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Article: Electroless Cu deposition process on TiN for ULSI interconnect fabrication via Pd/Sn colloid activation

TitleElectroless Cu deposition process on TiN for ULSI interconnect fabrication via Pd/Sn colloid activation
Authors
KeywordsColloid
Cu
Electroless
Pd
ULSI
Issue Date2003
PublisherSpringer New York LLC
Citation
Journal Of Electronic Materials, 2003, v. 32 n. 1, p. 9-17 How to Cite?
AbstractIn this study, (100)-orientation silicon wafer coated with TiN barrier is catalyzed by a Pd/Sn colloid, which serves as an activator for electroless copper deposition. After activation, electroless deposition of Cu occurs on the catalytic surface. The coverage of the Cu deposit reaches 100% and the adsorptive amount of Pd is greatly increased by the conditioning process. The correlation between deposition rate, resistivity, morphology, crystal structure, and composition of the deposit when varying the temperature of the plating bath is discussed. The deposition rate of Cu is monitored by both the electrochemical method and the profilometer (α-step), while the other properties of the deposit are measured by four-point probe, scanning electron microscopy (SEM), x-ray diffraction (XRD), and Auger electron microscopy (AES). Deposition at 70 °C is favorable due to the higher deposition rate, lower resistivity, less impurities, and more preferred orientation in the crystal structure than that at lower temperature. Problems regarding adhesion and high resistivity can be greatly mitigated via 400 °C thermal annealing. The resistivity of Cu can be reduced to 2.2 μωcm. Moreover, trenches of 1 μm and 0.25 μm on patterned wafer have been successfully filled by electroless deposition of Cu with the aid of surfactant C12.
Persistent Identifierhttp://hdl.handle.net/10722/142042
ISSN
2015 Impact Factor: 1.491
2015 SCImago Journal Rankings: 0.609
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFeng, HPen_HK
dc.contributor.authorWu, Yen_HK
dc.contributor.authorWang, YYen_HK
dc.contributor.authorWan, CCen_HK
dc.date.accessioned2011-10-10T07:13:47Z-
dc.date.available2011-10-10T07:13:47Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal Of Electronic Materials, 2003, v. 32 n. 1, p. 9-17en_HK
dc.identifier.issn0361-5235en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142042-
dc.description.abstractIn this study, (100)-orientation silicon wafer coated with TiN barrier is catalyzed by a Pd/Sn colloid, which serves as an activator for electroless copper deposition. After activation, electroless deposition of Cu occurs on the catalytic surface. The coverage of the Cu deposit reaches 100% and the adsorptive amount of Pd is greatly increased by the conditioning process. The correlation between deposition rate, resistivity, morphology, crystal structure, and composition of the deposit when varying the temperature of the plating bath is discussed. The deposition rate of Cu is monitored by both the electrochemical method and the profilometer (α-step), while the other properties of the deposit are measured by four-point probe, scanning electron microscopy (SEM), x-ray diffraction (XRD), and Auger electron microscopy (AES). Deposition at 70 °C is favorable due to the higher deposition rate, lower resistivity, less impurities, and more preferred orientation in the crystal structure than that at lower temperature. Problems regarding adhesion and high resistivity can be greatly mitigated via 400 °C thermal annealing. The resistivity of Cu can be reduced to 2.2 μωcm. Moreover, trenches of 1 μm and 0.25 μm on patterned wafer have been successfully filled by electroless deposition of Cu with the aid of surfactant C12.en_HK
dc.publisherSpringer New York LLCen_US
dc.relation.ispartofJournal of Electronic Materialsen_HK
dc.subjectColloiden_HK
dc.subjectCuen_HK
dc.subjectElectrolessen_HK
dc.subjectPden_HK
dc.subjectULSIen_HK
dc.titleElectroless Cu deposition process on TiN for ULSI interconnect fabrication via Pd/Sn colloid activationen_HK
dc.typeArticleen_HK
dc.identifier.emailFong, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0037237023en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037237023&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume32en_HK
dc.identifier.issue1en_HK
dc.identifier.spage9en_HK
dc.identifier.epage17en_HK
dc.identifier.isiWOS:000181249300003-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFong, HP=11739019400en_HK
dc.identifier.scopusauthoridWu, Y=35363272600en_HK
dc.identifier.scopusauthoridWang, YY=7601493418en_HK
dc.identifier.scopusauthoridWan, CC=7201485197en_HK

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