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Article: Dephasing effect on transport of a graphene p-n junction in a quantum Hall regime

TitleDephasing effect on transport of a graphene p-n junction in a quantum Hall regime
Authors
Chen, JCZhang, HShen, SQSun, QF
Issue Date2011
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics Condensed Matter, 2011, v. 23 n. 49 How to Cite?
DOI: http://dx.doi.org/10.1088/0953-8984/23/49/495301
AbstractThe influence of the dephasing effect on the conductance distribution of disordered graphene p-n junctions is studied. Without the dephasing, the conductance distribution has a very wide range and the conductance fluctuation is large. In this case, the conductance plateaus cannot be obtained in a single sample with the fixed disorder configuration. However, by introducing the dephasing, we find that the distribution becomes narrow dramatically and the fluctuation is suppressed strongly, so that the conductance plateaus are obtained clearly for one single sample, which is consistent with experimental measurements. Furthermore, we also investigate the scaling feature of the conductance distribution and find that it has good scaling behavior in the strong dephasing case. © 2011 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/145577
ISSN
0953-8984
2021 Impact Factor: 2.745
2020 SCImago Journal Rankings: 0.908
ISI Accession Number ID
WOS:000298142200003
Funding AgencyGrant Number
NSF-China11074174
10974236
10821403
China-973 program
Research Grant Council of Hong KongHKU HKU 704809P
Funding Information:

This work was financially supported by NSF-China under grant nos. 11074174, 10974236 and 10821403, the China-973 program and the Research Grant Council of Hong Kong under grant no. HKU HKU 704809P.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, JCen_HK
dc.contributor.authorZhang, Hen_HK
dc.contributor.authorShen, SQen_HK
dc.contributor.authorSun, QFen_HK
dc.date.accessioned2012-02-28T01:55:40Z-
dc.date.available2012-02-28T01:55:40Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Physics Condensed Matter, 2011, v. 23 n. 49en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145577-
dc.description.abstractThe influence of the dephasing effect on the conductance distribution of disordered graphene p-n junctions is studied. Without the dephasing, the conductance distribution has a very wide range and the conductance fluctuation is large. In this case, the conductance plateaus cannot be obtained in a single sample with the fixed disorder configuration. However, by introducing the dephasing, we find that the distribution becomes narrow dramatically and the fluctuation is suppressed strongly, so that the conductance plateaus are obtained clearly for one single sample, which is consistent with experimental measurements. Furthermore, we also investigate the scaling feature of the conductance distribution and find that it has good scaling behavior in the strong dephasing case. © 2011 IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics Condensed Matteren_HK
dc.rightsJournal of Physics: Condensed Matter. Copyright © Institute of Physics Publishing.-
dc.subject.meshElectric Conductivity-
dc.subject.meshGraphite - chemistry-
dc.subject.meshQuantum Theory-
dc.titleDephasing effect on transport of a graphene p-n junction in a quantum Hall regimeen_HK
dc.typeArticleen_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0953-8984/23/49/495301en_HK
dc.identifier.pmid22089530-
dc.identifier.scopuseid_2-s2.0-82455178973en_HK
dc.identifier.hkuros198690en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-82455178973&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue49en_HK
dc.identifier.isiWOS:000298142200003-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, JC=35408794400en_HK
dc.identifier.scopusauthoridZhang, H=36077401700en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.scopusauthoridSun, QF=34572810700en_HK
dc.identifier.issnl0953-8984-

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