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Conference Paper: Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

TitlePositron annihilation study of defects in electron-irradiated single crystal zinc oxide
Authors
Keywords2-mev electron
Doppler broadening spectroscopy
Fluences
Isochronal annealing
Positron trapping
Issue Date2011
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/conf
Citation
Journal Of Physics: Conference Series, 2011, v. 262 n. 1 How to Cite?
AbstractPressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6×10 17cm -2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600°C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.
Description12th International Workshop on Slow Positron Beam Techniques for Solids, Surfaces, Atoms and Molecules (SLOPOS12), Magnetic Island, QLD, 1 August 2010 through 6 August 2010
Persistent Identifierhttp://hdl.handle.net/10722/142464
ISSN
2014 SCImago Journal Rankings: 0.217
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorTo, CKen_HK
dc.contributor.authorYang, Ben_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2011-10-28T02:46:44Z-
dc.date.available2011-10-28T02:46:44Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Physics: Conference Series, 2011, v. 262 n. 1en_HK
dc.identifier.issn1742-6588en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142464-
dc.description12th International Workshop on Slow Positron Beam Techniques for Solids, Surfaces, Atoms and Molecules (SLOPOS12), Magnetic Island, QLD, 1 August 2010 through 6 August 2010-
dc.description.abstractPressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6×10 17cm -2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600°C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/confen_HK
dc.relation.ispartofJournal of Physics: Conference Seriesen_HK
dc.rightsJournal of Physics: Conference Series. Copyright © Institute of Physics Publishing.-
dc.subject2-mev electron-
dc.subjectDoppler broadening spectroscopy-
dc.subjectFluences-
dc.subjectIsochronal annealing-
dc.subjectPositron trapping-
dc.titlePositron annihilation study of defects in electron-irradiated single crystal zinc oxideen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1742-6596/262/1/012059en_HK
dc.identifier.scopuseid_2-s2.0-79952180724en_HK
dc.identifier.hkuros184569en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952180724&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume262en_HK
dc.identifier.issue1en_HK
dc.identifier.isiWOS:000292990500059-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridTo, CK=35114056600en_HK
dc.identifier.scopusauthoridYang, B=55416326500en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.citeulike8682985-

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