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Article: Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography

TitleAir-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography
Authors
KeywordsAir-gaps
Band gaps
Closed-packed arrays
Dry-etch
Equilibrium positions
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 109 n. 2 How to Cite?
AbstractWe report on the fabrication of ordered hexagonal arrays of air-spaced GaN nanopillars by nanosphere lithography. A self-assembled two-dimensional silica nanosphere mask was initially formed by spin-coating. Prior to pattern transfer to the GaN substrate, a silica-selective dry etch recipe was employed to reduce the dimensions of the nanospheres, without shifting their equilibrium positions. This process step was crucial to be formation of air-spaced hexagonal arrays of nanospheres, as opposed to closed-packed arrays normally achieved by nanosphere lithography. This pattern is then transferred to the wafer to form air-spaced nanopillars. By introducing air gaps between pillars, a photonic band gap (PBG) in the visible region can be opened up, which is usually nonexistent in closed-packed nanopillar arrays. The PBG structures were designed using the plane wave expansion algorithm for band structure computations. The existence and positions of band gaps have been verified through optical transmittance spectroscopy, which correlated well with predictions from simulations. From photoluminescence (PL) spectroscopy, a fourfold increase in PL intensity was observed and compared to an as-grown sample, demonstrating the effectiveness of well-designed self-assembled PBG structures for suppressing undesired optical guiding mode via PBG and for promoting light extraction. The effects of defects in the nanopillar array on the optical properties are also critically assessed. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143458
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7118/09E
Funding Information:

This work was supported by a GRF grant of the Research Grant Council of Hong Kong (Project No. HKU 7118/09E).

References

 

DC FieldValueLanguage
dc.contributor.authorLi, KHen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2011-11-28T08:57:20Z-
dc.date.available2011-11-28T08:57:20Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 109 n. 2en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143458-
dc.description.abstractWe report on the fabrication of ordered hexagonal arrays of air-spaced GaN nanopillars by nanosphere lithography. A self-assembled two-dimensional silica nanosphere mask was initially formed by spin-coating. Prior to pattern transfer to the GaN substrate, a silica-selective dry etch recipe was employed to reduce the dimensions of the nanospheres, without shifting their equilibrium positions. This process step was crucial to be formation of air-spaced hexagonal arrays of nanospheres, as opposed to closed-packed arrays normally achieved by nanosphere lithography. This pattern is then transferred to the wafer to form air-spaced nanopillars. By introducing air gaps between pillars, a photonic band gap (PBG) in the visible region can be opened up, which is usually nonexistent in closed-packed nanopillar arrays. The PBG structures were designed using the plane wave expansion algorithm for band structure computations. The existence and positions of band gaps have been verified through optical transmittance spectroscopy, which correlated well with predictions from simulations. From photoluminescence (PL) spectroscopy, a fourfold increase in PL intensity was observed and compared to an as-grown sample, demonstrating the effectiveness of well-designed self-assembled PBG structures for suppressing undesired optical guiding mode via PBG and for promoting light extraction. The effects of defects in the nanopillar array on the optical properties are also critically assessed. © 2011 American Institute of Physics.en_HK
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 109 n. 2, article no. 023107) and may be found at (http://jap.aip.org/resource/1/japiau/v109/i2/p023107_s1).-
dc.subjectAir-gaps-
dc.subjectBand gaps-
dc.subjectClosed-packed arrays-
dc.subjectDry-etch-
dc.subjectEquilibrium positions-
dc.titleAir-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithographyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=109&issue=2, article no. 023107&spage=&epage=&date=2011&atitle=Air-spaced+GaN+nanopillar+photonic+band+gap+structures+patterned+by+nanosphere+lithography-
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3531972en_HK
dc.identifier.scopuseid_2-s2.0-79551655401en_HK
dc.identifier.hkuros183734-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79551655401&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume109en_HK
dc.identifier.issue2en_HK
dc.identifier.isiWOS:000286896400008-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, KH=8976237500en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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