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Conference Paper: Process-variation-aware electromagnetic-semiconductor coupled simulation

TitleProcess-variation-aware electromagnetic-semiconductor coupled simulation
Authors
KeywordsCoupled simulation
Doping profiles
Geometrical variations
High frequency (HF)
Material variation
Issue Date2011
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000089
Citation
The 2011 IEEE International Symposium on Circuits and Systems (ISCAS), Rio de Janeiro, Brazil, 15-18 May 2011. In Proceedings of ISCAS, 2011, p. 2853-2856 How to Cite?
AbstractWe develop a new method based on the high-frequency electromagnetic (EM)-semiconductor coupled simulation to analyze the impact of multi-type process variations happen around semi-conductormetal structure. It is competent to simultaneously handle geometrical variations like surface roughness and material variations like semi-conductor doping profile, which are difficult for traditional stand alone simulation methods. A sparse grid based stochastic spectral collocation method (SSCM) combined with principle factor analysis (PFA) is implemented to accelerate the stochastic simulation. Numerical results confirm the validity and significance of our variational coupled simulation framework. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/143400
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorXu, Yen_HK
dc.contributor.authorChen, Qen_HK
dc.contributor.authorJiang, Len_HK
dc.contributor.authorWong, Nen_HK
dc.date.accessioned2011-11-24T10:05:51Z-
dc.date.available2011-11-24T10:05:51Z-
dc.date.issued2011en_HK
dc.identifier.citationThe 2011 IEEE International Symposium on Circuits and Systems (ISCAS), Rio de Janeiro, Brazil, 15-18 May 2011. In Proceedings of ISCAS, 2011, p. 2853-2856en_HK
dc.identifier.issn0271-4310en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143400-
dc.description.abstractWe develop a new method based on the high-frequency electromagnetic (EM)-semiconductor coupled simulation to analyze the impact of multi-type process variations happen around semi-conductormetal structure. It is competent to simultaneously handle geometrical variations like surface roughness and material variations like semi-conductor doping profile, which are difficult for traditional stand alone simulation methods. A sparse grid based stochastic spectral collocation method (SSCM) combined with principle factor analysis (PFA) is implemented to accelerate the stochastic simulation. Numerical results confirm the validity and significance of our variational coupled simulation framework. © 2011 IEEE.en_HK
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000089-
dc.relation.ispartofProceedings - IEEE International Symposium on Circuits and Systemsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsIEEE International Symposium on Circuits and Systems Proceedings. Copyright © IEEE.-
dc.rights©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectCoupled simulation-
dc.subjectDoping profiles-
dc.subjectGeometrical variations-
dc.subjectHigh frequency (HF)-
dc.subjectMaterial variation-
dc.titleProcess-variation-aware electromagnetic-semiconductor coupled simulationen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0271-4302&volume=&spage=2853&epage=2856&date=2011&atitle=Process-variation-aware+electromagnetic-semiconductor+coupled+simulationen_US
dc.identifier.emailChen, Q: q1chen@hku.hken_HK
dc.identifier.emailJiang, L: jianglj@hku.hken_HK
dc.identifier.emailWong, N: nwong@eee.hku.hken_HK
dc.identifier.authorityChen, Q=rp01688en_HK
dc.identifier.authorityJiang, L=rp01338en_HK
dc.identifier.authorityWong, N=rp00190en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/ISCAS.2011.5938200en_HK
dc.identifier.scopuseid_2-s2.0-79960866257en_HK
dc.identifier.hkuros197688en_US
dc.identifier.hkuros192314-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79960866257&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage2853en_HK
dc.identifier.epage2856en_HK
dc.description.otherThe 2011 IEEE International Symposium on Circuits and Systems (ISCAS), Rio de Janeiro, Brazil, 15-18 May 2011. In Proceedings of ISCAS, 2011, p. 2853-2856-
dc.identifier.scopusauthoridXu, Y=44662080000en_HK
dc.identifier.scopusauthoridChen, Q=18133382800en_HK
dc.identifier.scopusauthoridJiang, L=36077777200en_HK
dc.identifier.scopusauthoridWong, N=35235551600en_HK

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