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Article: A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals

TitleA two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals
Authors
KeywordsMemory
Nanocrystal
WORM
Issue Date2010
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/
Citation
Journal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 9, p. 5796-5799 How to Cite?
Abstract
A switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-AI) when the nc-AI is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-AI. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-AI with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years. © 2010 American.
Persistent Identifierhttp://hdl.handle.net/10722/142460
ISSN
2013 Impact Factor: 1.339
2013 SCImago Journal Rankings: 0.351
ISI Accession Number ID
Funding AgencyGrant Number
NSFC60806040
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No.60806040 and the National Research Foundation of Singapore under project No. NRF-G-CRP 2007-01.

References

 

Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
  4. Harbin Institute of Technology
DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLi, YBen_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-10-28T02:46:40Z-
dc.date.available2011-10-28T02:46:40Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 9, p. 5796-5799en_HK
dc.identifier.issn1533-4880en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142460-
dc.description.abstractA switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-AI) when the nc-AI is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-AI. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-AI with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years. © 2010 American.en_HK
dc.languageengen_US
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/en_HK
dc.relation.ispartofJournal of Nanoscience and Nanotechnologyen_HK
dc.subjectMemoryen_HK
dc.subjectNanocrystalen_HK
dc.subjectWORMen_HK
dc.titleA two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1166/jnn.2010.2440en_HK
dc.identifier.pmid21133107-
dc.identifier.scopuseid_2-s2.0-79952726380en_HK
dc.identifier.hkuros184559en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952726380&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume10en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5796en_HK
dc.identifier.epage5799en_HK
dc.identifier.isiWOS:000279836400039-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36063639400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLi, YB=19337392800en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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