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Article: Growth characteristics of topological insulator Bi 2Se 3 films on different substrates
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TitleGrowth characteristics of topological insulator Bi 2Se 3 films on different substrates
 
AuthorsWang, ZY1
Li, HD1 2
Guo, X1
Ho, WK1
Xie, MH1
 
KeywordsA1. Substrates
A3. Molecular beam epitaxy
B1. Bismuth compounds
B2. Topological insulator
 
Issue Date2011
 
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
 
CitationJournal Of Crystal Growth, 2011, v. 334 n. 1, p. 96-102 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
 
AbstractMolecular -beam epitaxy of topological insulator Bi 2Se 3 on different substrates is carried out, including on clean and hydrogen-terminated Si(111), bismuth (Bi) induced Si(1 1 1)(3×3) and (3×3) surfaces, GaN, and several selenide compounds. Epifilms surface and structural properties are characterized and the effects of surface structure and lattice misfit are indicated. It is found that substrates that are inert to chemical reaction with Bi and/or selenium (Se) and have small lattice misfits with Bi 2Se 3 appear advantageous to single-crystalline Bi 2Se 3 film growth. By using vicinal substrates, rotation or twin domains are effectively suppressed. © 2011 Elsevier B.V. All rights reserved.
 
ISSN0022-0248
2013 Impact Factor: 1.693
2013 SCImago Journal Rankings: 0.962
 
DOIhttp://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
 
ISI Accession Number IDWOS:000296269000016
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative RegionHKU 7061/10P
HKU 10/CRF/08
Funding Information:

We wish to thank T.L. Wang and N. Wang for the TEM measurements, and S.Y. Chui for his help in XRD experiments. The project is financially supported by a General Research Fund (no. HKU 7061/10P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorWang, ZY
 
dc.contributor.authorLi, HD
 
dc.contributor.authorGuo, X
 
dc.contributor.authorHo, WK
 
dc.contributor.authorXie, MH
 
dc.date.accessioned2011-12-21T08:55:10Z
 
dc.date.available2011-12-21T08:55:10Z
 
dc.date.issued2011
 
dc.description.abstractMolecular -beam epitaxy of topological insulator Bi 2Se 3 on different substrates is carried out, including on clean and hydrogen-terminated Si(111), bismuth (Bi) induced Si(1 1 1)(3×3) and (3×3) surfaces, GaN, and several selenide compounds. Epifilms surface and structural properties are characterized and the effects of surface structure and lattice misfit are indicated. It is found that substrates that are inert to chemical reaction with Bi and/or selenium (Se) and have small lattice misfits with Bi 2Se 3 appear advantageous to single-crystalline Bi 2Se 3 film growth. By using vicinal substrates, rotation or twin domains are effectively suppressed. © 2011 Elsevier B.V. All rights reserved.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationJournal Of Crystal Growth, 2011, v. 334 n. 1, p. 96-102 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
 
dc.identifier.doihttp://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
 
dc.identifier.epage102
 
dc.identifier.hkuros197905
 
dc.identifier.isiWOS:000296269000016
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative RegionHKU 7061/10P
HKU 10/CRF/08
Funding Information:

We wish to thank T.L. Wang and N. Wang for the TEM measurements, and S.Y. Chui for his help in XRD experiments. The project is financially supported by a General Research Fund (no. HKU 7061/10P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region.

 
dc.identifier.issn0022-0248
2013 Impact Factor: 1.693
2013 SCImago Journal Rankings: 0.962
 
dc.identifier.issue1
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-80053320706
 
dc.identifier.spage96
 
dc.identifier.urihttp://hdl.handle.net/10722/143779
 
dc.identifier.volume334
 
dc.languageeng
 
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
 
dc.publisher.placeNetherlands
 
dc.relation.ispartofJournal of Crystal Growth
 
dc.relation.referencesReferences in Scopus
 
dc.subjectA1. Substrates
 
dc.subjectA3. Molecular beam epitaxy
 
dc.subjectB1. Bismuth compounds
 
dc.subjectB2. Topological insulator
 
dc.titleGrowth characteristics of topological insulator Bi 2Se 3 films on different substrates
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Beijing Jiaotong Daxue