Article: Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films

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TitleTemperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films
AuthorsLiu, Y2
Chen, TP3
Ding, L3
Yang, M3
Liu, Z3
Wong, JI3
Fung, S1
KeywordsMetal insulator semiconductor structures
Nanocomposite thin films
Radio frequency sputtering
Si substrates
Temperature dependence of current
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
CitationJournal Of Applied Physics, 2011, v. 110 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3663313
AbstractIn this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.
ISSN0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
DOIhttp://dx.doi.org/10.1063/1.3663313
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorLiu, Y
dc.contributor.authorChen, TP
dc.contributor.authorDing, L
dc.contributor.authorYang, M
dc.contributor.authorLiu, Z
dc.contributor.authorWong, JI
dc.contributor.authorFung, S
dc.date.accessioned2011-11-24T10:04:45Z
dc.date.available2011-11-24T10:04:45Z
dc.date.issued2011
dc.description.abstractIn this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.
dc.description.naturepublished_or_final_version
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3663313
dc.identifier.doihttp://dx.doi.org/10.1063/1.3663313
dc.identifier.hkuros197777
dc.identifier.isiWOS:000297062100145
Funding AgencyGrant Number
NSFC60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No. 60806040, the Fundamental Research Funds for the Central Universities under project No. ZYGX2009X006, the Young Scholar Fund of Sichuan under project No. 2011JQ0002 and the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

dc.identifier.issn0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
dc.identifier.issue9
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-81355132265
dc.identifier.urihttp://hdl.handle.net/10722/143386
dc.identifier.volume110
dc.languageeng
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
dc.publisher.placeUnited States
dc.relation.ispartofJournal of Applied Physics
dc.relation.referencesReferences in Scopus
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 096108) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p096108_s1).
dc.subjectMetal insulator semiconductor structures
dc.subjectNanocomposite thin films
dc.subjectRadio frequency sputtering
dc.subjectSi substrates
dc.subjectTemperature dependence of current
dc.titleTemperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University