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Article: Modulation of metal-insulator transitions in La0.8Ca0.2MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures by electric fields

TitleModulation of metal-insulator transitions in La0.8Ca0.2MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures by electric fields
Authors
Issue Date2011
PublisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
Citation
Europhysics Letters, 2011, v. 95 n. 5, article no. 57001 How to Cite?
AbstractWe have deposited La0.8Ca0.2MnO3 (LCMO) thin films onto a 0.7Pb(Mg1/3Nb2/3)O3-0. 3PbTiO3 (PMN-PT) single-crystal substrate to construct field effect devices and investigated the electric-field-induced strain and polarization effects on the structure, magnetic, and transport properties of LCMO films. LCMO not only exhibits the usual insulator-metal transition associated with the onset of ferromagnetic state, but also a lower-temperature metal-insulator transition due to charge/orbital order. Especially, the latter transition can be modulated reversely and continuously by electric fields, leading to a large electroresistance in LCMO films (ΔR/R(0) of ∼70% at 50 K). Such phenomenon could be explained based on the coactions of the piezoelectric effect and the ferroelectric-field polarization effect, which could ultimately tailor the strain and density of charge carriers in LCMO films. © 2011 Europhysics Letters Association.
Persistent Identifierhttp://hdl.handle.net/10722/143382
ISSN
2015 Impact Factor: 1.963
2015 SCImago Journal Rankings: 0.565
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU702409P
Natural Science Foundation of Tianjin11JCZDJC21800
Research Foundation of Tianjin Education Council20090308
Funding Information:

This work was supported by the Research Grant Council of Hong Kong (Project No. HKU702409P). SYW would like to thank the financial support from the Natural Science Foundation of Tianjin (11JCZDJC21800) and the Research Foundation of Tianjin Education Council (20090308).

 

DC FieldValueLanguage
dc.contributor.authorWang, SYen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2011-11-24T10:04:43Z-
dc.date.available2011-11-24T10:04:43Z-
dc.date.issued2011en_US
dc.identifier.citationEurophysics Letters, 2011, v. 95 n. 5, article no. 57001en_US
dc.identifier.issn0295-5075en_US
dc.identifier.urihttp://hdl.handle.net/10722/143382-
dc.description.abstractWe have deposited La0.8Ca0.2MnO3 (LCMO) thin films onto a 0.7Pb(Mg1/3Nb2/3)O3-0. 3PbTiO3 (PMN-PT) single-crystal substrate to construct field effect devices and investigated the electric-field-induced strain and polarization effects on the structure, magnetic, and transport properties of LCMO films. LCMO not only exhibits the usual insulator-metal transition associated with the onset of ferromagnetic state, but also a lower-temperature metal-insulator transition due to charge/orbital order. Especially, the latter transition can be modulated reversely and continuously by electric fields, leading to a large electroresistance in LCMO films (ΔR/R(0) of ∼70% at 50 K). Such phenomenon could be explained based on the coactions of the piezoelectric effect and the ferroelectric-field polarization effect, which could ultimately tailor the strain and density of charge carriers in LCMO films. © 2011 Europhysics Letters Association.-
dc.languageengen_US
dc.publisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075en_US
dc.relation.ispartofEurophysics Lettersen_US
dc.rightsEurophysics Letters. Copyright © Institute of Physics Publishing Ltd..en_US
dc.titleModulation of metal-insulator transitions in La0.8Ca0.2MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures by electric fieldsen_US
dc.typeArticleen_US
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0295-5075&volume=95&issue=5&spage=57001:1&epage=57001:5&date=2011&atitle=Modulation+of+metal-insulator+transitions+in+La0.8Ca0.2MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3+heterostructures+by+electric+fieldsen_US
dc.identifier.emailWang, SY: sywang26@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1209/0295-5075/95/57001-
dc.identifier.scopuseid_2-s2.0-80052324557-
dc.identifier.hkuros197741en_US
dc.identifier.volume95en_US
dc.identifier.issue5, article no. 57001en_US
dc.identifier.isiWOS:000294325500025-

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