File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Growth characteristics of topological insulator Bi 2Se 3 films on different substrates

TitleGrowth characteristics of topological insulator Bi 2Se 3 films on different substrates
Authors
KeywordsA1. Substrates
A3. Molecular beam epitaxy
B1. Bismuth compounds
B2. Topological insulator
Issue Date2011
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 2011, v. 334 n. 1, p. 96-102 How to Cite?
Abstract
Molecular -beam epitaxy of topological insulator Bi 2Se 3 on different substrates is carried out, including on clean and hydrogen-terminated Si(111), bismuth (Bi) induced Si(1 1 1)(3×3) and (3×3) surfaces, GaN, and several selenide compounds. Epifilms surface and structural properties are characterized and the effects of surface structure and lattice misfit are indicated. It is found that substrates that are inert to chemical reaction with Bi and/or selenium (Se) and have small lattice misfits with Bi 2Se 3 appear advantageous to single-crystalline Bi 2Se 3 film growth. By using vicinal substrates, rotation or twin domains are effectively suppressed. © 2011 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/143779
ISSN
2013 Impact Factor: 1.693
2013 SCImago Journal Rankings: 0.962
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative RegionHKU 7061/10P
HKU 10/CRF/08
Funding Information:

We wish to thank T.L. Wang and N. Wang for the TEM measurements, and S.Y. Chui for his help in XRD experiments. The project is financially supported by a General Research Fund (no. HKU 7061/10P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region.

References

 

Author Affiliations
  1. The University of Hong Kong
  2. Beijing Jiaotong Daxue
DC FieldValueLanguage
dc.contributor.authorWang, ZYen_HK
dc.contributor.authorLi, HDen_HK
dc.contributor.authorGuo, Xen_HK
dc.contributor.authorHo, WKen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2011-12-21T08:55:10Z-
dc.date.available2011-12-21T08:55:10Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Crystal Growth, 2011, v. 334 n. 1, p. 96-102en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143779-
dc.description.abstractMolecular -beam epitaxy of topological insulator Bi 2Se 3 on different substrates is carried out, including on clean and hydrogen-terminated Si(111), bismuth (Bi) induced Si(1 1 1)(3×3) and (3×3) surfaces, GaN, and several selenide compounds. Epifilms surface and structural properties are characterized and the effects of surface structure and lattice misfit are indicated. It is found that substrates that are inert to chemical reaction with Bi and/or selenium (Se) and have small lattice misfits with Bi 2Se 3 appear advantageous to single-crystalline Bi 2Se 3 film growth. By using vicinal substrates, rotation or twin domains are effectively suppressed. © 2011 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.subjectA1. Substratesen_HK
dc.subjectA3. Molecular beam epitaxyen_HK
dc.subjectB1. Bismuth compoundsen_HK
dc.subjectB2. Topological insulatoren_HK
dc.titleGrowth characteristics of topological insulator Bi 2Se 3 films on different substratesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-0248&volume=334&spage=96&epage=102&date=2011&atitle=Growth+characteristics+of+topological+insulator+Bi2Se3+films+on+different+substratesen_US
dc.identifier.emailLi, HD: hdli1978@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityLi, HD=rp00739en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.jcrysgro.2011.08.029en_HK
dc.identifier.scopuseid_2-s2.0-80053320706en_HK
dc.identifier.hkuros197905en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80053320706&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume334en_HK
dc.identifier.issue1en_HK
dc.identifier.spage96en_HK
dc.identifier.epage102en_HK
dc.identifier.isiWOS:000296269000016-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridWang, ZY=23978772700en_HK
dc.identifier.scopusauthoridLi, HD=36441549600en_HK
dc.identifier.scopusauthoridGuo, X=34770102100en_HK
dc.identifier.scopusauthoridHo, WK=18040061300en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats