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Article: Displacement reactions between metal ions and nitride barrier layer/silicon substrate

TitleDisplacement reactions between metal ions and nitride barrier layer/silicon substrate
Authors
KeywordsAuger electron spectroscopy
Electrodeposition
Infrared spectroscopy
Integrated circuits
Ions
Nitrides
Nuclear magnetic resonance spectroscopy
Raman spectroscopy
Scanning electron microscopy
Silicon
X ray photoelectron spectroscopy
Displacement reactions
Interfaces (materials)
Issue Date2002
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 2002, v. 149 n. 5, p. G309-G317 How to Cite?
AbstractNitride materials such as TiN and TaN have been used in the integrated circuit industry. These materials serve as the crucial barrier layer between copper and the dielectric layer, and hence should be chemically inert. However, a displacement reaction still occurs between these nitride barriers and some metal ions such as Cu2+, Ag+, and Pd2+ in the presence of F-. This spontaneous reaction results in the deposition of metal, and a similar reaction takes place between the metal ions and the underlying silicon substrate. Three possible mechanisms are proposed and discussed in this study. The proposed mechanisms and the details of displacement reaction were elucidated by using Auger electron spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, nuclear magnetic resonance spectroscopy, inductively coupled plasma atomic emission spectrometer, Raman and infrared spectroscopy. TiN was found to oxidize with the formation of TiF6 2-. Despite being regarded as a contaminant, the deposited Pd was found to be capable of serving as the platform on nitride barrier for subsequent electrodeposition of Cu. © 2002 The Electrochemical Society. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/142043
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWu, Yen_HK
dc.contributor.authorChen, WCen_HK
dc.contributor.authorFeng, HPen_HK
dc.contributor.authorWan, CCen_HK
dc.contributor.authorWang, YYen_HK
dc.date.accessioned2011-10-10T07:13:47Z-
dc.date.available2011-10-10T07:13:47Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 2002, v. 149 n. 5, p. G309-G317en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142043-
dc.description.abstractNitride materials such as TiN and TaN have been used in the integrated circuit industry. These materials serve as the crucial barrier layer between copper and the dielectric layer, and hence should be chemically inert. However, a displacement reaction still occurs between these nitride barriers and some metal ions such as Cu2+, Ag+, and Pd2+ in the presence of F-. This spontaneous reaction results in the deposition of metal, and a similar reaction takes place between the metal ions and the underlying silicon substrate. Three possible mechanisms are proposed and discussed in this study. The proposed mechanisms and the details of displacement reaction were elucidated by using Auger electron spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, nuclear magnetic resonance spectroscopy, inductively coupled plasma atomic emission spectrometer, Raman and infrared spectroscopy. TiN was found to oxidize with the formation of TiF6 2-. Despite being regarded as a contaminant, the deposited Pd was found to be capable of serving as the platform on nitride barrier for subsequent electrodeposition of Cu. © 2002 The Electrochemical Society. All rights reserved.en_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.subjectAuger electron spectroscopyen_US
dc.subjectElectrodepositionen_US
dc.subjectInfrared spectroscopyen_US
dc.subjectIntegrated circuitsen_US
dc.subjectIonsen_US
dc.subjectNitridesen_US
dc.subjectNuclear magnetic resonance spectroscopyen_US
dc.subjectRaman spectroscopyen_US
dc.subjectScanning electron microscopyen_US
dc.subjectSiliconen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectDisplacement reactionsen_US
dc.subjectInterfaces (materials)en_US
dc.titleDisplacement reactions between metal ions and nitride barrier layer/silicon substrateen_HK
dc.typeArticleen_HK
dc.identifier.emailFeng, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.1464885en_HK
dc.identifier.scopuseid_2-s2.0-0036573256en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036573256&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume149en_HK
dc.identifier.issue5en_HK
dc.identifier.spageG309en_HK
dc.identifier.epageG317en_HK
dc.identifier.isiWOS:000175275700054-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWu, Y=35363272600en_HK
dc.identifier.scopusauthoridChen, WC=23995210500en_HK
dc.identifier.scopusauthoridFong, HP=11739019400en_HK
dc.identifier.scopusauthoridWan, CC=7201485197en_HK
dc.identifier.scopusauthoridWang, YY=7601493418en_HK

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