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Article: Solar-blind deep-UV band-pass filter (250-350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithography

TitleSolar-blind deep-UV band-pass filter (250-350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithography
Authors
Issue Date2010
PublisherOptical Society of America. The Journal's web site is located at http://www.opticsexpress.org
Citation
Optics Express, 2010, v. 18 n. 2, p. 931-937 How to Cite?
AbstractWe designed, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance of a 27% transmission peak at 290 nm, a pass-band width of 100 nm (from 250 to 350 nm), and a 20dB rejection ratio between deep-UV wavelength and visible wavelength. The filter consists of an aluminum nano-grid, which was made by coating 20 nm Al on a SiO2 square grid with 190 nm pitch, 30 nm linewidth and 250 nm depth. The performances agree with a rigorous coupled wave analysis. The wavelength for the peak transmission and the pass-bandwidth can be tuned through adjusting the metal nano-grid dimensions. The filter was fabricated by nanoimprint lithography, hence is large area and low cost. Combining with Si photodetectors, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device or large-area complex integrated imaging array level. © 2010 Optical Society of America.
Persistent Identifierhttp://hdl.handle.net/10722/145474
ISSN
2015 Impact Factor: 3.148
2015 SCImago Journal Rankings: 2.186
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, WDen_HK
dc.contributor.authorChou, SYen_HK
dc.date.accessioned2012-02-23T12:10:53Z-
dc.date.available2012-02-23T12:10:53Z-
dc.date.issued2010en_HK
dc.identifier.citationOptics Express, 2010, v. 18 n. 2, p. 931-937en_HK
dc.identifier.issn1094-4087en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145474-
dc.description.abstractWe designed, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance of a 27% transmission peak at 290 nm, a pass-band width of 100 nm (from 250 to 350 nm), and a 20dB rejection ratio between deep-UV wavelength and visible wavelength. The filter consists of an aluminum nano-grid, which was made by coating 20 nm Al on a SiO2 square grid with 190 nm pitch, 30 nm linewidth and 250 nm depth. The performances agree with a rigorous coupled wave analysis. The wavelength for the peak transmission and the pass-bandwidth can be tuned through adjusting the metal nano-grid dimensions. The filter was fabricated by nanoimprint lithography, hence is large area and low cost. Combining with Si photodetectors, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device or large-area complex integrated imaging array level. © 2010 Optical Society of America.en_HK
dc.languageengen_US
dc.publisherOptical Society of America. The Journal's web site is located at http://www.opticsexpress.orgen_HK
dc.relation.ispartofOptics Expressen_HK
dc.subject.meshAluminum - chemistryen_HK
dc.subject.meshEquipment Designen_HK
dc.subject.meshEquipment Failure Analysisen_HK
dc.subject.meshFiltration - instrumentationen_HK
dc.subject.meshNanostructures - chemistry - ultrastructureen_HK
dc.subject.meshNanotechnology - instrumentationen_HK
dc.subject.meshOptical Devicesen_HK
dc.subject.meshPhotography - methodsen_HK
dc.subject.meshRefractometry - instrumentationen_HK
dc.subject.meshSilicon Dioxide - chemistryen_HK
dc.subject.meshSolar Energyen_HK
dc.subject.meshUltraviolet Raysen_HK
dc.titleSolar-blind deep-UV band-pass filter (250-350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithographyen_HK
dc.typeArticleen_HK
dc.identifier.emailLi, WD:liwd@hku.hken_HK
dc.identifier.authorityLi, WD=rp01581en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1364/OE.18.000931en_HK
dc.identifier.pmid20173915-
dc.identifier.scopuseid_2-s2.0-75249090178en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-75249090178&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume18en_HK
dc.identifier.issue2en_HK
dc.identifier.spage931en_HK
dc.identifier.epage937en_HK
dc.identifier.eissn1094-4087-
dc.identifier.isiWOS:000273860400057-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, WD=35181575900en_HK
dc.identifier.scopusauthoridChou, SY=7401538612en_HK

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