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Article: The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates

TitleThe optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates
Authors
KeywordsA. A-ZnO
A. C-P-MBE
A. ZnMgO
Issue Date2012
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 2012, v. 152 n. 4, p. 311-313 How to Cite?
AbstractThe ZnOZn 0.85Mg 0.15O multiple quantum wells (MQWs) were fabricated on Si(111) substrates by plasma-assisted molecular beam epitaxy (P-MBE) using ZnMgO as buffer layers. The RHEED images indicated that the MQWs were of high quality. The free exciton (FE) emission line originated from the well region and its phonon replicas (FE-1LO, FE-2LO and FE-3LO) were observed in the 86 K photoluminescence (PL) spectrum. Blueshift of the FE line in the MQW sample as compared to that in the ZnO bulk was found at temperatures as high as room temperature. Time-resolved PL study on the FE line showed a fast lifetime of 140 ps. The high quality of the MQW structure was revealed by the observation of the quantum-confinement-induced blueshift and shortened lifetime of the FE emission. © 2011 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/145580
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776
ISI Accession Number ID
Funding AgencyGrant Number
GRF
RGC
HKSAR7031/08P
UDF
University of Hong Kong
Natural Science Foundation of China60976036
Natural Science Foundation of Guangdong Province8151806001000009
Guangdong Province Nature Science FoundationS2011010001758
Scientific and Technological Plan of Guangdong Province and Guangzhou City2011B010400022
11C52090779
Funding Information:

This work was supported by the GRF, RGC, HKSAR (project no.: 7031/08P); the UDF, University of Hong Kong; the Natural Science Foundation of China (Grant No. 60976036); and the Natural Science Foundation of Guangdong Province (Grant No. 8151806001000009), Guangdong Province Nature Science Foundation (No. S2011010001758), and the Scientific and Technological Plan of Guangdong Province and Guangzhou City, (Nos. 2011B010400022 and 11C52090779).

References

 

DC FieldValueLanguage
dc.contributor.authorSu, SCen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorLu, YMen_HK
dc.contributor.authorMei, Ten_HK
dc.contributor.authorZhao, LZen_HK
dc.contributor.authorNiu, Ben_HK
dc.date.accessioned2012-02-28T01:55:41Z-
dc.date.available2012-02-28T01:55:41Z-
dc.date.issued2012en_HK
dc.identifier.citationSolid State Communications, 2012, v. 152 n. 4, p. 311-313en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145580-
dc.description.abstractThe ZnOZn 0.85Mg 0.15O multiple quantum wells (MQWs) were fabricated on Si(111) substrates by plasma-assisted molecular beam epitaxy (P-MBE) using ZnMgO as buffer layers. The RHEED images indicated that the MQWs were of high quality. The free exciton (FE) emission line originated from the well region and its phonon replicas (FE-1LO, FE-2LO and FE-3LO) were observed in the 86 K photoluminescence (PL) spectrum. Blueshift of the FE line in the MQW sample as compared to that in the ZnO bulk was found at temperatures as high as room temperature. Time-resolved PL study on the FE line showed a fast lifetime of 140 ps. The high quality of the MQW structure was revealed by the observation of the quantum-confinement-induced blueshift and shortened lifetime of the FE emission. © 2011 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.subjectA. A-ZnOen_HK
dc.subjectA. C-P-MBEen_HK
dc.subjectA. ZnMgOen_HK
dc.titleThe optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substratesen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.ssc.2011.11.022en_HK
dc.identifier.scopuseid_2-s2.0-84855903983en_HK
dc.identifier.hkuros198749en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84855903983&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume152en_HK
dc.identifier.issue4en_HK
dc.identifier.spage311en_HK
dc.identifier.epage313en_HK
dc.identifier.isiWOS:000300593100018-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridSu, SC=24438412700en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridLu, YM=36071877300en_HK
dc.identifier.scopusauthoridMei, T=8259931100en_HK
dc.identifier.scopusauthoridZhao, LZ=16302830500en_HK
dc.identifier.scopusauthoridNiu, B=54416083000en_HK
dc.identifier.citeulike10089956-

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