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Article: Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering
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TitlePost-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering
 
AuthorsTo, CK1
Yang, B1
Su, SC1
Ling, CC1
Beling, CD1
Fung, S1
 
Issue Date2011
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2011, v. 110 n. 11 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3665713
 
AbstractArsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 C. Post-growth annealing in air was carried out up to a temperature of 1000 C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 10 17cm -3 at the annealing temperature of 600 C. The origin of the p-type conductivity was consistent with the As Zn(V Zn) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn(V Zn) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence. © 2011 American Institute of Physics.
 
ISSN0021-8979
2013 Impact Factor: 2.185
 
DOIhttp://dx.doi.org/10.1063/1.3665713
 
ISI Accession Number IDWOS:000298254800042
Funding AgencyGrant Number
Research Grant Council HKSARHKU7031/08P
HKU7021/10P
University of Hong Kong
Funding Information:

This work was financially supported by the Research Grant Council HKSAR through the General Research Fund (GRF) (HKU7031/08P and HKU7021/10P) and The University of Hong Kong's University Development Fund (UDF) and Small Project Grant.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorTo, CK
 
dc.contributor.authorYang, B
 
dc.contributor.authorSu, SC
 
dc.contributor.authorLing, CC
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorFung, S
 
dc.date.accessioned2012-02-28T01:55:38Z
 
dc.date.available2012-02-28T01:55:38Z
 
dc.date.issued2011
 
dc.description.abstractArsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 C. Post-growth annealing in air was carried out up to a temperature of 1000 C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 10 17cm -3 at the annealing temperature of 600 C. The origin of the p-type conductivity was consistent with the As Zn(V Zn) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn(V Zn) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence. © 2011 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 11 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3665713
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3665713
 
dc.identifier.eissn1089-7550
 
dc.identifier.hkuros198651
 
dc.identifier.isiWOS:000298254800042
Funding AgencyGrant Number
Research Grant Council HKSARHKU7031/08P
HKU7021/10P
University of Hong Kong
Funding Information:

This work was financially supported by the Research Grant Council HKSAR through the General Research Fund (GRF) (HKU7031/08P and HKU7021/10P) and The University of Hong Kong's University Development Fund (UDF) and Small Project Grant.

 
dc.identifier.issn0021-8979
2013 Impact Factor: 2.185
 
dc.identifier.issue11
 
dc.identifier.scopuseid_2-s2.0-84858604130
 
dc.identifier.urihttp://hdl.handle.net/10722/145575
 
dc.identifier.volume110
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 11, article no. 113521) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i11/p113521_s1).
 
dc.titlePost-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering
 
dc.typeArticle
 
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<contributor.author>Beling, CD</contributor.author>
<contributor.author>Fung, S</contributor.author>
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<description.abstract>Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 C. Post-growth annealing in air was carried out up to a temperature of 1000 C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 10 17cm -3 at the annealing temperature of 600 C. The origin of the p-type conductivity was consistent with the As Zn(V Zn) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn(V Zn) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence. &#169; 2011 American Institute of Physics.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong