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Article: Indium tin oxide nanowires growth by dc sputtering

TitleIndium tin oxide nanowires growth by dc sputtering
Authors
Fung, MKSun, YCNg, AMCChen, XYWong, KKDjurišíc, ABChan, WK
KeywordsPhysics
Condensed Matter
Optical and Electronic Materials
Nanotechnology
Characterization and Evaluation Materials
Surfaces and Interfaces and Thin Films
Operating Procedures and Materials Treatment
Issue Date2011
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2011, v. 104 n. 4, p. 1075-1080 How to Cite?
DOI: http://dx.doi.org/10.1007/s00339-011-6372-6
AbstractIndium tin oxide nanowires have been grown by dc sputtering on different substrates without the use of catalysts or oblique deposition. The nanowire length was of the order of several μm, while their diameter was ∼50- 100 nm. Small side branches on the nanowires were frequently observed. The nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The growth mechanism of the nanowires is discussed. © Springer-Verlag 2011.
Persistent Identifierhttp://hdl.handle.net/10722/145089
ISSN
0947-8396
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.446
ISI Accession Number ID
WOS:000293972100011
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding Grant
RGC GRFHKU 701910
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and RGC GRF grant HKU 701910 are acknowledged.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorFung, MKen_HK
dc.contributor.authorSun, YCen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorChen, XYen_HK
dc.contributor.authorWong, KKen_HK
dc.contributor.authorDjurišíc, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2012-02-21T05:43:47Z-
dc.date.available2012-02-21T05:43:47Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2011, v. 104 n. 4, p. 1075-1080en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145089-
dc.description.abstractIndium tin oxide nanowires have been grown by dc sputtering on different substrates without the use of catalysts or oblique deposition. The nanowire length was of the order of several μm, while their diameter was ∼50- 100 nm. Small side branches on the nanowires were frequently observed. The nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The growth mechanism of the nanowires is discussed. © Springer-Verlag 2011.en_HK
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.rightsThe Author(s)en_US
dc.subjectPhysicsen_US
dc.subjectCondensed Matteren_US
dc.subjectOptical and Electronic Materialsen_US
dc.subjectNanotechnologyen_US
dc.subjectCharacterization and Evaluation Materialsen_US
dc.subjectSurfaces and Interfaces and Thin Filmsen_US
dc.subjectOperating Procedures and Materials Treatmenten_US
dc.titleIndium tin oxide nanowires growth by dc sputteringen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4551/resserv?sid=springerlink&genre=article&atitle=Indium tin oxide nanowires growth by dc sputtering&title=Applied Physics A: Materials Science & Processing&issn=09478396&date=2011-09-01&volume=104&issue=4& spage=1075&authors=M. K. Fung, Y. C. Sun, A. M. C. Ng, <i>et al.</i>en_US
dc.identifier.emailDjurišíc, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišíc, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1007/s00339-011-6372-6en_HK
dc.identifier.scopuseid_2-s2.0-80053898445en_HK
dc.identifier.hkuros205701-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80053898445&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume104en_HK
dc.identifier.issue4en_HK
dc.identifier.spage1075en_HK
dc.identifier.epage1080en_HK
dc.identifier.eissn1432-0630en_US
dc.identifier.isiWOS:000293972100011-
dc.publisher.placeGermanyen_HK
dc.description.otherSpringer Open Choice, 21 Feb 2012en_US
dc.identifier.scopusauthoridFung, MK=35191896100en_HK
dc.identifier.scopusauthoridSun, YC=36572487500en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridChen, XY=35182594600en_HK
dc.identifier.scopusauthoridWong, KK=37056419600en_HK
dc.identifier.scopusauthoridDjurišíc, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, WK=7403917961en_HK
dc.identifier.citeulike9111913-
dc.identifier.issnl0947-8396-

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