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Article: Nanoparticle-enabled selective electrodeposition

TitleNanoparticle-enabled selective electrodeposition
Authors
KeywordsAdhesion
Conductive glasses
Electroplating
Nanoparticles
Nanosphere lithography
Issue Date2011
PublisherWiley - V C H Verlag GmbH & Co KGaA
Citation
Advanced Materials, 2011, v. 23 n. 21, p. 2454-2459 How to Cite?
Abstract
Electrodeposition of a material onto a conducting substrate with strong adhesion and exceptional uniformity through the use of platinum nanoparticles as the seed layer is reported. The use of platinum nanoparticles also creates an optimum voltage range to selectively electroplate various metals on substrate into areas seeded with the nanoparticles. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/142040
ISSN
2013 Impact Factor: 15.409
2013 SCImago Journal Rankings: 7.857
ISI Accession Number ID
Funding AgencyGrant Number
National Science Council of Republic of China, Taiwan
U.S. Department of Energy, Office of Science, Office of Basic Energy SciencesDE-SC0001299
Funding Information:

The authors thank Dr. S. Shen for very helpful discussions, Jonathan K. Tong for editorial assistance, and the Postdoctoral Research Abroad Program supported by National Science Council of Republic of China, Taiwan. This work is supported partially as part of the "Solid State Solar-Thermal Energy Conversion Center" (S3TEC), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number: DE-SC0001299 (G.C. and Z.F.R.).

References

 

Author Affiliations
  1. Massachusetts Institute of Technology
  2. Boston College
DC FieldValueLanguage
dc.contributor.authorFeng, HPen_HK
dc.contributor.authorPaudel, Ten_HK
dc.contributor.authorYu, Ben_HK
dc.contributor.authorChen, Sen_HK
dc.contributor.authorRen, ZFen_HK
dc.contributor.authorChen, Gen_HK
dc.date.accessioned2011-10-10T07:13:44Z-
dc.date.available2011-10-10T07:13:44Z-
dc.date.issued2011en_HK
dc.identifier.citationAdvanced Materials, 2011, v. 23 n. 21, p. 2454-2459en_HK
dc.identifier.issn0935-9648en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142040-
dc.description.abstractElectrodeposition of a material onto a conducting substrate with strong adhesion and exceptional uniformity through the use of platinum nanoparticles as the seed layer is reported. The use of platinum nanoparticles also creates an optimum voltage range to selectively electroplate various metals on substrate into areas seeded with the nanoparticles. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaAen_US
dc.relation.ispartofAdvanced Materialsen_HK
dc.subjectAdhesionen_US
dc.subjectConductive glassesen_US
dc.subjectElectroplatingen_US
dc.subjectNanoparticlesen_US
dc.subjectNanosphere lithographyen_US
dc.subject.meshAdhesives - chemistryen_HK
dc.subject.meshElectric Conductivityen_HK
dc.subject.meshElectroplating - methodsen_HK
dc.subject.meshMetal Nanoparticles - chemistryen_HK
dc.subject.meshOxides - chemistryen_HK
dc.subject.meshPlatinum - chemistryen_HK
dc.subject.meshSurface Propertiesen_HK
dc.titleNanoparticle-enabled selective electrodepositionen_HK
dc.typeArticleen_HK
dc.identifier.emailFeng, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201004656en_HK
dc.identifier.pmid21538987en_HK
dc.identifier.scopuseid_2-s2.0-79957861908en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79957861908&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue21en_HK
dc.identifier.spage2454en_HK
dc.identifier.epage2459en_HK
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000291732000009-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridFeng, HP=11739019400en_HK
dc.identifier.scopusauthoridPaudel, T=24476822900en_HK
dc.identifier.scopusauthoridYu, B=36351350900en_HK
dc.identifier.scopusauthoridChen, S=52463257000en_HK
dc.identifier.scopusauthoridRen, ZF=7402408354en_HK
dc.identifier.scopusauthoridChen, G=35228853000en_HK

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