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Article: Unusual transition from negative to positive magnetoresistance in n-n heterojunctions composed of La0.9Hf0.1MnO3 and Nb-doped SrTiO3

TitleUnusual transition from negative to positive magnetoresistance in n-n heterojunctions composed of La0.9Hf0.1MnO3 and Nb-doped SrTiO3
Authors
Wang, LWu, ZPGao, J
Issue Date2011
PublisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
Citation
Europhysics Letters, 2011, v. 95 n. 6, article no. 67003 How to Cite?
DOI: http://dx.doi.org/10.1209/0295-5075/95/67003
AbstractWe fabricated n-n heterojunctions by composing La 0.9Hf 0.1MnO 3 layers and Nb-doped SrTiO 3 crystals using pulsed-laser deposition. The formed heterojunctions demonstrated good rectifying behavior in a wide range of temperatures with or without magnetic field. It is notable that the magnetoresistance changed from negative to positive as temperature increased. The appearance of the positive magnetoresistance at higher temperatures might be understood by the occupation of minority spin carriers in the t 2g ↓ sub-band. These results might be of merits for potential application in manganite-based spintronic devices. © 2011 Europhysics Letters Association.
Persistent Identifierhttp://hdl.handle.net/10722/145570
ISSN
0295-5075
2023 Impact Factor: 1.8
2023 SCImago Journal Rankings: 0.498
ISI Accession Number ID
WOS:000294996600030
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7025/06P
University Research Committee of HKU
Funding Information:

This work has been supported by the Research Grant Council of Hong Kong (HKU 7025/06P) and the University Research Committee of HKU.

Grants
Opto-electric response in heteroepitaxial junctions composed of transition metal perovskites

 

DC FieldValueLanguage
dc.contributor.authorWang, Len_US
dc.contributor.authorWu, ZPen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2012-02-28T01:55:37Z-
dc.date.available2012-02-28T01:55:37Z-
dc.date.issued2011en_US
dc.identifier.citationEurophysics Letters, 2011, v. 95 n. 6, article no. 67003en_US
dc.identifier.issn0295-5075en_US
dc.identifier.urihttp://hdl.handle.net/10722/145570-
dc.description.abstractWe fabricated n-n heterojunctions by composing La 0.9Hf 0.1MnO 3 layers and Nb-doped SrTiO 3 crystals using pulsed-laser deposition. The formed heterojunctions demonstrated good rectifying behavior in a wide range of temperatures with or without magnetic field. It is notable that the magnetoresistance changed from negative to positive as temperature increased. The appearance of the positive magnetoresistance at higher temperatures might be understood by the occupation of minority spin carriers in the t 2g ↓ sub-band. These results might be of merits for potential application in manganite-based spintronic devices. © 2011 Europhysics Letters Association.-
dc.languageengen_US
dc.publisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075en_US
dc.relation.ispartofEurophysics Lettersen_US
dc.rightsEurophysics Letters. Copyright © Institute of Physics Publishing Ltd..en_US
dc.titleUnusual transition from negative to positive magnetoresistance in n-n heterojunctions composed of La0.9Hf0.1MnO3 and Nb-doped SrTiO3en_US
dc.typeArticleen_US
dc.identifier.emailWang, L: wanglin1@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1209/0295-5075/95/67003-
dc.identifier.scopuseid_2-s2.0-80052981534-
dc.identifier.hkuros198637en_US
dc.identifier.volume95en_US
dc.identifier.issue6, article no. 67003-
dc.identifier.isiWOS:000294996600030-
dc.publisher.placeUnited Kingdom-
dc.relation.projectOpto-electric response in heteroepitaxial junctions composed of transition metal perovskites-
dc.identifier.issnl0295-5075-

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