Article: Growth characteristics of topological insulator Bi 2Se 3 films on different substrates

File Download Links for fulltext
(May Require Subscription)
Supplementary
  • Basic View
  • Metadata View
  • XML View
TitleGrowth characteristics of topological insulator Bi 2Se 3 films on different substrates
AuthorsWang, ZY1
Li, HD1 2
Guo, X1
Ho, WK1
Xie, MH1
KeywordsA1. Substrates
A3. Molecular beam epitaxy
B1. Bismuth compounds
B2. Topological insulator
Issue Date2011
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
CitationJournal Of Crystal Growth, 2011, v. 334 n. 1, p. 96-102 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
AbstractMolecular -beam epitaxy of topological insulator Bi 2Se 3 on different substrates is carried out, including on clean and hydrogen-terminated Si(111), bismuth (Bi) induced Si(1 1 1)(3×3) and (3×3) surfaces, GaN, and several selenide compounds. Epifilms surface and structural properties are characterized and the effects of surface structure and lattice misfit are indicated. It is found that substrates that are inert to chemical reaction with Bi and/or selenium (Se) and have small lattice misfits with Bi 2Se 3 appear advantageous to single-crystalline Bi 2Se 3 film growth. By using vicinal substrates, rotation or twin domains are effectively suppressed. © 2011 Elsevier B.V. All rights reserved.
ISSN0022-0248
2011 Impact Factor: 1.726
2011 SCImago Journal Rankings: 0.183
DOIhttp://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
ISI Accession Number IDWOS:000296269000016
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative RegionHKU 7061/10P
HKU 10/CRF/08
Funding Information:

We wish to thank T.L. Wang and N. Wang for the TEM measurements, and S.Y. Chui for his help in XRD experiments. The project is financially supported by a General Research Fund (no. HKU 7061/10P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region.

ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorWang, ZY
dc.contributor.authorLi, HD
dc.contributor.authorGuo, X
dc.contributor.authorHo, WK
dc.contributor.authorXie, MH
dc.date.accessioned2011-12-21T08:55:10Z
dc.date.available2011-12-21T08:55:10Z
dc.date.issued2011
dc.description.abstractMolecular -beam epitaxy of topological insulator Bi 2Se 3 on different substrates is carried out, including on clean and hydrogen-terminated Si(111), bismuth (Bi) induced Si(1 1 1)(3×3) and (3×3) surfaces, GaN, and several selenide compounds. Epifilms surface and structural properties are characterized and the effects of surface structure and lattice misfit are indicated. It is found that substrates that are inert to chemical reaction with Bi and/or selenium (Se) and have small lattice misfits with Bi 2Se 3 appear advantageous to single-crystalline Bi 2Se 3 film growth. By using vicinal substrates, rotation or twin domains are effectively suppressed. © 2011 Elsevier B.V. All rights reserved.
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationJournal Of Crystal Growth, 2011, v. 334 n. 1, p. 96-102 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
dc.identifier.doihttp://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
dc.identifier.epage102
dc.identifier.hkuros197905
dc.identifier.isiWOS:000296269000016
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative RegionHKU 7061/10P
HKU 10/CRF/08
Funding Information:

We wish to thank T.L. Wang and N. Wang for the TEM measurements, and S.Y. Chui for his help in XRD experiments. The project is financially supported by a General Research Fund (no. HKU 7061/10P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region.

dc.identifier.issn0022-0248
2011 Impact Factor: 1.726
2011 SCImago Journal Rankings: 0.183
dc.identifier.issue1
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-80053320706
dc.identifier.spage96
dc.identifier.urihttp://hdl.handle.net/10722/143779
dc.identifier.volume334
dc.languageeng
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
dc.publisher.placeNetherlands
dc.relation.ispartofJournal of Crystal Growth
dc.relation.referencesReferences in Scopus
dc.subjectA1. Substrates
dc.subjectA3. Molecular beam epitaxy
dc.subjectB1. Bismuth compounds
dc.subjectB2. Topological insulator
dc.titleGrowth characteristics of topological insulator Bi 2Se 3 films on different substrates
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Beijing Jiaotong Daxue