Article: Growth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strain
File Download
Links for fulltext
(May Require Subscription)
(May Require Subscription)
- Publisher Website: 10.1063/1.3548865
- Scopus: eid_2-s2.0-79551615584
- Find via
Supplementary
-
Citations:
-
Appears in Collections:
| Title | Growth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strain | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Li, HD1 2 Wang, ZY1 Guo, X1 Wong, TL3 Wang, N3 Xie, MH1 | ||||||
| Keywords | Growth modes Heteroepitaxial Interface formation Morphological properties Relaxation rates | ||||||
| Issue Date | 2011 | ||||||
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
| Citation | Applied Physics Letters, 2011, v. 98 n. 4 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3548865 | ||||||
| Abstract | Multilayers of Bi 2Se 3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi 2Se 3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi 2Se 3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi 2Se 3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi 2Se 3, which could be attributed to the specific growth modes and the properties of Bi 2Se 3 and ZnSe surfaces. © 2011 American Institute of Physics. | ||||||
| ISSN | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||
| DOI | http://dx.doi.org/10.1063/1.3548865 | ||||||
| ISI Accession Number ID | WOS:000286676600044
Funding Information: The authors wish to acknowledge the technical support from W. K. Ho and S.Y. Chui in the growth and XRD experiments, respectively. The project is financially supported by a General Research Fund (Grant No. HKU 7061/10P) and a Collaborative Research Fund (Grant No. HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region (HKSAR), as well as a Seed Fund for Basic Research from HKU. | ||||||
| References | References in Scopus |
| dc.contributor.author | Li, HD | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Wang, ZY | ||||||
| dc.contributor.author | Guo, X | ||||||
| dc.contributor.author | Wong, TL | ||||||
| dc.contributor.author | Wang, N | ||||||
| dc.contributor.author | Xie, MH | ||||||
| dc.date.accessioned | 2011-10-28T02:46:43Z | ||||||
| dc.date.available | 2011-10-28T02:46:43Z | ||||||
| dc.date.issued | 2011 | ||||||
| dc.description.abstract | Multilayers of Bi 2Se 3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi 2Se 3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi 2Se 3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi 2Se 3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi 2Se 3, which could be attributed to the specific growth modes and the properties of Bi 2Se 3 and ZnSe surfaces. © 2011 American Institute of Physics. | ||||||
| dc.description.nature | published_or_final_version | ||||||
| dc.identifier.citation | Applied Physics Letters, 2011, v. 98 n. 4 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3548865 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3548865 | ||||||
| dc.identifier.hkuros | 184561 | ||||||
| dc.identifier.isi | WOS:000286676600044
Funding Information: The authors wish to acknowledge the technical support from W. K. Ho and S.Y. Chui in the growth and XRD experiments, respectively. The project is financially supported by a General Research Fund (Grant No. HKU 7061/10P) and a Collaborative Research Fund (Grant No. HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region (HKSAR), as well as a Seed Fund for Basic Research from HKU. | ||||||
| dc.identifier.issn | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||
| dc.identifier.issue | 4 | ||||||
| dc.identifier.openurl | | ||||||
| dc.identifier.scopus | eid_2-s2.0-79551615584 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/142461 | ||||||
| dc.identifier.volume | 98 | ||||||
| dc.language | eng | ||||||
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
| dc.publisher.place | United States | ||||||
| dc.relation.ispartof | Applied Physics Letters | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.rights | Applied Physics Letters. Copyright © American Institute of Physics. | ||||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||||
| dc.rights | After publication: Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2011, v. 98 n. 4, article no. 043104) and may be found at (http://apl.aip.org/resource/1/applab/v98/i4/p043104_s1). | ||||||
| dc.subject | Growth modes | ||||||
| dc.subject | Heteroepitaxial | ||||||
| dc.subject | Interface formation | ||||||
| dc.subject | Morphological properties | ||||||
| dc.subject | Relaxation rates | ||||||
| dc.title | Growth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strain | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Beijing Jiaotong Daxue
- Hong Kong University of Science and Technology