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Article: Growth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strain
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TitleGrowth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strain
 
AuthorsLi, HD1 2
Wang, ZY1
Guo, X1
Wong, TL3
Wang, N3
Xie, MH1
 
KeywordsGrowth modes
Heteroepitaxial
Interface formation
Morphological properties
Relaxation rates
 
Issue Date2011
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2011, v. 98 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3548865
 
AbstractMultilayers of Bi 2Se 3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi 2Se 3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi 2Se 3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi 2Se 3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi 2Se 3, which could be attributed to the specific growth modes and the properties of Bi 2Se 3 and ZnSe surfaces. © 2011 American Institute of Physics.
 
ISSN0003-6951
2013 Impact Factor: 3.515
 
DOIhttp://dx.doi.org/10.1063/1.3548865
 
ISI Accession Number IDWOS:000286676600044
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative Region (HKSAR)HKU 7061/10P
HKU 10/CRF/08
HKU
Funding Information:

The authors wish to acknowledge the technical support from W. K. Ho and S.Y. Chui in the growth and XRD experiments, respectively. The project is financially supported by a General Research Fund (Grant No. HKU 7061/10P) and a Collaborative Research Fund (Grant No. HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region (HKSAR), as well as a Seed Fund for Basic Research from HKU.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLi, HD
 
dc.contributor.authorWang, ZY
 
dc.contributor.authorGuo, X
 
dc.contributor.authorWong, TL
 
dc.contributor.authorWang, N
 
dc.contributor.authorXie, MH
 
dc.date.accessioned2011-10-28T02:46:43Z
 
dc.date.available2011-10-28T02:46:43Z
 
dc.date.issued2011
 
dc.description.abstractMultilayers of Bi 2Se 3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi 2Se 3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi 2Se 3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi 2Se 3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi 2Se 3, which could be attributed to the specific growth modes and the properties of Bi 2Se 3 and ZnSe surfaces. © 2011 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationApplied Physics Letters, 2011, v. 98 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3548865
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3548865
 
dc.identifier.eissn1077-3118
 
dc.identifier.hkuros184561
 
dc.identifier.isiWOS:000286676600044
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative Region (HKSAR)HKU 7061/10P
HKU 10/CRF/08
HKU
Funding Information:

The authors wish to acknowledge the technical support from W. K. Ho and S.Y. Chui in the growth and XRD experiments, respectively. The project is financially supported by a General Research Fund (Grant No. HKU 7061/10P) and a Collaborative Research Fund (Grant No. HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region (HKSAR), as well as a Seed Fund for Basic Research from HKU.

 
dc.identifier.issn0003-6951
2013 Impact Factor: 3.515
 
dc.identifier.issue4
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-79551615584
 
dc.identifier.urihttp://hdl.handle.net/10722/142461
 
dc.identifier.volume98
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.rightsAfter publication: Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2011, v. 98 n. 4, article no. 043104) and may be found at (http://apl.aip.org/resource/1/applab/v98/i4/p043104_s1).
 
dc.subjectGrowth modes
 
dc.subjectHeteroepitaxial
 
dc.subjectInterface formation
 
dc.subjectMorphological properties
 
dc.subjectRelaxation rates
 
dc.titleGrowth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strain
 
dc.typeArticle
 
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<description.abstract>Multilayers of Bi 2Se 3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi 2Se 3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi 2Se 3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi 2Se 3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi 2Se 3, which could be attributed to the specific growth modes and the properties of Bi 2Se 3 and ZnSe surfaces. &#169; 2011 American Institute of Physics.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Beijing Jiaotong Daxue
  3. Hong Kong University of Science and Technology