Article: High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
| Title | High-field linear magneto-resistance in topological insulator Bi2Se3 thin films |
|---|---|
| Authors | He, H2 Li, B2 Liu, H2 Guo, X1 Wang, Z1 Xie, M1 Wang, J2 |
| Keywords | Gap opening High magnetic fields High-field Negative magneto-resistance Surface state |
| Issue Date | 2012 |
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
| Citation | Applied Physics Letters, 2012, v. 100 n. 3, article no. 032105 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3677669 |
| Abstract | Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. © 2012 American Institute of Physics. |
| ISSN | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 |
| DOI | http://dx.doi.org/10.1063/1.3677669 |
| Grants | Nano-Spintronics - Quantum Control of Electron Spins in Semiconductors |
| dc.contributor.author | He, H | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Li, B | ||||||
| dc.contributor.author | Liu, H | ||||||
| dc.contributor.author | Guo, X | ||||||
| dc.contributor.author | Wang, Z | ||||||
| dc.contributor.author | Xie, M | ||||||
| dc.contributor.author | Wang, J | ||||||
| dc.date.accessioned | 2012-02-03T06:14:13Z | ||||||
| dc.date.available | 2012-02-03T06:14:13Z | ||||||
| dc.date.issued | 2012 | ||||||
| dc.description.abstract | Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. © 2012 American Institute of Physics. | ||||||
| dc.description.grant | Nano-Spintronics - Quantum Control of Electron Spins in Semiconductors | ||||||
| dc.description.grantcode | 99531 | ||||||
| dc.description.nature | published_or_final_version | ||||||
| dc.identifier.citation | Applied Physics Letters, 2012, v. 100 n. 3, article no. 032105 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3677669 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3677669 | ||||||
| dc.identifier.hkuros | 198603 | ||||||
| dc.identifier.isi | WOS:000299386800027
Funding Information: We wish to acknowledge useful discussions with Dr. Haizhou Lu and Professor Shunqing Shen. This work was partially supported by the Research Grant Council of the HKSAR under Grant Nos. HKU10/CRF/08, 605011, and 706110P. The PPMS facilities used for magneto transport measurements are supported by the Special Equipment Grant (SEG_CUHK06) from the UGC of the HKSAR. | ||||||
| dc.identifier.issn | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||
| dc.identifier.issue | 3, article no. 032105 | ||||||
| dc.identifier.scopus | eid_2-s2.0-84863011657 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/144567 | ||||||
| dc.identifier.volume | 100 | ||||||
| dc.language | eng | ||||||
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
| dc.publisher.place | United States | ||||||
| dc.relation.ispartof | Applied Physics Letters | ||||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||||
| dc.rights | After publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal). | ||||||
| dc.subject | Gap opening | ||||||
| dc.subject | High magnetic fields | ||||||
| dc.subject | High-field | ||||||
| dc.subject | Negative magneto-resistance | ||||||
| dc.subject | Surface state | ||||||
| dc.title | High-field linear magneto-resistance in topological insulator Bi2Se3 thin films | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Hong Kong University of Science and Technology