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Conference Paper: Effect of doping precursors on the optical properties of Ce-doped ZnO nanorods

TitleEffect of doping precursors on the optical properties of Ce-doped ZnO nanorods
Authors
KeywordsLight-emitting diodes
Nanorods
Oxides
Issue Date2011
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2011, v. 520 n. 3, p. 1125-1130 How to Cite?
Abstract
We have investigated the use of different cerium precursors for fabrication of Ce doped ZnO nanorods by electrodeposition. ZnO nanorods fabricated with different Ce precursors had similar morphology, but very different optical properties. The influence of annealing in oxygen at different temperatures on the optical properties of Ce doped ZnO nanorods was also studied. The as-grown samples exhibited very different ratios of ultraviolet to visible (defect) emission. The relative contributions of green and orange-red emissions in the emission spectra of annealed samples were also dependent on the precursor used, indicating that the types and concentrations of native defects were dependent on the precursor used. To explore the possibility of applications of these nanorods in ZnO-based devices, nanorods were also grown on p-GaN substrates. Two different Ce precursors in this case resulted in different current-voltage curves, as well as different electroluminescence and photoluminescence spectra of the devices. Obtained results are discussed. © 2011 Elsevier B.V. All rights reserved.
DescriptionSpecial Section: Proceedings of 7th International Workshop on Semiconductor Gas Sensors
Persistent Identifierhttp://hdl.handle.net/10722/143739
ISSN
2013 Impact Factor: 1.867
2013 SCImago Journal Rankings: 0.884
ISI Accession Number ID
References

 

Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong Polytechnic University
DC FieldValueLanguage
dc.contributor.authorChen, XYen_HK
dc.contributor.authorFang, Fen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorLui, HFen_HK
dc.contributor.authorFong, PWKen_HK
dc.contributor.authorSurya, Cen_HK
dc.contributor.authorCheah, KWen_HK
dc.date.accessioned2011-12-21T08:47:57Z-
dc.date.available2011-12-21T08:47:57Z-
dc.date.issued2011en_HK
dc.identifier.citationThin Solid Films, 2011, v. 520 n. 3, p. 1125-1130en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143739-
dc.descriptionSpecial Section: Proceedings of 7th International Workshop on Semiconductor Gas Sensors-
dc.description.abstractWe have investigated the use of different cerium precursors for fabrication of Ce doped ZnO nanorods by electrodeposition. ZnO nanorods fabricated with different Ce precursors had similar morphology, but very different optical properties. The influence of annealing in oxygen at different temperatures on the optical properties of Ce doped ZnO nanorods was also studied. The as-grown samples exhibited very different ratios of ultraviolet to visible (defect) emission. The relative contributions of green and orange-red emissions in the emission spectra of annealed samples were also dependent on the precursor used, indicating that the types and concentrations of native defects were dependent on the precursor used. To explore the possibility of applications of these nanorods in ZnO-based devices, nanorods were also grown on p-GaN substrates. Two different Ce precursors in this case resulted in different current-voltage curves, as well as different electroluminescence and photoluminescence spectra of the devices. Obtained results are discussed. © 2011 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectLight-emitting diodesen_HK
dc.subjectNanorodsen_HK
dc.subjectOxidesen_HK
dc.titleEffect of doping precursors on the optical properties of Ce-doped ZnO nanorodsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2011.08.022en_HK
dc.identifier.scopuseid_2-s2.0-81855166868en_HK
dc.identifier.hkuros198041en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-81855166868&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume520en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1125en_HK
dc.identifier.epage1130en_HK
dc.identifier.isiWOS:000298486600041-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridChen, XY=35182594600en_HK
dc.identifier.scopusauthoridFang, F=7202929817en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, WK=23967779900en_HK
dc.identifier.scopusauthoridLui, HF=36815539600en_HK
dc.identifier.scopusauthoridFong, PWK=24080393500en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK

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