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Article: Charge storage behaviors of ge nanocrystals embedded in SiO 2 for the application in non-volatile memory devices

TitleCharge storage behaviors of ge nanocrystals embedded in SiO 2 for the application in non-volatile memory devices
Authors
KeywordsGe Nanocrystal
Low-Energy Ion Implantation
Non-Volatile Memory
Issue Date2010
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/
Citation
Journal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 7, p. 4517-4521 How to Cite?
AbstractGe nanocrystals distributed in the SiO 2 of metal-oxide- semiconductor structure are synthesized by low-energy Ge ion implantation with various energies and doses. Their charge storage behaviors are influenced by both the ion implantation dose and energy. The larger flatband voltage shift achieved by increasing either the implantation dose or energy is explained by the locations and concentration of the charge trapping sites. The smaller charge loss achieved by decreasing the implantation dose or increasing the implantation energy is explained by the co-existence of the charge leakage to the gate electrode and the lateral charge loss to the adjacent Ge nanocrystals. © 2010 American Scientific Publishers.
Persistent Identifierhttp://hdl.handle.net/10722/142459
ISSN
2015 Impact Factor: 1.338
2015 SCImago Journal Rankings: 0.358
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, Men_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorTseng, AAen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-10-28T02:46:40Z-
dc.date.available2011-10-28T02:46:40Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 7, p. 4517-4521en_HK
dc.identifier.issn1533-4880en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142459-
dc.description.abstractGe nanocrystals distributed in the SiO 2 of metal-oxide- semiconductor structure are synthesized by low-energy Ge ion implantation with various energies and doses. Their charge storage behaviors are influenced by both the ion implantation dose and energy. The larger flatband voltage shift achieved by increasing either the implantation dose or energy is explained by the locations and concentration of the charge trapping sites. The smaller charge loss achieved by decreasing the implantation dose or increasing the implantation energy is explained by the co-existence of the charge leakage to the gate electrode and the lateral charge loss to the adjacent Ge nanocrystals. © 2010 American Scientific Publishers.en_HK
dc.languageengen_US
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/en_HK
dc.relation.ispartofJournal of Nanoscience and Nanotechnologyen_HK
dc.subjectGe Nanocrystalen_HK
dc.subjectLow-Energy Ion Implantationen_HK
dc.subjectNon-Volatile Memoryen_HK
dc.titleCharge storage behaviors of ge nanocrystals embedded in SiO 2 for the application in non-volatile memory devicesen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1166/jnn.2010.2371en_HK
dc.identifier.pmid21128450-
dc.identifier.scopuseid_2-s2.0-79953662601en_HK
dc.identifier.hkuros184556en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79953662601&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume10en_HK
dc.identifier.issue7en_HK
dc.identifier.spage4517en_HK
dc.identifier.epage4521en_HK
dc.identifier.isiWOS:000277199300062-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridLiu, Y=36063639400en_HK
dc.identifier.scopusauthoridTseng, AA=7102916705en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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