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Article: Growth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strain

TitleGrowth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strain
Authors
Li, HDWang, ZYGuo, XWong, TLWang, NXie, MH
KeywordsGrowth modes
Heteroepitaxial
Interface formation
Morphological properties
Relaxation rates
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 98 n. 4, article no. 043104 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3548865
AbstractMultilayers of Bi 2Se 3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi 2Se 3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi 2Se 3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi 2Se 3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi 2Se 3, which could be attributed to the specific growth modes and the properties of Bi 2Se 3 and ZnSe surfaces. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/142461
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000286676600044
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative Region (HKSAR)HKU 7061/10P
HKU 10/CRF/08
HKU
Funding Information:

The authors wish to acknowledge the technical support from W. K. Ho and S.Y. Chui in the growth and XRD experiments, respectively. The project is financially supported by a General Research Fund (Grant No. HKU 7061/10P) and a Collaborative Research Fund (Grant No. HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region (HKSAR), as well as a Seed Fund for Basic Research from HKU.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, HDen_HK
dc.contributor.authorWang, ZYen_HK
dc.contributor.authorGuo, Xen_HK
dc.contributor.authorWong, TLen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2011-10-28T02:46:43Z-
dc.date.available2011-10-28T02:46:43Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics Letters, 2011, v. 98 n. 4, article no. 043104-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142461-
dc.description.abstractMultilayers of Bi 2Se 3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi 2Se 3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi 2Se 3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi 2Se 3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi 2Se 3, which could be attributed to the specific growth modes and the properties of Bi 2Se 3 and ZnSe surfaces. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 98 n. 4, article no. 043104 and may be found at https://doi.org/10.1063/1.3548865-
dc.subjectGrowth modes-
dc.subjectHeteroepitaxial-
dc.subjectInterface formation-
dc.subjectMorphological properties-
dc.subjectRelaxation rates-
dc.titleGrowth of multilayers of Bi 2Se 3/ZnSe: Heteroepitaxial interface formation and strainen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=98&issue=4, article no. 043104&spage=&epage=&date=2011&atitle=Growth+of+multilayers+of+Bi2Se3/ZnSe:+heteroepitaxial+interface+formation+and+strainen_US
dc.identifier.emailLi, HD: hdli1978@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityLi, HD=rp00739en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3548865en_HK
dc.identifier.scopuseid_2-s2.0-79551615584en_HK
dc.identifier.hkuros184561en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79551615584&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume98en_HK
dc.identifier.issue4en_HK
dc.identifier.spagearticle no. 043104-
dc.identifier.epagearticle no. 043104-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000286676600044-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, HD=36441549600en_HK
dc.identifier.scopusauthoridWang, ZY=23978772700en_HK
dc.identifier.scopusauthoridGuo, X=34770102100en_HK
dc.identifier.scopusauthoridWong, TL=26321269800en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.issnl0003-6951-

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