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Article: Effect of impurity and illumination on copper oxidation after chemical mechanical polishing

TitleEffect of impurity and illumination on copper oxidation after chemical mechanical polishing
Authors
KeywordsAgricultural products
Chemical mechanical polishing
Chemical polishing
Copper
Copper oxides
Crystal growth
Epitaxial growth
Grain boundaries
Grain size and shape
Growth rate
Molecular orbitals
Molecular spectroscopy
Nucleation
Optical correlation
Oxygen
Photoacoustic effect
Photoelectron spectroscopy
Polishing
Rate constants
Steel analysis
Sulfur
X ray photoelectron spectroscopy
(1 1 0) surface
(O-sec.-butyldithiocarbonatio-S ,S') copper
Copper oxidation
Electrochemical Society (ECS)
Electron carriers
Illumination effects
impurity content
mechanical polishing
Nucleation sites
Optical (PET) (OPET)
Sulfur contents
X ray photoelectron spectroscopy (XPS)
Chemical finishing
Issue Date2008
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 2008, v. 155 n. 8, p. H620-H624 How to Cite?
AbstractCopper-oxide defect is initiated at the grain boundary on the interconnect surface, and size increases with time and finally reaches a fixed value over a period of time after chemical mechanical polishing. The growth rate of copper oxide increases with increasing impurity content, resulting in more nucleation sites. Illumination significantly enhances and accelerates the growth rate at the initial nucleation stage by providing more electron carriers and acceptors for copper-oxide generation. Additionally, the nucleated reaction can be enhanced by illumination at the grain boundary with more sulfur content. Optical scan and X-ray photoelectron spectroscopy results prove that the illumination effect has a stronger correlation to sulfur than carbon or oxygen. © 2008 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/142046
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFeng, HPen_HK
dc.contributor.authorLin, JYen_HK
dc.contributor.authorWang, YYen_HK
dc.contributor.authorWan, CCen_HK
dc.date.accessioned2011-10-10T07:13:49Z-
dc.date.available2011-10-10T07:13:49Z-
dc.date.issued2008en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 2008, v. 155 n. 8, p. H620-H624en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142046-
dc.description.abstractCopper-oxide defect is initiated at the grain boundary on the interconnect surface, and size increases with time and finally reaches a fixed value over a period of time after chemical mechanical polishing. The growth rate of copper oxide increases with increasing impurity content, resulting in more nucleation sites. Illumination significantly enhances and accelerates the growth rate at the initial nucleation stage by providing more electron carriers and acceptors for copper-oxide generation. Additionally, the nucleated reaction can be enhanced by illumination at the grain boundary with more sulfur content. Optical scan and X-ray photoelectron spectroscopy results prove that the illumination effect has a stronger correlation to sulfur than carbon or oxygen. © 2008 The Electrochemical Society.en_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.subjectAgricultural productsen_US
dc.subjectChemical mechanical polishingen_US
dc.subjectChemical polishingen_US
dc.subjectCopperen_US
dc.subjectCopper oxidesen_US
dc.subjectCrystal growthen_US
dc.subjectEpitaxial growthen_US
dc.subjectGrain boundariesen_US
dc.subjectGrain size and shapeen_US
dc.subjectGrowth rateen_US
dc.subjectMolecular orbitalsen_US
dc.subjectMolecular spectroscopyen_US
dc.subjectNucleationen_US
dc.subjectOptical correlationen_US
dc.subjectOxygenen_US
dc.subjectPhotoacoustic effecten_US
dc.subjectPhotoelectron spectroscopyen_US
dc.subjectPolishingen_US
dc.subjectRate constantsen_US
dc.subjectSteel analysisen_US
dc.subjectSulfuren_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subject(1 1 0) surfaceen_US
dc.subject(O-sec.-butyldithiocarbonatio-S ,S') copperen_US
dc.subjectCopper oxidationen_US
dc.subjectElectrochemical Society (ECS)en_US
dc.subjectElectron carriersen_US
dc.subjectIllumination effectsen_US
dc.subjectimpurity contenten_US
dc.subjectmechanical polishingen_US
dc.subjectNucleation sitesen_US
dc.subjectOptical (PET) (OPET)en_US
dc.subjectSulfur contentsen_US
dc.subjectX ray photoelectron spectroscopy (XPS)en_US
dc.subjectChemical finishingen_US
dc.titleEffect of impurity and illumination on copper oxidation after chemical mechanical polishingen_HK
dc.typeArticleen_HK
dc.identifier.emailFeng, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.2946713en_HK
dc.identifier.scopuseid_2-s2.0-46649114989en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-46649114989&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume155en_HK
dc.identifier.issue8en_HK
dc.identifier.spageH620en_HK
dc.identifier.epageH624en_HK
dc.identifier.isiWOS:000257421600058-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFeng, HP=11739019400en_HK
dc.identifier.scopusauthoridLin, JY=24822648700en_HK
dc.identifier.scopusauthoridWang, YY=7601493418en_HK
dc.identifier.scopusauthoridWan, CC=7201485197en_HK

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