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Article: Void defect reduction after chemical mechanical planarization of trenches filled by direct/pulse plating

TitleVoid defect reduction after chemical mechanical planarization of trenches filled by direct/pulse plating
Authors
KeywordsAnnealing
Chemical mechanical polishing
Copper
Crystal orientation
Deposition
Chemical mechanical planarization (CMP)
Pulse current (PC)
Pulse frequency
Void defect reduction
Crystal defects
Issue Date2007
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 2007, v. 154 n. 3, p. D139-D144 How to Cite?
AbstractThe effect of various frequencies of pulse current (PC) on the crystal orientation of copper deposit was investigated in this article. When PC frequency was lower than 100 Hz, high (111) (200) ratio after annealing was achieved and the amount of void defects was reduced after chemical mechanical planarization (CMP) process. In addition, the behaviors of additives depends on the pulse frequency were also studied and resulted in the different characteristics of copper deposits at various pulse frequencies. We therefore propose a modified deposition approach comprising direct current (dc) and PC which can reduce the void defects after CMP process based on the above experimental results. © 2007 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/142048
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLin, JYen_HK
dc.contributor.authorWan, CCen_HK
dc.contributor.authorWang, YYen_HK
dc.contributor.authorFeng, HPen_HK
dc.date.accessioned2011-10-10T07:13:51Z-
dc.date.available2011-10-10T07:13:51Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 2007, v. 154 n. 3, p. D139-D144en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142048-
dc.description.abstractThe effect of various frequencies of pulse current (PC) on the crystal orientation of copper deposit was investigated in this article. When PC frequency was lower than 100 Hz, high (111) (200) ratio after annealing was achieved and the amount of void defects was reduced after chemical mechanical planarization (CMP) process. In addition, the behaviors of additives depends on the pulse frequency were also studied and resulted in the different characteristics of copper deposits at various pulse frequencies. We therefore propose a modified deposition approach comprising direct current (dc) and PC which can reduce the void defects after CMP process based on the above experimental results. © 2007 The Electrochemical Society.en_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.subjectAnnealingen_US
dc.subjectChemical mechanical polishingen_US
dc.subjectCopperen_US
dc.subjectCrystal orientationen_US
dc.subjectDepositionen_US
dc.subjectChemical mechanical planarization (CMP)en_US
dc.subjectPulse current (PC)en_US
dc.subjectPulse frequencyen_US
dc.subjectVoid defect reductionen_US
dc.subjectCrystal defectsen_US
dc.titleVoid defect reduction after chemical mechanical planarization of trenches filled by direct/pulse platingen_HK
dc.typeArticleen_HK
dc.identifier.emailFeng, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.2409869en_HK
dc.identifier.scopuseid_2-s2.0-33846962890en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846962890&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume154en_HK
dc.identifier.issue3en_HK
dc.identifier.spageD139en_HK
dc.identifier.epageD144en_HK
dc.identifier.isiWOS:000243977500038-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLin, JY=24822648700en_HK
dc.identifier.scopusauthoridWan, CC=7201485197en_HK
dc.identifier.scopusauthoridWang, YY=7601493418en_HK
dc.identifier.scopusauthoridFeng, HP=11739019400en_HK

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