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Article: High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
| Title | High-field linear magneto-resistance in topological insulator Bi2Se3 thin films | ||||||
|---|---|---|---|---|---|---|---|
| Authors | |||||||
| Keywords | Gap opening High magnetic fields High-field Negative magneto-resistance Surface state | ||||||
| Issue Date | 2012 | ||||||
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
| Citation | Applied Physics Letters, 2012, v. 100 n. 3, article no. 032105 How to Cite? | ||||||
| Abstract | Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. © 2012 American Institute of Physics. | ||||||
| Persistent Identifier | http://hdl.handle.net/10722/144567 | ||||||
| ISSN | 2021 Impact Factor: 3.971 2020 SCImago Journal Rankings: 1.182 | ||||||
| ISI Accession Number ID |
Funding Information: We wish to acknowledge useful discussions with Dr. Haizhou Lu and Professor Shunqing Shen. This work was partially supported by the Research Grant Council of the HKSAR under Grant Nos. HKU10/CRF/08, 605011, and 706110P. The PPMS facilities used for magneto transport measurements are supported by the Special Equipment Grant (SEG_CUHK06) from the UGC of the HKSAR. | ||||||
| Grants |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | He, H | en_US |
| dc.contributor.author | Li, B | en_US |
| dc.contributor.author | Liu, H | en_US |
| dc.contributor.author | Guo, X | en_US |
| dc.contributor.author | Wang, Z | en_US |
| dc.contributor.author | Xie, M | en_US |
| dc.contributor.author | Wang, J | - |
| dc.date.accessioned | 2012-02-03T06:14:13Z | - |
| dc.date.available | 2012-02-03T06:14:13Z | - |
| dc.date.issued | 2012 | en_US |
| dc.identifier.citation | Applied Physics Letters, 2012, v. 100 n. 3, article no. 032105 | - |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/144567 | - |
| dc.description.abstract | Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. © 2012 American Institute of Physics. | - |
| dc.language | eng | en_US |
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
| dc.relation.ispartof | Applied Physics Letters | en_US |
| dc.rights | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2012, v. 100 n. 3, article no. 032105 and may be found at https://doi.org/10.1063/1.3677669 | - |
| dc.subject | Gap opening | - |
| dc.subject | High magnetic fields | - |
| dc.subject | High-field | - |
| dc.subject | Negative magneto-resistance | - |
| dc.subject | Surface state | - |
| dc.title | High-field linear magneto-resistance in topological insulator Bi2Se3 thin films | en_US |
| dc.type | Article | en_US |
| dc.identifier.email | Xie, M: mhxie@hku.hk | en_US |
| dc.identifier.email | Wang, J: phjwang@ust.hk | - |
| dc.identifier.authority | Xie, MH=rp00818 | en_US |
| dc.description.nature | published_or_final_version | - |
| dc.identifier.doi | 10.1063/1.3677669 | - |
| dc.identifier.scopus | eid_2-s2.0-84863011657 | - |
| dc.identifier.hkuros | 198603 | en_US |
| dc.identifier.volume | 100 | en_US |
| dc.identifier.issue | 3 | - |
| dc.identifier.spage | article no. 032105 | - |
| dc.identifier.epage | article no. 032105 | - |
| dc.identifier.isi | WOS:000299386800027 | - |
| dc.publisher.place | United States | - |
| dc.relation.project | Nano-Spintronics - Quantum Control of Electron Spins in Semiconductors | - |
| dc.identifier.issnl | 0003-6951 | - |