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Article: High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

TitleHigh-field linear magneto-resistance in topological insulator Bi2Se3 thin films
Authors
KeywordsGap opening
High magnetic fields
High-field
Negative magneto-resistance
Surface state
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 100 n. 3, article no. 032105 How to Cite?
Abstract
Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/144567
ISSN
2013 Impact Factor: 3.515
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of the HKSARHKU10/CRF/08
605011
706110P
UGC of the HKSARSEG_CUHK06
Funding Information:

We wish to acknowledge useful discussions with Dr. Haizhou Lu and Professor Shunqing Shen. This work was partially supported by the Research Grant Council of the HKSAR under Grant Nos. HKU10/CRF/08, 605011, and 706110P. The PPMS facilities used for magneto transport measurements are supported by the Special Equipment Grant (SEG_CUHK06) from the UGC of the HKSAR.

Grants

 

Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong University of Science and Technology
DC FieldValueLanguage
dc.contributor.authorHe, Hen_US
dc.contributor.authorLi, Ben_US
dc.contributor.authorLiu, Hen_US
dc.contributor.authorGuo, Xen_US
dc.contributor.authorWang, Zen_US
dc.contributor.authorXie, Men_US
dc.contributor.authorWang, J-
dc.date.accessioned2012-02-03T06:14:13Z-
dc.date.available2012-02-03T06:14:13Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 100 n. 3, article no. 032105en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/144567-
dc.description.abstractLinear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. © 2012 American Institute of Physics.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsAfter publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal).en_US
dc.subjectGap opening-
dc.subjectHigh magnetic fields-
dc.subjectHigh-field-
dc.subjectNegative magneto-resistance-
dc.subjectSurface state-
dc.titleHigh-field linear magneto-resistance in topological insulator Bi2Se3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.emailXie, M: mhxie@hku.hken_US
dc.identifier.emailWang, J: phjwang@ust.hk-
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3677669-
dc.identifier.scopuseid_2-s2.0-84863011657-
dc.identifier.hkuros198603en_US
dc.identifier.volume100en_US
dc.identifier.issue3, article no. 032105-
dc.identifier.isiWOS:000299386800027-
dc.publisher.placeUnited States-
dc.relation.projectNano-Spintronics - Quantum Control of Electron Spins in Semiconductors-

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