Article: Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
| Title | Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Zheng, CC1 Xu, SJ1 Ning, JQ1 Bao, W1 Wang, JF1 Gao, J1 Liu, JM2 Zhu, JH1 2 Liu, XL2 | ||||||
| Keywords | Compressive strain Epilayers grown Low temperature photoluminescence Peak position R-sapphire | ||||||
| Issue Date | 2012 | ||||||
| Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | ||||||
| Citation | Semiconductor Science and Technology, 2012, v. 27 n. 3, article no. 035008 [How to Cite?] DOI: http://dx.doi.org/10.1088/0268-1242/27/3/035008 | ||||||
| Abstract | ZnO epilayers with a thickness of ∼360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 °C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled. © 2012 IOP Publishing Ltd. | ||||||
| ISSN | 0268-1242 2011 Impact Factor: 1.723 2011 SCImago Journal Rankings: 0.118 | ||||||
| DOI | http://dx.doi.org/10.1088/0268-1242/27/3/035008 | ||||||
| ISI Accession Number ID | WOS:000300624000010
Funding Information: This work was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (grant no 61028012) and HK-RGC-GRF Grants (grant no HKU705606P). |
| dc.contributor.author | Zheng, CC | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Xu, SJ | ||||||
| dc.contributor.author | Ning, JQ | ||||||
| dc.contributor.author | Bao, W | ||||||
| dc.contributor.author | Wang, JF | ||||||
| dc.contributor.author | Gao, J | ||||||
| dc.contributor.author | Liu, JM | ||||||
| dc.contributor.author | Zhu, JH | ||||||
| dc.contributor.author | Liu, XL | ||||||
| dc.date.accessioned | 2012-02-28T01:55:41Z | ||||||
| dc.date.available | 2012-02-28T01:55:41Z | ||||||
| dc.date.issued | 2012 | ||||||
| dc.description.abstract | ZnO epilayers with a thickness of ∼360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 °C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled. © 2012 IOP Publishing Ltd. | ||||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||||
| dc.identifier.citation | Semiconductor Science and Technology, 2012, v. 27 n. 3, article no. 035008 [How to Cite?] DOI: http://dx.doi.org/10.1088/0268-1242/27/3/035008 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1088/0268-1242/27/3/035008 | ||||||
| dc.identifier.hkuros | 198708 | ||||||
| dc.identifier.isi | WOS:000300624000010
Funding Information: This work was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (grant no 61028012) and HK-RGC-GRF Grants (grant no HKU705606P). | ||||||
| dc.identifier.issn | 0268-1242 2011 Impact Factor: 1.723 2011 SCImago Journal Rankings: 0.118 | ||||||
| dc.identifier.issue | 3, article no. 035008 | ||||||
| dc.identifier.scopus | eid_2-s2.0-84863141790 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/145579 | ||||||
| dc.identifier.volume | 27 | ||||||
| dc.language | eng | ||||||
| dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | ||||||
| dc.publisher.place | United Kingdom | ||||||
| dc.relation.ispartof | Semiconductor Science and Technology | ||||||
| dc.rights | Semiconductor Science and Technology. Copyright © Institute of Physics Publishing. | ||||||
| dc.subject | Compressive strain | ||||||
| dc.subject | Epilayers grown | ||||||
| dc.subject | Low temperature photoluminescence | ||||||
| dc.subject | Peak position | ||||||
| dc.subject | R-sapphire | ||||||
| dc.title | Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Chinese Academy of Sciences