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Article: Mechanism for Cu void defect on various electroplated film conditions

TitleMechanism for Cu void defect on various electroplated film conditions
Authors
Feng, HPCheng, MYWang, YLChang, SCWang, YYWan, CC
KeywordsCopper plating
Copper void
Direct current plating
Electromigration resistance
Issue Date2006
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2006, v. 498 n. 1-2, p. 56-59 How to Cite?
DOI: http://dx.doi.org/10.1016/j.tsf.2005.07.062
AbstractThis study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. © 2005 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/142051
ISSN
0040-6090
2023 Impact Factor: 2.0
2023 SCImago Journal Rankings: 0.400
ISI Accession Number ID
WOS:000235270500011
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorFeng, HPen_HK
dc.contributor.authorCheng, MYen_HK
dc.contributor.authorWang, YLen_HK
dc.contributor.authorChang, SCen_HK
dc.contributor.authorWang, YYen_HK
dc.contributor.authorWan, CCen_HK
dc.date.accessioned2011-10-10T07:13:52Z-
dc.date.available2011-10-10T07:13:52Z-
dc.date.issued2006en_HK
dc.identifier.citationThin Solid Films, 2006, v. 498 n. 1-2, p. 56-59en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142051-
dc.description.abstractThis study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. © 2005 Elsevier B.V. All rights reserved.en_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectCopper platingen_HK
dc.subjectCopper voiden_HK
dc.subjectDirect current platingen_HK
dc.subjectElectromigration resistanceen_HK
dc.titleMechanism for Cu void defect on various electroplated film conditionsen_HK
dc.typeArticleen_HK
dc.identifier.emailFeng, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2005.07.062en_HK
dc.identifier.scopuseid_2-s2.0-30944463813en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-30944463813&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume498en_HK
dc.identifier.issue1-2en_HK
dc.identifier.spage56en_HK
dc.identifier.epage59en_HK
dc.identifier.isiWOS:000235270500011-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridFeng, HP=11739019400en_HK
dc.identifier.scopusauthoridCheng, MY=23011775600en_HK
dc.identifier.scopusauthoridWang, YL=7601496246en_HK
dc.identifier.scopusauthoridChang, SC=7405603235en_HK
dc.identifier.scopusauthoridWang, YY=36068544500en_HK
dc.identifier.scopusauthoridWan, CC=7201485197en_HK
dc.identifier.issnl0040-6090-

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