File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1016/j.ssc.2011.05.034
- Scopus: eid_2-s2.0-79961170950
- WOS: WOS:000295236400021
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Current induced metastable states and abnormal electroresistance effect in epitaxial thin films of La0.8Ca0.2MnO3
Title | Current induced metastable states and abnormal electroresistance effect in epitaxial thin films of La0.8Ca0.2MnO3 | ||||||
---|---|---|---|---|---|---|---|
Authors | |||||||
Keywords | C. metastable states Electroresistance Meta-stable state Epitaxial films Manganese oxide | ||||||
Issue Date | 2011 | ||||||
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc | ||||||
Citation | Solid State Communications, 2011, v. 151 n. 18, p. 1293-1295 How to Cite? | ||||||
Abstract | By applying an electric current to La0.8Ca0.2MnO3 films at 20 K, a high-resistive state is excited near the Curie point. Such a current induced metastable state turns out to be extremely sensitive to weak measuring currents. When the measuring current changes from 1 to 20 μA, the peak resistance near the metal–insulator transition temperature is reduced from 366 to , showing a remarkably enhanced electroresistance effect (ER=[R(0)−R(I)]/R(0)=70%). Also, in contrast to the previous reports, the metal–insulator transition shifts to a higher temperature. Our experiments show that the high-resistive state is metastable and cannot be removed by reversing the current direction. These behaviors yield a possibility to modulate the metal–insulator phase transition by using electric currents. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/142478 | ||||||
ISSN | 2023 Impact Factor: 2.1 2023 SCImago Journal Rankings: 0.414 | ||||||
ISI Accession Number ID |
Funding Information: This work has been supported by the Research Grant Council of Hong Kong (Project No. HKU7024/09P) and the University Research Committee of HKU. |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, LP | en_US |
dc.contributor.author | Gao, J | en_US |
dc.date.accessioned | 2011-10-28T02:46:51Z | - |
dc.date.available | 2011-10-28T02:46:51Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.citation | Solid State Communications, 2011, v. 151 n. 18, p. 1293-1295 | en_US |
dc.identifier.issn | 0038-1098 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/142478 | - |
dc.description.abstract | By applying an electric current to La0.8Ca0.2MnO3 films at 20 K, a high-resistive state is excited near the Curie point. Such a current induced metastable state turns out to be extremely sensitive to weak measuring currents. When the measuring current changes from 1 to 20 μA, the peak resistance near the metal–insulator transition temperature is reduced from 366 to , showing a remarkably enhanced electroresistance effect (ER=[R(0)−R(I)]/R(0)=70%). Also, in contrast to the previous reports, the metal–insulator transition shifts to a higher temperature. Our experiments show that the high-resistive state is metastable and cannot be removed by reversing the current direction. These behaviors yield a possibility to modulate the metal–insulator phase transition by using electric currents. | en_US |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc | en_US |
dc.relation.ispartof | Solid State Communications | en_US |
dc.subject | C. metastable states | - |
dc.subject | Electroresistance | - |
dc.subject | Meta-stable state | - |
dc.subject | Epitaxial films | - |
dc.subject | Manganese oxide | - |
dc.title | Current induced metastable states and abnormal electroresistance effect in epitaxial thin films of La0.8Ca0.2MnO3 | en_US |
dc.type | Article | en_US |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1098&volume=151&issue=18&spage=1293&epage=1295&date=2011&atitle=Current+induced+metastable+states+and+abnormal+electroresistance+effect+in++epitaxial+thin+films+of+La0.8Ca0.2MnO3 | en_US |
dc.identifier.email | Gao, J: jugao@hku.hk | en_US |
dc.identifier.authority | Gao, J=rp00699 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.ssc.2011.05.034 | - |
dc.identifier.scopus | eid_2-s2.0-79961170950 | - |
dc.identifier.hkuros | 196808 | en_US |
dc.identifier.volume | 151 | en_US |
dc.identifier.issue | 18 | en_US |
dc.identifier.spage | 1293 | en_US |
dc.identifier.epage | 1295 | en_US |
dc.identifier.isi | WOS:000295236400021 | - |
dc.identifier.issnl | 0038-1098 | - |