File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Impurities induced localized corrosion between copper and tantalum nitride during chemical mechanical planarization

TitleImpurities induced localized corrosion between copper and tantalum nitride during chemical mechanical planarization
Authors
KeywordsCorrosion
Defects
Polarization
Secondary ion mass spectrometry
Tantalum compounds
Chemical mechanical planarization
Galvanic corrosion
Potentiodynamic polarization
Interfaces (materials)
Issue Date2007
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
Citation
Electrochemical And Solid-State Letters, 2007, v. 10 n. 1, p. H23-H26 How to Cite?
AbstractUsing chemical mechanical planarization, the reaction which causes the formation of localized defects between the interface between the copper (Cu) deposit and the tantalum nitride (TaN) barrier layer were studied. The experimental results of potentiodynamic polarization and secondary ion mass spectroscopy demonstrate that galvanic corrosion was not the dominant factor for such localized defects in our system, most impurities, such as carbon (C) and chloride ion (Cl-), aggregated near the interface between Cu deposit and TaN barrier layer. As a result, the correlation between localized defects at the CuTaN interface and the distribution of impurities is proposed herein. © 2006 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/142049
ISSN
2014 Impact Factor: 2.321
2015 SCImago Journal Rankings: 0.842
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLin, JYen_HK
dc.contributor.authorWang, YYen_HK
dc.contributor.authorWan, CCen_HK
dc.contributor.authorFeng, HPen_HK
dc.contributor.authorCheng, MYen_HK
dc.date.accessioned2011-10-10T07:13:51Z-
dc.date.available2011-10-10T07:13:51Z-
dc.date.issued2007en_HK
dc.identifier.citationElectrochemical And Solid-State Letters, 2007, v. 10 n. 1, p. H23-H26en_HK
dc.identifier.issn1099-0062en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142049-
dc.description.abstractUsing chemical mechanical planarization, the reaction which causes the formation of localized defects between the interface between the copper (Cu) deposit and the tantalum nitride (TaN) barrier layer were studied. The experimental results of potentiodynamic polarization and secondary ion mass spectroscopy demonstrate that galvanic corrosion was not the dominant factor for such localized defects in our system, most impurities, such as carbon (C) and chloride ion (Cl-), aggregated near the interface between Cu deposit and TaN barrier layer. As a result, the correlation between localized defects at the CuTaN interface and the distribution of impurities is proposed herein. © 2006 The Electrochemical Society.en_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/en_HK
dc.relation.ispartofElectrochemical and Solid-State Lettersen_HK
dc.subjectCorrosionen_US
dc.subjectDefectsen_US
dc.subjectPolarizationen_US
dc.subjectSecondary ion mass spectrometryen_US
dc.subjectTantalum compoundsen_US
dc.subjectChemical mechanical planarizationen_US
dc.subjectGalvanic corrosionen_US
dc.subjectPotentiodynamic polarizationen_US
dc.subjectInterfaces (materials)en_US
dc.titleImpurities induced localized corrosion between copper and tantalum nitride during chemical mechanical planarizationen_HK
dc.typeArticleen_HK
dc.identifier.emailFeng, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.2364309en_HK
dc.identifier.scopuseid_2-s2.0-33845359615en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33845359615&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume10en_HK
dc.identifier.issue1en_HK
dc.identifier.spageH23en_HK
dc.identifier.epageH26en_HK
dc.identifier.isiWOS:000242165400025-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLin, JY=24822648700en_HK
dc.identifier.scopusauthoridWang, YY=7601493418en_HK
dc.identifier.scopusauthoridWan, CC=7201485197en_HK
dc.identifier.scopusauthoridFeng, HP=11739019400en_HK
dc.identifier.scopusauthoridCheng, MY=26431814100en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats