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Article: Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films
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TitleTemperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films
 
AuthorsLiu, Y2
Chen, TP3
Ding, L3
Yang, M3
Liu, Z3
Wong, JI3
Fung, S1
 
KeywordsMetal insulator semiconductor structures
Nanocomposite thin films
Radio frequency sputtering
Si substrates
Temperature dependence of current
 
Issue Date2011
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2011, v. 110 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3663313
 
AbstractIn this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.
 
ISSN0021-8979
2013 Impact Factor: 2.185
 
DOIhttp://dx.doi.org/10.1063/1.3663313
 
ISI Accession Number IDWOS:000297062100145
Funding AgencyGrant Number
NSFC60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No. 60806040, the Fundamental Research Funds for the Central Universities under project No. ZYGX2009X006, the Young Scholar Fund of Sichuan under project No. 2011JQ0002 and the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLiu, Y
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorYang, M
 
dc.contributor.authorLiu, Z
 
dc.contributor.authorWong, JI
 
dc.contributor.authorFung, S
 
dc.date.accessioned2011-11-24T10:04:45Z
 
dc.date.available2011-11-24T10:04:45Z
 
dc.date.issued2011
 
dc.description.abstractIn this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3663313
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3663313
 
dc.identifier.hkuros197777
 
dc.identifier.isiWOS:000297062100145
Funding AgencyGrant Number
NSFC60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No. 60806040, the Fundamental Research Funds for the Central Universities under project No. ZYGX2009X006, the Young Scholar Fund of Sichuan under project No. 2011JQ0002 and the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

 
dc.identifier.issn0021-8979
2013 Impact Factor: 2.185
 
dc.identifier.issue9
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-81355132265
 
dc.identifier.urihttp://hdl.handle.net/10722/143386
 
dc.identifier.volume110
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 096108) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p096108_s1).
 
dc.subjectMetal insulator semiconductor structures
 
dc.subjectNanocomposite thin films
 
dc.subjectRadio frequency sputtering
 
dc.subjectSi substrates
 
dc.subjectTemperature dependence of current
 
dc.titleTemperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Liu, Y</contributor.author>
<contributor.author>Chen, TP</contributor.author>
<contributor.author>Ding, L</contributor.author>
<contributor.author>Yang, M</contributor.author>
<contributor.author>Liu, Z</contributor.author>
<contributor.author>Wong, JI</contributor.author>
<contributor.author>Fung, S</contributor.author>
<date.accessioned>2011-11-24T10:04:45Z</date.accessioned>
<date.available>2011-11-24T10:04:45Z</date.available>
<date.issued>2011</date.issued>
<identifier.citation>Journal Of Applied Physics, 2011, v. 110 n. 9</identifier.citation>
<identifier.issn>0021-8979</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/143386</identifier.uri>
<description.abstract>In this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. &#169; 2011 American Institute of Physics.</description.abstract>
<language>eng</language>
<publisher>American Institute of Physics. The Journal&apos;s web site is located at http://jap.aip.org/jap/staff.jsp</publisher>
<relation.ispartof>Journal of Applied Physics</relation.ispartof>
<rights>Creative Commons: Attribution 3.0 Hong Kong License</rights>
<rights>Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 096108) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p096108_s1).</rights>
<subject>Metal insulator semiconductor structures</subject>
<subject>Nanocomposite thin films</subject>
<subject>Radio frequency sputtering</subject>
<subject>Si substrates</subject>
<subject>Temperature dependence of current</subject>
<title>Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0021-8979&amp;volume=110&amp;spage=096108: 1&amp;epage=3&amp;date=2011&amp;atitle=Temperature+dependence+of+current+transport+in+Al/Al2O3+nanocomposite+thin+films</identifier.openurl>
<description.nature>published_or_final_version</description.nature>
<identifier.doi>10.1063/1.3663313</identifier.doi>
<identifier.scopus>eid_2-s2.0-81355132265</identifier.scopus>
<identifier.hkuros>197777</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-81355132265&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>110</identifier.volume>
<identifier.issue>9</identifier.issue>
<identifier.isi>WOS:000297062100145</identifier.isi>
<publisher.place>United States</publisher.place>
<bitstream.url>http://hub.hku.hk/bitstream/10722/143386/1/content.pdf</bitstream.url>
</item>
Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University