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Article: A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals
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TitleA two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals
 
AuthorsLiu, Y2
Chen, TP3
Ding, L3
Li, YB4
Zhang, S3
Fung, S1
 
KeywordsMemory
Nanocrystal
WORM
 
Issue Date2010
 
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/
 
CitationJournal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 9, p. 5796-5799 [How to Cite?]
DOI: http://dx.doi.org/10.1166/jnn.2010.2440
 
AbstractA switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-AI) when the nc-AI is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-AI. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-AI with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years. © 2010 American.
 
ISSN1533-4880
2013 Impact Factor: 1.339
2013 SCImago Journal Rankings: 0.351
 
DOIhttp://dx.doi.org/10.1166/jnn.2010.2440
 
ISI Accession Number IDWOS:000279836400039
Funding AgencyGrant Number
NSFC60806040
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No.60806040 and the National Research Foundation of Singapore under project No. NRF-G-CRP 2007-01.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLiu, Y
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorLi, YB
 
dc.contributor.authorZhang, S
 
dc.contributor.authorFung, S
 
dc.date.accessioned2011-10-28T02:46:40Z
 
dc.date.available2011-10-28T02:46:40Z
 
dc.date.issued2010
 
dc.description.abstractA switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-AI) when the nc-AI is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-AI. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-AI with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years. © 2010 American.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationJournal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 9, p. 5796-5799 [How to Cite?]
DOI: http://dx.doi.org/10.1166/jnn.2010.2440
 
dc.identifier.doihttp://dx.doi.org/10.1166/jnn.2010.2440
 
dc.identifier.epage5799
 
dc.identifier.hkuros184559
 
dc.identifier.isiWOS:000279836400039
Funding AgencyGrant Number
NSFC60806040
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No.60806040 and the National Research Foundation of Singapore under project No. NRF-G-CRP 2007-01.

 
dc.identifier.issn1533-4880
2013 Impact Factor: 1.339
2013 SCImago Journal Rankings: 0.351
 
dc.identifier.issue9
 
dc.identifier.pmid21133107
 
dc.identifier.scopuseid_2-s2.0-79952726380
 
dc.identifier.spage5796
 
dc.identifier.urihttp://hdl.handle.net/10722/142460
 
dc.identifier.volume10
 
dc.languageeng
 
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Nanoscience and Nanotechnology
 
dc.relation.referencesReferences in Scopus
 
dc.subjectMemory
 
dc.subjectNanocrystal
 
dc.subjectWORM
 
dc.titleA two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals
 
dc.typeArticle
 
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<contributor.author>Zhang, S</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
  4. Harbin Institute of Technology