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Article: Effect of the starting surfaces of GaN on defect formation in epitaxial Co thin films

TitleEffect of the starting surfaces of GaN on defect formation in epitaxial Co thin films
Authors
KeywordsAmorphous regions
Co thin films
Defect formation
Epifilms
Hetero interfaces
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 110 n. 9 How to Cite?
AbstractGrowths of Co epifilms on GaN(0001)-"1 × 1" and (1 × 1) surfaces were studied, where the structural properties of the crystals and the interfaces are compared. Stacking faults are seen to be abundant in epitaxial Co films grown on excess Ga covered GaN(0001)- "1 × 1" surface. Such stacking defects are effectively suppressed in Co films grown on less excess Ga covered GaN(0001)-(1 × 1) surfaces. The hetero-interface between Co and GaN(0001) is characterized by a disordered or amorphous region, and diffusion of Ga and N from the substrate into Co is suggested. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143781
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
NSFC/RGC of the Natural Science Foundation of China
Hong Kong Special Administrative Region, ChinaN_HKU705/07
Funding Information:

We acknowledge technical support from Mr. W. K. Ho. This work was financially supported from the NSFC/RGC Joint Research Scheme of the Natural Science Foundation of China and Hong Kong Special Administrative Region, China, under Grant No. N_HKU705/07.

References

 

DC FieldValueLanguage
dc.contributor.authorLi, HDen_HK
dc.contributor.authorWong, TLen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2011-12-21T08:55:12Z-
dc.date.available2011-12-21T08:55:12Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 9en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143781-
dc.description.abstractGrowths of Co epifilms on GaN(0001)-"1 × 1" and (1 × 1) surfaces were studied, where the structural properties of the crystals and the interfaces are compared. Stacking faults are seen to be abundant in epitaxial Co films grown on excess Ga covered GaN(0001)- "1 × 1" surface. Such stacking defects are effectively suppressed in Co films grown on less excess Ga covered GaN(0001)-(1 × 1) surfaces. The hetero-interface between Co and GaN(0001) is characterized by a disordered or amorphous region, and diffusion of Ga and N from the substrate into Co is suggested. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 093501) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p093501_s1).en_US
dc.subjectAmorphous regions-
dc.subjectCo thin films-
dc.subjectDefect formation-
dc.subjectEpifilms-
dc.subjectHetero interfaces-
dc.titleEffect of the starting surfaces of GaN on defect formation in epitaxial Co thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailLi, HD: hdli1978@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityLi, HD=rp00739en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3652761en_HK
dc.identifier.scopuseid_2-s2.0-81355136194en_HK
dc.identifier.hkuros198037en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-81355136194&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000297062100017-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, HD=36441549600en_HK
dc.identifier.scopusauthoridWong, TL=26321269800en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridWang, J=54416736600en_HK
dc.identifier.scopusauthoridLi, Q=54415827300en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK

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