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Conference Paper: Process-variation-aware electromagnetic-semiconductor coupled simulation
Title | Process-variation-aware electromagnetic-semiconductor coupled simulation |
---|---|
Authors | |
Keywords | Coupled simulation Doping profiles Geometrical variations High frequency (HF) Material variation |
Issue Date | 2011 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000089 |
Citation | The 2011 IEEE International Symposium on Circuits and Systems (ISCAS), Rio de Janeiro, Brazil, 15-18 May 2011. In Proceedings of ISCAS, 2011, p. 2853-2856 How to Cite? |
Abstract | We develop a new method based on the high-frequency electromagnetic (EM)-semiconductor coupled simulation to analyze the impact of multi-type process variations happen around semi-conductormetal structure. It is competent to simultaneously handle geometrical variations like surface roughness and material variations like semi-conductor doping profile, which are difficult for traditional stand alone simulation methods. A sparse grid based stochastic spectral collocation method (SSCM) combined with principle factor analysis (PFA) is implemented to accelerate the stochastic simulation. Numerical results confirm the validity and significance of our variational coupled simulation framework. © 2011 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/143400 |
ISSN | 2023 SCImago Journal Rankings: 0.307 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xu, Y | en_HK |
dc.contributor.author | Chen, Q | en_HK |
dc.contributor.author | Jiang, L | en_HK |
dc.contributor.author | Wong, N | en_HK |
dc.date.accessioned | 2011-11-24T10:05:51Z | - |
dc.date.available | 2011-11-24T10:05:51Z | - |
dc.date.issued | 2011 | en_HK |
dc.identifier.citation | The 2011 IEEE International Symposium on Circuits and Systems (ISCAS), Rio de Janeiro, Brazil, 15-18 May 2011. In Proceedings of ISCAS, 2011, p. 2853-2856 | en_HK |
dc.identifier.issn | 0271-4310 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/143400 | - |
dc.description.abstract | We develop a new method based on the high-frequency electromagnetic (EM)-semiconductor coupled simulation to analyze the impact of multi-type process variations happen around semi-conductormetal structure. It is competent to simultaneously handle geometrical variations like surface roughness and material variations like semi-conductor doping profile, which are difficult for traditional stand alone simulation methods. A sparse grid based stochastic spectral collocation method (SSCM) combined with principle factor analysis (PFA) is implemented to accelerate the stochastic simulation. Numerical results confirm the validity and significance of our variational coupled simulation framework. © 2011 IEEE. | en_HK |
dc.language | eng | en_US |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000089 | - |
dc.relation.ispartof | Proceedings - IEEE International Symposium on Circuits and Systems | en_HK |
dc.subject | Coupled simulation | - |
dc.subject | Doping profiles | - |
dc.subject | Geometrical variations | - |
dc.subject | High frequency (HF) | - |
dc.subject | Material variation | - |
dc.title | Process-variation-aware electromagnetic-semiconductor coupled simulation | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0271-4302&volume=&spage=2853&epage=2856&date=2011&atitle=Process-variation-aware+electromagnetic-semiconductor+coupled+simulation | en_US |
dc.identifier.email | Chen, Q: q1chen@hku.hk | en_HK |
dc.identifier.email | Jiang, L: jianglj@hku.hk | en_HK |
dc.identifier.email | Wong, N: nwong@eee.hku.hk | en_HK |
dc.identifier.authority | Chen, Q=rp01688 | en_HK |
dc.identifier.authority | Jiang, L=rp01338 | en_HK |
dc.identifier.authority | Wong, N=rp00190 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/ISCAS.2011.5938200 | en_HK |
dc.identifier.scopus | eid_2-s2.0-79960866257 | en_HK |
dc.identifier.hkuros | 197688 | en_US |
dc.identifier.hkuros | 192314 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79960866257&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.spage | 2853 | en_HK |
dc.identifier.epage | 2856 | en_HK |
dc.description.other | The 2011 IEEE International Symposium on Circuits and Systems (ISCAS), Rio de Janeiro, Brazil, 15-18 May 2011. In Proceedings of ISCAS, 2011, p. 2853-2856 | - |
dc.identifier.scopusauthorid | Xu, Y=44662080000 | en_HK |
dc.identifier.scopusauthorid | Chen, Q=18133382800 | en_HK |
dc.identifier.scopusauthorid | Jiang, L=36077777200 | en_HK |
dc.identifier.scopusauthorid | Wong, N=35235551600 | en_HK |
dc.identifier.issnl | 0271-4310 | - |