File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaNSi heterojunctions

TitleGrowth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaNSi heterojunctions
Authors
KeywordsAmorphous-like
Crystallinities
Epifilms
Gan film
Growth conditions
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 110 n. 9 How to Cite?
AbstractGrowths of GaN on Si(111)- (7 × 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a lowerature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the higherature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n --Si substrate shows rectifying characteristics. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143782
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of the Hong Kong Special Administrative Region, China7048/08P
Funding Information:

We acknowledge the help from W. K. Ho in the growth and SEM experiment, A. M. C. Ng for electrode making and preliminary transport measurements, and Y.F. Chan for providing the TEM data. This work was financially supported by a grant from the Research Grant Council of the Hong Kong Special Administrative Region, China, under the grant No. 7048/08P.

References

 

DC FieldValueLanguage
dc.contributor.authorXu, Zen_HK
dc.contributor.authorZhang, Len_HK
dc.contributor.authorHe, Hen_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorXie, Men_HK
dc.date.accessioned2011-12-21T08:55:13Z-
dc.date.available2011-12-21T08:55:13Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 9en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143782-
dc.description.abstractGrowths of GaN on Si(111)- (7 × 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a lowerature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the higherature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n --Si substrate shows rectifying characteristics. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 093514) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p093514_s1).en_US
dc.subjectAmorphous-like-
dc.subjectCrystallinities-
dc.subjectEpifilms-
dc.subjectGan film-
dc.subjectGrowth conditions-
dc.titleGrowth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaNSi heterojunctionsen_HK
dc.typeArticleen_HK
dc.identifier.emailXie, M: mhxie@hku.hken_HK
dc.identifier.authorityXie, M=rp00818en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3658850en_HK
dc.identifier.scopuseid_2-s2.0-81355142851en_HK
dc.identifier.hkuros198038en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-81355142851&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000297062100030-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, Z=25645146500en_HK
dc.identifier.scopusauthoridZhang, L=54416533800en_HK
dc.identifier.scopusauthoridHe, H=9633178800en_HK
dc.identifier.scopusauthoridWang, J=36599750200en_HK
dc.identifier.scopusauthoridXie, M=7202255416en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats