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Article: Behavior of copper removal by CMP and its correlation to deposit structure and impurity content

TitleBehavior of copper removal by CMP and its correlation to deposit structure and impurity content
Authors
KeywordsCrystal structure
Electroplated products
Impurities
Potentiodynamic polarization
Scanning electron microscopy
X ray diffraction
Close-packed planes
Defect generation
Electroplated copper films
Face-centered cubic structure
Metallic films
Issue Date2008
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 2008, v. 155 n. 1, p. H21-H25 How to Cite?
AbstractKnowledge of the removal behaviors of various electroplated copper films during chemical mechanical polishing (CMP) is important for thickness control and defect generation. In this paper, we investigate the effect of current density and impurities incorporated in blanket and pattern wafer by potentiodynamic polarization method, X-ray diffraction, and secondary ion mass spectroscopy. Defect count was decided by the optical scan method and scanning electron microscopy reviewing. Removal rate and corroded pits were found to decrease with increasing (111)/(200) ratio because (111), the close-packed plane of the face-centered cubic structure, has strong chemical resistance during polishing. Furthermore, incorporated impure atoms, such as carbon, chloride, and sulfur, tend to weaken grain boundaries to generate more corroded pits but do not affect removal rate. Besides, geometric constraint induces concentrated impurities to restrict copper grain growth and induce fast oxide growth rate, resulting in high dishing performance. © 2007 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/142047
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFeng, HPen_HK
dc.contributor.authorLin, JYen_HK
dc.contributor.authorCheng, MYen_HK
dc.contributor.authorWang, YYen_HK
dc.contributor.authorWan, CCen_HK
dc.date.accessioned2011-10-10T07:13:50Z-
dc.date.available2011-10-10T07:13:50Z-
dc.date.issued2008en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 2008, v. 155 n. 1, p. H21-H25en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142047-
dc.description.abstractKnowledge of the removal behaviors of various electroplated copper films during chemical mechanical polishing (CMP) is important for thickness control and defect generation. In this paper, we investigate the effect of current density and impurities incorporated in blanket and pattern wafer by potentiodynamic polarization method, X-ray diffraction, and secondary ion mass spectroscopy. Defect count was decided by the optical scan method and scanning electron microscopy reviewing. Removal rate and corroded pits were found to decrease with increasing (111)/(200) ratio because (111), the close-packed plane of the face-centered cubic structure, has strong chemical resistance during polishing. Furthermore, incorporated impure atoms, such as carbon, chloride, and sulfur, tend to weaken grain boundaries to generate more corroded pits but do not affect removal rate. Besides, geometric constraint induces concentrated impurities to restrict copper grain growth and induce fast oxide growth rate, resulting in high dishing performance. © 2007 The Electrochemical Society.en_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.subjectCrystal structureen_US
dc.subjectElectroplated productsen_US
dc.subjectImpuritiesen_US
dc.subjectPotentiodynamic polarizationen_US
dc.subjectScanning electron microscopyen_US
dc.subjectX ray diffractionen_US
dc.subjectClose-packed planesen_US
dc.subjectDefect generationen_US
dc.subjectElectroplated copper filmsen_US
dc.subjectFace-centered cubic structureen_US
dc.subjectMetallic filmsen_US
dc.titleBehavior of copper removal by CMP and its correlation to deposit structure and impurity contenten_HK
dc.typeArticleen_HK
dc.identifier.emailFeng, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.2801394en_HK
dc.identifier.scopuseid_2-s2.0-36448941885en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-36448941885&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume155en_HK
dc.identifier.issue1en_HK
dc.identifier.spageH21en_HK
dc.identifier.epageH25en_HK
dc.identifier.isiWOS:000251241400062-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFeng, HP=11739019400en_HK
dc.identifier.scopusauthoridLin, JY=24822648700en_HK
dc.identifier.scopusauthoridCheng, MY=23011775600en_HK
dc.identifier.scopusauthoridWang, YY=7601493418en_HK
dc.identifier.scopusauthoridWan, CC=7201485197en_HK

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