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Article: Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation

TitleElectronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
Authors
KeywordsElectron spins
Electronic band structure
Excitation lasers
Excitation wavelength
Inas/gaas quantum dots
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 110 n. 5 How to Cite?
AbstractElectronic band structures and spin states of the InAs/GaAs quantum dots (QDs) induced by the wetting-layer fluctuation were investigated by employing the technique of time-resolved Kerr rotation (TRKR) with and without magnetic field. Sign change of the Kerr rotation signal was unambiguously observed when only the wavelength of the pump/probe light was scanned. By carefully examining the dependence of TRKR signal on the excitation wavelength and magnetic field as well as photoluminescence and reflectance spectra, the physical origin causing the sign change of the Kerr signal is uncovered. It is due to the resonant excitations of electrons with opposite spin orientations at heavy- (hh) and light-hole (lh) subbands, respectively, since there is a large enough energy separation in QDs for the excitation laser pulses. This measurement also leads to a precise determination of the energy separation between the hh and lh subbands near k 0 point in the dots. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143388
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNing, JQen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorRuan, XZen_HK
dc.contributor.authorJi, Yen_HK
dc.contributor.authorZheng, HZen_HK
dc.contributor.authorSheng, WDen_HK
dc.contributor.authorLiu, HCen_HK
dc.date.accessioned2011-11-24T10:04:48Z-
dc.date.available2011-11-24T10:04:48Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 5en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143388-
dc.description.abstractElectronic band structures and spin states of the InAs/GaAs quantum dots (QDs) induced by the wetting-layer fluctuation were investigated by employing the technique of time-resolved Kerr rotation (TRKR) with and without magnetic field. Sign change of the Kerr rotation signal was unambiguously observed when only the wavelength of the pump/probe light was scanned. By carefully examining the dependence of TRKR signal on the excitation wavelength and magnetic field as well as photoluminescence and reflectance spectra, the physical origin causing the sign change of the Kerr signal is uncovered. It is due to the resonant excitations of electrons with opposite spin orientations at heavy- (hh) and light-hole (lh) subbands, respectively, since there is a large enough energy separation in QDs for the excitation laser pulses. This measurement also leads to a precise determination of the energy separation between the hh and lh subbands near k 0 point in the dots. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 5, article no. 054320) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i5/p054320_s1).en_US
dc.subjectElectron spins-
dc.subjectElectronic band structure-
dc.subjectExcitation lasers-
dc.subjectExcitation wavelength-
dc.subjectInas/gaas quantum dots-
dc.titleElectronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuationen_HK
dc.typeArticleen_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3633508en_HK
dc.identifier.scopuseid_2-s2.0-80052942197en_HK
dc.identifier.hkuros197781en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80052942197&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue5en_HK
dc.identifier.isiWOS:000294968600131-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridRuan, XZ=16424865700en_HK
dc.identifier.scopusauthoridJi, Y=35210173300en_HK
dc.identifier.scopusauthoridZheng, HZ=7403440708en_HK
dc.identifier.scopusauthoridSheng, WD=7103378686en_HK
dc.identifier.scopusauthoridLiu, HC=50162080800en_HK

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