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Conference Paper: Effect of doping precursors on the optical properties of Ce-doped ZnO nanorods
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TitleEffect of doping precursors on the optical properties of Ce-doped ZnO nanorods
 
AuthorsChen, XY1
Fang, F1
Ng, AMC1
Djurišić, AB1
Chan, WK1
Lui, HF3
Fong, PWK3
Surya, C3
Cheah, KW2
 
KeywordsLight-emitting diodes
Nanorods
Oxides
 
Issue Date2011
 
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
 
CitationThin Solid Films, 2011, v. 520 n. 3, p. 1125-1130 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.tsf.2011.08.022
 
AbstractWe have investigated the use of different cerium precursors for fabrication of Ce doped ZnO nanorods by electrodeposition. ZnO nanorods fabricated with different Ce precursors had similar morphology, but very different optical properties. The influence of annealing in oxygen at different temperatures on the optical properties of Ce doped ZnO nanorods was also studied. The as-grown samples exhibited very different ratios of ultraviolet to visible (defect) emission. The relative contributions of green and orange-red emissions in the emission spectra of annealed samples were also dependent on the precursor used, indicating that the types and concentrations of native defects were dependent on the precursor used. To explore the possibility of applications of these nanorods in ZnO-based devices, nanorods were also grown on p-GaN substrates. Two different Ce precursors in this case resulted in different current-voltage curves, as well as different electroluminescence and photoluminescence spectra of the devices. Obtained results are discussed. © 2011 Elsevier B.V. All rights reserved.
 
DescriptionSpecial Section: Proceedings of 7th International Workshop on Semiconductor Gas Sensors
 
ISSN0040-6090
2013 Impact Factor: 1.867
2013 SCImago Journal Rankings: 0.884
 
DOIhttp://dx.doi.org/10.1016/j.tsf.2011.08.022
 
ISI Accession Number IDWOS:000298486600041
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorChen, XY
 
dc.contributor.authorFang, F
 
dc.contributor.authorNg, AMC
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorChan, WK
 
dc.contributor.authorLui, HF
 
dc.contributor.authorFong, PWK
 
dc.contributor.authorSurya, C
 
dc.contributor.authorCheah, KW
 
dc.date.accessioned2011-12-21T08:47:57Z
 
dc.date.available2011-12-21T08:47:57Z
 
dc.date.issued2011
 
dc.description.abstractWe have investigated the use of different cerium precursors for fabrication of Ce doped ZnO nanorods by electrodeposition. ZnO nanorods fabricated with different Ce precursors had similar morphology, but very different optical properties. The influence of annealing in oxygen at different temperatures on the optical properties of Ce doped ZnO nanorods was also studied. The as-grown samples exhibited very different ratios of ultraviolet to visible (defect) emission. The relative contributions of green and orange-red emissions in the emission spectra of annealed samples were also dependent on the precursor used, indicating that the types and concentrations of native defects were dependent on the precursor used. To explore the possibility of applications of these nanorods in ZnO-based devices, nanorods were also grown on p-GaN substrates. Two different Ce precursors in this case resulted in different current-voltage curves, as well as different electroluminescence and photoluminescence spectra of the devices. Obtained results are discussed. © 2011 Elsevier B.V. All rights reserved.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.descriptionSpecial Section: Proceedings of 7th International Workshop on Semiconductor Gas Sensors
 
dc.identifier.citationThin Solid Films, 2011, v. 520 n. 3, p. 1125-1130 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.tsf.2011.08.022
 
dc.identifier.doihttp://dx.doi.org/10.1016/j.tsf.2011.08.022
 
dc.identifier.epage1130
 
dc.identifier.hkuros198041
 
dc.identifier.isiWOS:000298486600041
 
dc.identifier.issn0040-6090
2013 Impact Factor: 1.867
2013 SCImago Journal Rankings: 0.884
 
dc.identifier.issue3
 
dc.identifier.scopuseid_2-s2.0-81855166868
 
dc.identifier.spage1125
 
dc.identifier.urihttp://hdl.handle.net/10722/143739
 
dc.identifier.volume520
 
dc.languageeng
 
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
 
dc.publisher.placeSwitzerland
 
dc.relation.ispartofThin Solid Films
 
dc.relation.referencesReferences in Scopus
 
dc.subjectLight-emitting diodes
 
dc.subjectNanorods
 
dc.subjectOxides
 
dc.titleEffect of doping precursors on the optical properties of Ce-doped ZnO nanorods
 
dc.typeConference_Paper
 
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<contributor.author>Chan, WK</contributor.author>
<contributor.author>Lui, HF</contributor.author>
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<description.abstract>We have investigated the use of different cerium precursors for fabrication of Ce doped ZnO nanorods by electrodeposition. ZnO nanorods fabricated with different Ce precursors had similar morphology, but very different optical properties. The influence of annealing in oxygen at different temperatures on the optical properties of Ce doped ZnO nanorods was also studied. The as-grown samples exhibited very different ratios of ultraviolet to visible (defect) emission. The relative contributions of green and orange-red emissions in the emission spectra of annealed samples were also dependent on the precursor used, indicating that the types and concentrations of native defects were dependent on the precursor used. To explore the possibility of applications of these nanorods in ZnO-based devices, nanorods were also grown on p-GaN substrates. Two different Ce precursors in this case resulted in different current-voltage curves, as well as different electroluminescence and photoluminescence spectra of the devices. Obtained results are discussed. &#169; 2011 Elsevier B.V. All rights reserved.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong Polytechnic University