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Article: Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

TitlePost-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering
Authors
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 110 n. 11 How to Cite?
AbstractArsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 C. Post-growth annealing in air was carried out up to a temperature of 1000 C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 10 17cm -3 at the annealing temperature of 600 C. The origin of the p-type conductivity was consistent with the As Zn(V Zn) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn(V Zn) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/145575
ISSN
2014 Impact Factor: 2.183
2014 SCImago Journal Rankings: 0.912
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council HKSARHKU7031/08P
HKU7021/10P
University of Hong Kong
Funding Information:

This work was financially supported by the Research Grant Council HKSAR through the General Research Fund (GRF) (HKU7031/08P and HKU7021/10P) and The University of Hong Kong's University Development Fund (UDF) and Small Project Grant.

References

 

DC FieldValueLanguage
dc.contributor.authorTo, CKen_HK
dc.contributor.authorYang, Ben_HK
dc.contributor.authorSu, SCen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-02-28T01:55:38Z-
dc.date.available2012-02-28T01:55:38Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 11en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145575-
dc.description.abstractArsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 C. Post-growth annealing in air was carried out up to a temperature of 1000 C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 10 17cm -3 at the annealing temperature of 600 C. The origin of the p-type conductivity was consistent with the As Zn(V Zn) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn(V Zn) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 11, article no. 113521) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i11/p113521_s1).en_US
dc.titlePost-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputteringen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3665713en_HK
dc.identifier.scopuseid_2-s2.0-84858604130en_HK
dc.identifier.hkuros198651en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84858604130&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue11en_HK
dc.identifier.eissn1089-7550-
dc.identifier.isiWOS:000298254800042-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridTo, CK=35114056600en_HK
dc.identifier.scopusauthoridYang, B=55416326500en_HK
dc.identifier.scopusauthoridSu, SC=24438412700en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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