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Postgraduate Thesis: Photoluminescence study of ZnO materials
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TitlePhotoluminescence study of ZnO materials
 
AuthorsXiao, Bin
肖斌
 
Issue Date2011
 
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
Abstract Zinc oxide (ZnO) is a wide band gap (3.4eV at 300K) II-VI semiconductor with an exciton binding energy up to 60meV and is promising in the realization of excitonic or polaritonic lasing effect. Photoluminescence is widely used in studying the band gap and defect levels of ZnO. However, understanding in defects of ZnO is still far from satisfaction and remains controversial. Different authors suggest different explanations and mechanisms.  In the present study we investigate in the photoluminescence spectra of four kinds of ZnO single crystal, namely as-grown (not implanted) Zn-face polished, Zn-implanted, O-implanted and He-implanted. The samples are annealed both in air and argon gas at a temperature of 350, 650, 750, 900 and 1200oC. The results show that O-implanted sample is weaker in excitonic emission and has an annealing effect tendency not consistent with that of Zn-implanted and He-implanted. Ion implantation would introduce defects in favor of yellow luminescence and the defects would anneal out gradually as the annealing temperature is rising.
 
AdvisorsFung, SHY
Ling, FCC
 
DegreeMaster of Philosophy
 
SubjectZinc oxide - Optical properties.
Photoluminescence.
 
Dept/ProgramPhysics
 
DOIhttp://dx.doi.org/10.5353/th_b4715359
 
DC FieldValue
dc.contributor.advisorFung, SHY
 
dc.contributor.advisorLing, FCC
 
dc.contributor.authorXiao, Bin
 
dc.contributor.author肖斌
 
dc.date.hkucongregation2012
 
dc.date.issued2011
 
dc.description.abstract Zinc oxide (ZnO) is a wide band gap (3.4eV at 300K) II-VI semiconductor with an exciton binding energy up to 60meV and is promising in the realization of excitonic or polaritonic lasing effect. Photoluminescence is widely used in studying the band gap and defect levels of ZnO. However, understanding in defects of ZnO is still far from satisfaction and remains controversial. Different authors suggest different explanations and mechanisms.  In the present study we investigate in the photoluminescence spectra of four kinds of ZnO single crystal, namely as-grown (not implanted) Zn-face polished, Zn-implanted, O-implanted and He-implanted. The samples are annealed both in air and argon gas at a temperature of 350, 650, 750, 900 and 1200oC. The results show that O-implanted sample is weaker in excitonic emission and has an annealing effect tendency not consistent with that of Zn-implanted and He-implanted. Ion implantation would introduce defects in favor of yellow luminescence and the defects would anneal out gradually as the annealing temperature is rising.
 
dc.description.naturepublished_or_final_version
 
dc.description.thesisdisciplinePhysics
 
dc.description.thesislevelmaster's
 
dc.description.thesisnameMaster of Philosophy
 
dc.identifier.doihttp://dx.doi.org/10.5353/th_b4715359
 
dc.identifier.hkulb4715359
 
dc.languageeng
 
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
dc.relation.ispartofHKU Theses Online (HKUTO)
 
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.source.urihttp://hub.hku.hk/bib/B47153593
 
dc.subject.lcshZinc oxide - Optical properties.
 
dc.subject.lcshPhotoluminescence.
 
dc.titlePhotoluminescence study of ZnO materials
 
dc.typePG_Thesis
 
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<description.abstract>&#65279;&#12288;Zinc oxide (ZnO) is a wide band gap (3.4eV at 300K) II-VI semiconductor with an exciton binding energy up to 60meV and is promising in the realization of excitonic or polaritonic lasing effect. Photoluminescence is widely used in studying the band gap and defect levels of ZnO. However, understanding in defects of ZnO is still far from satisfaction and remains controversial. Different authors suggest different explanations and mechanisms.

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