx.doi.org/10.1016/j.cap.2011.10.006 | ||||||
| ISI Accession Number ID | WOS:000300715000017
Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and RGC GRF grant HKU 701910 are acknowledged. | ||||||
| References | References in Scopus |
| dc.contributor.author | Fung, MK | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Wong, KK | ||||||
| dc.contributor.author | Chen, XY | ||||||
| dc.contributor.author | Chan, YF | ||||||
| dc.contributor.author | Ng, AMC | ||||||
| dc.contributor.author | Djurišić, AB | ||||||
| dc.contributor.author | Chan, WK | ||||||
| dc.date.accessioned | 2012-03-27T08:56:05Z | ||||||
| dc.date.available | 2012-03-27T08:56:05Z | ||||||
| dc.date.issued | 2012 | ||||||
| dc.description.abstract | Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiO x nanowires, a mixture of SiO x and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures. © 2011 Elsevier B.V. All rights reserved. | ||||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||||
| dc.identifier.citation | Current Applied Physics, 2012, v. 12 n. 3, p. 697-706 [How to Cite?] DOI: http://dx.doi.org/10.1016/j.cap.2011.10.006 | ||||||
| dc.identifier.citeulike | 9946840 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1016/j.cap.2011.10.006 | ||||||
| dc.identifier.epage | 706 | ||||||
| dc.identifier.hkuros | 203600 | ||||||
| dc.identifier.isi | WOS:000300715000017
Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and RGC GRF grant HKU 701910 are acknowledged. | ||||||
| dc.identifier.issn | 1567-1739 2011 Impact Factor: 1.9 2011 SCImago Journal Rankings: 0.132 | ||||||
| dc.identifier.issue | 3 | ||||||
| dc.identifier.scopus | eid_2-s2.0-84857452621 | ||||||
| dc.identifier.spage | 697 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/145872 | ||||||
| dc.identifier.volume | 12 | ||||||
| dc.language | eng | ||||||
| dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cap | ||||||
| dc.publisher.place | Netherlands | ||||||
| dc.relation.ispartof | Current Applied Physics | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.subject | ITO | ||||||
| dc.subject | Metal oxide | ||||||
| dc.subject | Nanowires | ||||||
| dc.title | Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- University of Science and Technology of China