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Article: Self-limited self-perfection by liquefaction for sub-20nm trench/line fabrication

TitleSelf-limited self-perfection by liquefaction for sub-20nm trench/line fabrication
Authors
KeywordsArticle
Controlled Study
Grating
Liquefaction
Nanofabrication
Priority Journal
Temperature
Issue Date2009
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2009, v. 20 n. 46 How to Cite?
AbstractWe proposed and demonstrated a new approach to pressed self-perfection by liquefaction (P-SPEL), where a layer of SiO2 is used as a stopper on one sidewall of gratings, to self-limit the final trench width in P-SPEL to a preset stopper layer thickness, allowing a precise control of the final trench width without the need to control any pressing parameters such as pressure, temperature and the gap between the pressing plate and the substrate. We achieved 20nm wide trenches from a 90nm original width, reducing the original trench by 450%. We also observed improvement in the trench width uniformity. Using the fabricated resist trenches as templates, 20nm metal lines were achieved by lift-off. © IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/145475
ISSN
2015 Impact Factor: 3.573
2015 SCImago Journal Rankings: 1.196
ISI Accession Number ID
Funding AgencyGrant Number
ONR
DARPA
NSF
Funding Information:

This work was supported in part by ONR, DARPA and NSF. We thank Dr Zengli Fu for preparing the polymers used in the experiments and Chao Wang for providing the RIE recipe for etching Si.

References

 

DC FieldValueLanguage
dc.contributor.authorLiang, Yen_HK
dc.contributor.authorMurphy, Pen_HK
dc.contributor.authorLi, WDen_HK
dc.contributor.authorChou, SYen_HK
dc.date.accessioned2012-02-23T12:10:54Z-
dc.date.available2012-02-23T12:10:54Z-
dc.date.issued2009en_HK
dc.identifier.citationNanotechnology, 2009, v. 20 n. 46en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145475-
dc.description.abstractWe proposed and demonstrated a new approach to pressed self-perfection by liquefaction (P-SPEL), where a layer of SiO2 is used as a stopper on one sidewall of gratings, to self-limit the final trench width in P-SPEL to a preset stopper layer thickness, allowing a precise control of the final trench width without the need to control any pressing parameters such as pressure, temperature and the gap between the pressing plate and the substrate. We achieved 20nm wide trenches from a 90nm original width, reducing the original trench by 450%. We also observed improvement in the trench width uniformity. Using the fabricated resist trenches as templates, 20nm metal lines were achieved by lift-off. © IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.subjectArticleen_US
dc.subjectControlled Studyen_US
dc.subjectGratingen_US
dc.subjectLiquefactionen_US
dc.subjectNanofabricationen_US
dc.subjectPriority Journalen_US
dc.subjectTemperatureen_US
dc.titleSelf-limited self-perfection by liquefaction for sub-20nm trench/line fabricationen_HK
dc.typeArticleen_HK
dc.identifier.emailLi, WD:liwd@hku.hken_HK
dc.identifier.authorityLi, WD=rp01581en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0957-4484/20/46/465305en_HK
dc.identifier.scopuseid_2-s2.0-70350647317en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70350647317&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue46en_HK
dc.identifier.eissn1361-6528-
dc.identifier.isiWOS:000271030200010-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLiang, Y=35181608700en_HK
dc.identifier.scopusauthoridMurphy, P=8208028700en_HK
dc.identifier.scopusauthoridLi, WD=35181575900en_HK
dc.identifier.scopusauthoridChou, SY=7401538612en_HK

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