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Article: Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film

TitleSelf-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film
Authors
Liu, YChen, TPLiu, ZYu, YFYu, QLi, PFung, S
KeywordsElectrical pulse
High-resistance state
Human brain
Learning abilities
Low-resistance state
Issue Date2011
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2011, v. 105 n. 4, p. 855-860 How to Cite?
DOI: http://dx.doi.org/10.1007/s00339-011-6605-8
AbstractThe resistive switching device based on a Ni-rich nickel oxide thin film exhibits an inherent learning ability of a neural network. The device has the short-term-memory and long-term-memory functions analogous to those of the human brain, depending on the history of its experience of voltage pulsing or sweeping. Neuroplasticity could be realized with the device, as the device can be switched from a high-resistance state to a low-resistance state due to the formation of stable filaments by a series of electrical pulses, resembling the changes such as the growth of new connections and the creation of new neurons in the brain in response to experience. © 2011 Springer-Verlag.
Persistent Identifierhttp://hdl.handle.net/10722/143385
ISSN
0947-8396
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.446
ISI Accession Number ID
WOS:000297162000010
Funding AgencyGrant Number
NSFC60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No. 60806040, the Fundamental Research Funds for the Central Universities under project No. ZYGX2009X006, the Young Scholar Fund of Sichuan under project No. 2011JQ0002 and the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorYu, YFen_HK
dc.contributor.authorYu, Qen_HK
dc.contributor.authorLi, Pen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-11-24T10:04:45Z-
dc.date.available2011-11-24T10:04:45Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2011, v. 105 n. 4, p. 855-860en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143385-
dc.description.abstractThe resistive switching device based on a Ni-rich nickel oxide thin film exhibits an inherent learning ability of a neural network. The device has the short-term-memory and long-term-memory functions analogous to those of the human brain, depending on the history of its experience of voltage pulsing or sweeping. Neuroplasticity could be realized with the device, as the device can be switched from a high-resistance state to a low-resistance state due to the formation of stable filaments by a series of electrical pulses, resembling the changes such as the growth of new connections and the creation of new neurons in the brain in response to experience. © 2011 Springer-Verlag.en_HK
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.rightsThe original publication is available at www.springerlink.comen_US
dc.subjectElectrical pulse-
dc.subjectHigh-resistance state-
dc.subjectHuman brain-
dc.subjectLearning abilities-
dc.subjectLow-resistance state-
dc.titleSelf-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin filmen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-011-6605-8en_HK
dc.identifier.scopuseid_2-s2.0-83555172303en_HK
dc.identifier.hkuros197776en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-83555172303&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume105en_HK
dc.identifier.issue4en_HK
dc.identifier.spage855en_HK
dc.identifier.epage860en_HK
dc.identifier.isiWOS:000297162000010-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLiu, Y=36063269800en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Z=36062911700en_HK
dc.identifier.scopusauthoridYu, YF=8723751600en_HK
dc.identifier.scopusauthoridYu, Q=7402947741en_HK
dc.identifier.scopusauthoridLi, P=35069715100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.citeulike9812508-
dc.identifier.issnl0947-8396-

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