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Conference Paper: Positron annihilation study of defects in electron-irradiated single crystal zinc oxide
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TitlePositron annihilation study of defects in electron-irradiated single crystal zinc oxide
 
AuthorsTo, CK1
Yang, B1
Beling, CD1
Fung, S1
Ling, CC1
Gong, M2
 
Keywords2-mev electron
Doppler broadening spectroscopy
Fluences
Isochronal annealing
Positron trapping
 
Issue Date2011
 
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/conf
 
CitationJournal Of Physics: Conference Series, 2011, v. 262 n. 1 [How to Cite?]
DOI: http://dx.doi.org/10.1088/1742-6596/262/1/012059
 
AbstractPressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6×10 17cm -2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600°C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.
 
Description12th International Workshop on Slow Positron Beam Techniques for Solids, Surfaces, Atoms and Molecules (SLOPOS12), Magnetic Island, QLD, 1 August 2010 through 6 August 2010
 
ISSN1742-6588
2013 SCImago Journal Rankings: 0.191
 
DOIhttp://dx.doi.org/10.1088/1742-6596/262/1/012059
 
ISI Accession Number IDWOS:000292990500059
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorTo, CK
 
dc.contributor.authorYang, B
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorFung, S
 
dc.contributor.authorLing, CC
 
dc.contributor.authorGong, M
 
dc.date.accessioned2011-10-28T02:46:44Z
 
dc.date.available2011-10-28T02:46:44Z
 
dc.date.issued2011
 
dc.description.abstractPressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6×10 17cm -2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600°C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.description12th International Workshop on Slow Positron Beam Techniques for Solids, Surfaces, Atoms and Molecules (SLOPOS12), Magnetic Island, QLD, 1 August 2010 through 6 August 2010
 
dc.identifier.citationJournal Of Physics: Conference Series, 2011, v. 262 n. 1 [How to Cite?]
DOI: http://dx.doi.org/10.1088/1742-6596/262/1/012059
 
dc.identifier.citeulike8682985
 
dc.identifier.doihttp://dx.doi.org/10.1088/1742-6596/262/1/012059
 
dc.identifier.hkuros184569
 
dc.identifier.isiWOS:000292990500059
 
dc.identifier.issn1742-6588
2013 SCImago Journal Rankings: 0.191
 
dc.identifier.issue1
 
dc.identifier.scopuseid_2-s2.0-79952180724
 
dc.identifier.urihttp://hdl.handle.net/10722/142464
 
dc.identifier.volume262
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/conf
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofJournal of Physics: Conference Series
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of Physics: Conference Series. Copyright © Institute of Physics Publishing.
 
dc.subject2-mev electron
 
dc.subjectDoppler broadening spectroscopy
 
dc.subjectFluences
 
dc.subjectIsochronal annealing
 
dc.subjectPositron trapping
 
dc.titlePositron annihilation study of defects in electron-irradiated single crystal zinc oxide
 
dc.typeConference_Paper
 
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<contributor.author>Beling, CD</contributor.author>
<contributor.author>Fung, S</contributor.author>
<contributor.author>Ling, CC</contributor.author>
<contributor.author>Gong, M</contributor.author>
<date.accessioned>2011-10-28T02:46:44Z</date.accessioned>
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<description.abstract>Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6&#215;10 17cm -2. Isochronal annealing from 100&#176;C-800&#176;C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300&#176;C and 600&#176;C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300&#176;C and 600&#176;C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300&#176;C and 700&#176;C.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Sichuan University