File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Mechanism of optical degradation in microstructured InGaN light-emitting diodes

TitleMechanism of optical degradation in microstructured InGaN light-emitting diodes
Authors
Li, ZLLi, KHChoi, HW
KeywordsDegradation mechanism
Device lifetime
Electrical characteristic
Led arrays
Light-extraction efficiency
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2010, v. 108 n. 11, article no. 114511 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3517829
AbstractWhile the enhancement of light extraction efficiency from microstructured InGaN light-emitting diodes (μLED) has been firmly established, there is concern over the effect of microstructuring on the device lifetimes. A study on the electrical characteristics and reliability of μLED arrays has been carried out. Despite improved optical performance, expanded device sidewalls served to accelerate the rate of optical degradation, adversely affect the lifetimes of devices. Through current-voltage plots and noise spectrum measurements, vertical current conduction along the plasma-damaged sidewalls was identified as the key degradation mechanism. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143460
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000285474100134
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7118/09E
Funding Information:

This work was supported by a GRF grant of the Research Grant Council of Hong Kong (Project No. HKU 7118/09E).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, ZLen_HK
dc.contributor.authorLi, KHen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2011-11-29T05:18:15Z-
dc.date.available2011-11-29T05:18:15Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal of Applied Physics, 2010, v. 108 n. 11, article no. 114511-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143460-
dc.description.abstractWhile the enhancement of light extraction efficiency from microstructured InGaN light-emitting diodes (μLED) has been firmly established, there is concern over the effect of microstructuring on the device lifetimes. A study on the electrical characteristics and reliability of μLED arrays has been carried out. Despite improved optical performance, expanded device sidewalls served to accelerate the rate of optical degradation, adversely affect the lifetimes of devices. Through current-voltage plots and noise spectrum measurements, vertical current conduction along the plasma-damaged sidewalls was identified as the key degradation mechanism. © 2010 American Institute of Physics.en_HK
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2010, v. 108 n. 11, article no. 114511 and may be found at https://doi.org/10.1063/1.3517829-
dc.subjectDegradation mechanism-
dc.subjectDevice lifetime-
dc.subjectElectrical characteristic-
dc.subjectLed arrays-
dc.subjectLight-extraction efficiency-
dc.titleMechanism of optical degradation in microstructured InGaN light-emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=108&issue=11, article no. 114511&spage=&epage=&date=2010&atitle=Mechanism+of+optical+degradation+in+microstructured+InGaN+light-emitting+diodes-
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3517829en_HK
dc.identifier.scopuseid_2-s2.0-78751524977en_HK
dc.identifier.hkuros183733-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78751524977&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume108en_HK
dc.identifier.issue11en_HK
dc.identifier.spagearticle no. 114511-
dc.identifier.epagearticle no. 114511-
dc.identifier.isiWOS:000285474100134-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, ZL=34167922900en_HK
dc.identifier.scopusauthoridLi, KH=8976237500en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.issnl0021-8979-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats