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Article: High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
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TitleHigh-field linear magneto-resistance in topological insulator Bi2Se3 thin films
 
AuthorsHe, H2
Li, B2
Liu, H2
Guo, X1
Wang, Z1
Xie, M1
Wang, J2
 
KeywordsGap opening
High magnetic fields
High-field
Negative magneto-resistance
Surface state
 
Issue Date2012
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2012, v. 100 n. 3, article no. 032105 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3677669
 
AbstractLinear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. © 2012 American Institute of Physics.
 
ISSN0003-6951
2013 Impact Factor: 3.515
 
DOIhttp://dx.doi.org/10.1063/1.3677669
 
ISI Accession Number IDWOS:000299386800027
Funding AgencyGrant Number
Research Grant Council of the HKSARHKU10/CRF/08
605011
706110P
UGC of the HKSARSEG_CUHK06
Funding Information:

We wish to acknowledge useful discussions with Dr. Haizhou Lu and Professor Shunqing Shen. This work was partially supported by the Research Grant Council of the HKSAR under Grant Nos. HKU10/CRF/08, 605011, and 706110P. The PPMS facilities used for magneto transport measurements are supported by the Special Equipment Grant (SEG_CUHK06) from the UGC of the HKSAR.

 
GrantsNano-Spintronics - Quantum Control of Electron Spins in Semiconductors
 
DC FieldValue
dc.contributor.authorHe, H
 
dc.contributor.authorLi, B
 
dc.contributor.authorLiu, H
 
dc.contributor.authorGuo, X
 
dc.contributor.authorWang, Z
 
dc.contributor.authorXie, M
 
dc.contributor.authorWang, J
 
dc.date.accessioned2012-02-03T06:14:13Z
 
dc.date.available2012-02-03T06:14:13Z
 
dc.date.issued2012
 
dc.description.abstractLinear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. © 2012 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationApplied Physics Letters, 2012, v. 100 n. 3, article no. 032105 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3677669
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3677669
 
dc.identifier.hkuros198603
 
dc.identifier.isiWOS:000299386800027
Funding AgencyGrant Number
Research Grant Council of the HKSARHKU10/CRF/08
605011
706110P
UGC of the HKSARSEG_CUHK06
Funding Information:

We wish to acknowledge useful discussions with Dr. Haizhou Lu and Professor Shunqing Shen. This work was partially supported by the Research Grant Council of the HKSAR under Grant Nos. HKU10/CRF/08, 605011, and 706110P. The PPMS facilities used for magneto transport measurements are supported by the Special Equipment Grant (SEG_CUHK06) from the UGC of the HKSAR.

 
dc.identifier.issn0003-6951
2013 Impact Factor: 3.515
 
dc.identifier.issue3, article no. 032105
 
dc.identifier.scopuseid_2-s2.0-84863011657
 
dc.identifier.urihttp://hdl.handle.net/10722/144567
 
dc.identifier.volume100
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.projectNano-Spintronics - Quantum Control of Electron Spins in Semiconductors
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsAfter publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal).
 
dc.subjectGap opening
 
dc.subjectHigh magnetic fields
 
dc.subjectHigh-field
 
dc.subjectNegative magneto-resistance
 
dc.subjectSurface state
 
dc.titleHigh-field linear magneto-resistance in topological insulator Bi2Se3 thin films
 
dc.typeArticle
 
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<item><contributor.author>He, H</contributor.author>
<contributor.author>Li, B</contributor.author>
<contributor.author>Liu, H</contributor.author>
<contributor.author>Guo, X</contributor.author>
<contributor.author>Wang, Z</contributor.author>
<contributor.author>Xie, M</contributor.author>
<contributor.author>Wang, J</contributor.author>
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<description.abstract>Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. &#169; 2012 American Institute of Physics.</description.abstract>
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Before publication:
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<subject>High magnetic fields</subject>
<subject>High-field</subject>
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Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong University of Science and Technology