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Article: Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films

TitleTemperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films
Authors
KeywordsMetal insulator semiconductor structures
Nanocomposite thin films
Radio frequency sputtering
Si substrates
Temperature dependence of current
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 110 n. 9 How to Cite?
Abstract
In this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143386
ISSN
2013 Impact Factor: 2.185
ISI Accession Number ID
Funding AgencyGrant Number
NSFC60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No. 60806040, the Fundamental Research Funds for the Central Universities under project No. ZYGX2009X006, the Young Scholar Fund of Sichuan under project No. 2011JQ0002 and the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

References

 

Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-11-24T10:04:45Z-
dc.date.available2011-11-24T10:04:45Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 9en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143386-
dc.description.abstractIn this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 096108) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p096108_s1).en_US
dc.subjectMetal insulator semiconductor structures-
dc.subjectNanocomposite thin films-
dc.subjectRadio frequency sputtering-
dc.subjectSi substrates-
dc.subjectTemperature dependence of current-
dc.titleTemperature dependence of current transport in Al/Al 2O 3 nanocomposite thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=110&spage=096108: 1&epage=3&date=2011&atitle=Temperature+dependence+of+current+transport+in+Al/Al2O3+nanocomposite+thin+filmsen_US
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3663313en_HK
dc.identifier.scopuseid_2-s2.0-81355132265en_HK
dc.identifier.hkuros197777en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-81355132265&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000297062100145-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36063269800en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridLiu, Z=54415907000en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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