Article: A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals
| Title | A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Liu, Y2 Chen, TP3 Ding, L3 Li, YB4 Zhang, S3 Fung, S1 | ||||||
| Keywords | Memory Nanocrystal WORM | ||||||
| Issue Date | 2010 | ||||||
| Publisher | American Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/ | ||||||
| Citation | Journal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 9, p. 5796-5799 [How to Cite?] DOI: http://dx.doi.org/10.1166/jnn.2010.2440 | ||||||
| Abstract | A switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-AI) when the nc-AI is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-AI. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-AI with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years. © 2010 American. | ||||||
| ISSN | 1533-4880 2011 Impact Factor: 1.563 2011 SCImago Journal Rankings: 0.087 | ||||||
| DOI | http://dx.doi.org/10.1166/jnn.2010.2440 | ||||||
| ISI Accession Number ID | WOS:000279836400039
Funding Information: This work has been financially supported by NSFC under project No.60806040 and the National Research Foundation of Singapore under project No. NRF-G-CRP 2007-01. | ||||||
| References | References in Scopus |
| dc.contributor.author | Liu, Y | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Chen, TP | ||||||
| dc.contributor.author | Ding, L | ||||||
| dc.contributor.author | Li, YB | ||||||
| dc.contributor.author | Zhang, S | ||||||
| dc.contributor.author | Fung, S | ||||||
| dc.date.accessioned | 2011-10-28T02:46:40Z | ||||||
| dc.date.available | 2011-10-28T02:46:40Z | ||||||
| dc.date.issued | 2010 | ||||||
| dc.description.abstract | A switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-AI) when the nc-AI is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-AI. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-AI with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years. © 2010 American. | ||||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||||
| dc.identifier.citation | Journal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 9, p. 5796-5799 [How to Cite?] DOI: http://dx.doi.org/10.1166/jnn.2010.2440 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1166/jnn.2010.2440 | ||||||
| dc.identifier.epage | 5799 | ||||||
| dc.identifier.hkuros | 184559 | ||||||
| dc.identifier.isi | WOS:000279836400039
Funding Information: This work has been financially supported by NSFC under project No.60806040 and the National Research Foundation of Singapore under project No. NRF-G-CRP 2007-01. | ||||||
| dc.identifier.issn | 1533-4880 2011 Impact Factor: 1.563 2011 SCImago Journal Rankings: 0.087 | ||||||
| dc.identifier.issue | 9 | ||||||
| dc.identifier.pmid | 21133107 | ||||||
| dc.identifier.scopus | eid_2-s2.0-79952726380 | ||||||
| dc.identifier.spage | 5796 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/142460 | ||||||
| dc.identifier.volume | 10 | ||||||
| dc.language | eng | ||||||
| dc.publisher | American Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/ | ||||||
| dc.publisher.place | United States | ||||||
| dc.relation.ispartof | Journal of Nanoscience and Nanotechnology | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.subject | Memory | ||||||
| dc.subject | Nanocrystal | ||||||
| dc.subject | WORM | ||||||
| dc.title | A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- University of Electronic Science and Technology of China
- Nanyang Technological University
- Harbin Institute of Technology