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Article: Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
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TitleResidual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
 
AuthorsZheng, CC1
Xu, SJ1
Ning, JQ1
Bao, W1
Wang, JF1
Gao, J1
Liu, JM2
Zhu, JH1 2
Liu, XL2
 
KeywordsCompressive strain
Epilayers grown
Low temperature photoluminescence
Peak position
R-sapphire
 
Issue Date2012
 
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
 
CitationSemiconductor Science and Technology, 2012, v. 27 n. 3, article no. 035008 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0268-1242/27/3/035008
 
AbstractZnO epilayers with a thickness of ∼360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 °C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled. © 2012 IOP Publishing Ltd.
 
ISSN0268-1242
2013 Impact Factor: 2.206
 
DOIhttp://dx.doi.org/10.1088/0268-1242/27/3/035008
 
ISI Accession Number IDWOS:000300624000010
Funding AgencyGrant Number
NSFC61028012
HK-RGC-GRFHKU705606P
Funding Information:

This work was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (grant no 61028012) and HK-RGC-GRF Grants (grant no HKU705606P).

 
DC FieldValue
dc.contributor.authorZheng, CC
 
dc.contributor.authorXu, SJ
 
dc.contributor.authorNing, JQ
 
dc.contributor.authorBao, W
 
dc.contributor.authorWang, JF
 
dc.contributor.authorGao, J
 
dc.contributor.authorLiu, JM
 
dc.contributor.authorZhu, JH
 
dc.contributor.authorLiu, XL
 
dc.date.accessioned2012-02-28T01:55:41Z
 
dc.date.available2012-02-28T01:55:41Z
 
dc.date.issued2012
 
dc.description.abstractZnO epilayers with a thickness of ∼360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 °C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled. © 2012 IOP Publishing Ltd.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationSemiconductor Science and Technology, 2012, v. 27 n. 3, article no. 035008 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0268-1242/27/3/035008
 
dc.identifier.doihttp://dx.doi.org/10.1088/0268-1242/27/3/035008
 
dc.identifier.hkuros198708
 
dc.identifier.isiWOS:000300624000010
Funding AgencyGrant Number
NSFC61028012
HK-RGC-GRFHKU705606P
Funding Information:

This work was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (grant no 61028012) and HK-RGC-GRF Grants (grant no HKU705606P).

 
dc.identifier.issn0268-1242
2013 Impact Factor: 2.206
 
dc.identifier.issue3, article no. 035008
 
dc.identifier.scopuseid_2-s2.0-84863141790
 
dc.identifier.urihttp://hdl.handle.net/10722/145579
 
dc.identifier.volume27
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofSemiconductor Science and Technology
 
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.
 
dc.subjectCompressive strain
 
dc.subjectEpilayers grown
 
dc.subjectLow temperature photoluminescence
 
dc.subjectPeak position
 
dc.subjectR-sapphire
 
dc.titleResidual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
 
dc.typeArticle
 
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<item><contributor.author>Zheng, CC</contributor.author>
<contributor.author>Xu, SJ</contributor.author>
<contributor.author>Ning, JQ</contributor.author>
<contributor.author>Bao, W</contributor.author>
<contributor.author>Wang, JF</contributor.author>
<contributor.author>Gao, J</contributor.author>
<contributor.author>Liu, JM</contributor.author>
<contributor.author>Zhu, JH</contributor.author>
<contributor.author>Liu, XL</contributor.author>
<date.accessioned>2012-02-28T01:55:41Z</date.accessioned>
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<description.abstract>ZnO epilayers with a thickness of &#8764;360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 &#176;C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled. &#169; 2012 IOP Publishing Ltd.</description.abstract>
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<subject>Compressive strain</subject>
<subject>Epilayers grown</subject>
<subject>Low temperature photoluminescence</subject>
<subject>Peak position</subject>
<subject>R-sapphire</subject>
<title>Residual strains and optical properties of  ZnO thin epilayers grown on r-sapphire planes</title>
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Author Affiliations
  1. The University of Hong Kong
  2. Institute of Semiconductors Chinese Academy of Sciences