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Article: Formation dynamics of excitons and temporal behaviors of fano resonance due to the exciton-impurity-phonon configuration interaction in ZnO

TitleFormation dynamics of excitons and temporal behaviors of fano resonance due to the exciton-impurity-phonon configuration interaction in ZnO
Authors
Issue Date2012
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/jpca
Citation
Journal Of Physical Chemistry A, 2012, v. 116 n. 1, p. 381-385 How to Cite?
AbstractFormation dynamics of free and neutral donor bound excitons (FX and D 0X) in a high quality ZnO single crystal are studied by means of time-resolved photoluminescence (TRPL) at various temperatures. At low-temperatures, FX and D 0X formation times are determined to be ∼5 and ∼10 ps, respectively, by fitting the rise process with the Boltzmann sigmoidal function. Temporal information of FX- and D 0X-longitudinal optical (LO) phonon coupling is also acquired by measuring TRPL spectra of the first-order LO phonon-assisted FX and D 0X transitions. In particular, interesting time evolution of luminescence intensity in the Fano resonance region due to the configuration interaction of exciton-impurity-phonon is explored. © 2011 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/145553
ISSN
2015 Impact Factor: 2.883
2015 SCImago Journal Rankings: 1.231
ISI Accession Number ID
Funding AgencyGrant Number
NSFC61028012
HK RGC-GRFHKU 7056/06P
University Grants Committee of the Hong Kong Special Administrative Region, ChinaAoE/P-03/08
Funding Information:

The work was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (Grant No. 61028012) and the HK RGC-GRF Grant (Grant No. HKU 7056/06P), and partially supported by a grant from the University Grants Committee Areas of Excellence Scheme of the Hong Kong Special Administrative Region, China (Project No. [AoE/P-03/08]).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorZheng, CCen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorNing, JQen_HK
dc.contributor.authorChen, YNen_HK
dc.contributor.authorLi, BKen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2012-02-28T01:53:45Z-
dc.date.available2012-02-28T01:53:45Z-
dc.date.issued2012en_HK
dc.identifier.citationJournal Of Physical Chemistry A, 2012, v. 116 n. 1, p. 381-385en_HK
dc.identifier.issn1089-5639en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145553-
dc.description.abstractFormation dynamics of free and neutral donor bound excitons (FX and D 0X) in a high quality ZnO single crystal are studied by means of time-resolved photoluminescence (TRPL) at various temperatures. At low-temperatures, FX and D 0X formation times are determined to be ∼5 and ∼10 ps, respectively, by fitting the rise process with the Boltzmann sigmoidal function. Temporal information of FX- and D 0X-longitudinal optical (LO) phonon coupling is also acquired by measuring TRPL spectra of the first-order LO phonon-assisted FX and D 0X transitions. In particular, interesting time evolution of luminescence intensity in the Fano resonance region due to the configuration interaction of exciton-impurity-phonon is explored. © 2011 American Chemical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/jpcaen_HK
dc.relation.ispartofJournal of Physical Chemistry Aen_HK
dc.titleFormation dynamics of excitons and temporal behaviors of fano resonance due to the exciton-impurity-phonon configuration interaction in ZnOen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp209919nen_HK
dc.identifier.pmid22148249-
dc.identifier.scopuseid_2-s2.0-84862961637en_HK
dc.identifier.hkuros198702en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84862961637&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume116en_HK
dc.identifier.issue1en_HK
dc.identifier.spage381en_HK
dc.identifier.epage385en_HK
dc.identifier.eissn1520-5215-
dc.identifier.isiWOS:000298978000042-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures-
dc.relation.projectInstitute of Molecular Functional Materials-
dc.identifier.scopusauthoridZheng, CC=36926810900en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridChen, YN=54402568500en_HK
dc.identifier.scopusauthoridLi, BK=22941300200en_HK
dc.identifier.scopusauthoridWang, JN=35249505300en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK

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