File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Derivation of V function for LR 115 SSNTD from its sensitivity to 220Rn in a diffusion chamber

TitleDerivation of V function for LR 115 SSNTD from its sensitivity to 220Rn in a diffusion chamber
Authors
KeywordsBulk etch
Diffusion chamber
LR 115 detector
Solid-state nuclear track detector
Track etch
Issue Date2007
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/apradiso
Citation
Applied Radiation And Isotopes, 2007, v. 65 n. 3, p. 313-317 How to Cite?
AbstractThe sensitivity of the LR 115 detector inside a diffusion chamber to 220Rn gas concentration is dependent on the removed active layer thickness during chemical etching. This dependence is related to the V function for the LR 115 detector (where V is the ratio between the track etch velocity V t and the bulk etch velocity V b) and the geometry of the diffusion chamber. The present paper presents the experimentally determined relationship between the sensitivity of the LR 115 detector inside a Karlsruhe diffusion chamber (determined from the number of etched tracks completely penetrating the active cellulose nitrate layer) and the removed active layer thickness. These data were used to derive the V function for the LR 115 detector, which took the functional form of the Durrani-Green's function, i.e., V = 1 + (a 1 e - a2 R + a 3 e - a4 R) (1 - e - a5 R), with the best-fitted constants as a 1 = 14.50, a 2 = 0.50, a 3 = 3.9 and a 4 = 0.066. © 2006 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/143783
ISSN
2015 Impact Factor: 1.136
2015 SCImago Journal Rankings: 0.540
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLeung, SYYen_HK
dc.contributor.authorNikezic, Den_HK
dc.contributor.authorLeung, JKCen_HK
dc.contributor.authorYu, KNen_HK
dc.date.accessioned2011-12-21T08:55:13Z-
dc.date.available2011-12-21T08:55:13Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Radiation And Isotopes, 2007, v. 65 n. 3, p. 313-317en_HK
dc.identifier.issn0969-8043en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143783-
dc.description.abstractThe sensitivity of the LR 115 detector inside a diffusion chamber to 220Rn gas concentration is dependent on the removed active layer thickness during chemical etching. This dependence is related to the V function for the LR 115 detector (where V is the ratio between the track etch velocity V t and the bulk etch velocity V b) and the geometry of the diffusion chamber. The present paper presents the experimentally determined relationship between the sensitivity of the LR 115 detector inside a Karlsruhe diffusion chamber (determined from the number of etched tracks completely penetrating the active cellulose nitrate layer) and the removed active layer thickness. These data were used to derive the V function for the LR 115 detector, which took the functional form of the Durrani-Green's function, i.e., V = 1 + (a 1 e - a2 R + a 3 e - a4 R) (1 - e - a5 R), with the best-fitted constants as a 1 = 14.50, a 2 = 0.50, a 3 = 3.9 and a 4 = 0.066. © 2006 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/apradisoen_HK
dc.relation.ispartofApplied Radiation and Isotopesen_HK
dc.subjectBulk etchen_HK
dc.subjectDiffusion chamberen_HK
dc.subjectLR 115 detectoren_HK
dc.subjectSolid-state nuclear track detectoren_HK
dc.subjectTrack etchen_HK
dc.titleDerivation of V function for LR 115 SSNTD from its sensitivity to 220Rn in a diffusion chamberen_HK
dc.typeArticleen_HK
dc.identifier.emailLeung, JKC: jkcleung@hku.hken_HK
dc.identifier.authorityLeung, JKC=rp00732en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apradiso.2006.08.006en_HK
dc.identifier.pmid17029818-
dc.identifier.scopuseid_2-s2.0-33845762787en_HK
dc.identifier.hkuros198152en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33845762787&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume65en_HK
dc.identifier.issue3en_HK
dc.identifier.spage313en_HK
dc.identifier.epage317en_HK
dc.identifier.isiWOS:000244021000007-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLeung, SYY=55168680800en_HK
dc.identifier.scopusauthoridNikezic, D=35614145500en_HK
dc.identifier.scopusauthoridLeung, JKC=24080627200en_HK
dc.identifier.scopusauthoridYu, KN=7403385896en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats