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Article: Effect of plating current density and annealing on impurities in electroplated Cu film

TitleEffect of plating current density and annealing on impurities in electroplated Cu film
Authors
KeywordsActivation energy
Annealing
Current density
Desorption
Plating
Secondary ion mass spectrometry
Electroplated copper films
Plating current density
Thermal annealing
Copper
Issue Date2005
PublisherAmerican Vacuum Society. The Journal's web site is located at http://ojps.aip.org/jvsta/
Citation
Journal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films, 2005, v. 23 n. 4, p. 658-662 How to Cite?
AbstractThis study uses secondary-ion-mass spectrometry to examine the effects of plating current density and annealing temperature on the nature of electroplated copper (Cu) films. The experimental results reveal that high levels of impurities, such as C, O, S, and Cl, are incorporated into Cu deposits at the lower current density region while superfilling occurs. The C and O impurities can be released from the plated films by thermal annealing, while S and Cl cannot. This work proposes a possible mechanism based on bond strength to explain the phenomena. Rapid C and O desorption is observed when the films are first cycled to 220 °C immediately after electroplating. The activation energy of C desorption is found to be approximately 9.8 kJmol. For Cu electroplating, this investigation suggests that high plating current density and an adequate annealing temperature are required to reduce impurities. © 2005 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/142037
ISSN
2015 Impact Factor: 1.724
2015 SCImago Journal Rankings: 0.339
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, CWen_HK
dc.contributor.authorWang, YLen_HK
dc.contributor.authorTsai, MSen_HK
dc.contributor.authorFeng, HPen_HK
dc.contributor.authorChang, SCen_HK
dc.contributor.authorHwang, GJen_HK
dc.date.accessioned2011-10-10T06:21:12Z-
dc.date.available2011-10-10T06:21:12Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films, 2005, v. 23 n. 4, p. 658-662en_HK
dc.identifier.issn0734-2101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142037-
dc.description.abstractThis study uses secondary-ion-mass spectrometry to examine the effects of plating current density and annealing temperature on the nature of electroplated copper (Cu) films. The experimental results reveal that high levels of impurities, such as C, O, S, and Cl, are incorporated into Cu deposits at the lower current density region while superfilling occurs. The C and O impurities can be released from the plated films by thermal annealing, while S and Cl cannot. This work proposes a possible mechanism based on bond strength to explain the phenomena. Rapid C and O desorption is observed when the films are first cycled to 220 °C immediately after electroplating. The activation energy of C desorption is found to be approximately 9.8 kJmol. For Cu electroplating, this investigation suggests that high plating current density and an adequate annealing temperature are required to reduce impurities. © 2005 American Vacuum Society.en_HK
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://ojps.aip.org/jvsta/en_HK
dc.relation.ispartofJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_HK
dc.subjectActivation energyen_US
dc.subjectAnnealingen_US
dc.subjectCurrent densityen_US
dc.subjectDesorptionen_US
dc.subjectPlatingen_US
dc.subjectSecondary ion mass spectrometryen_US
dc.subjectElectroplated copper filmsen_US
dc.subjectPlating current densityen_US
dc.subjectThermal annealingen_US
dc.subjectCopperen_US
dc.titleEffect of plating current density and annealing on impurities in electroplated Cu filmen_HK
dc.typeArticleen_HK
dc.identifier.emailFeng, HP:hpfeng@hku.hken_HK
dc.identifier.authorityFeng, HP=rp01533en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.1931679en_HK
dc.identifier.scopuseid_2-s2.0-31044446089en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-31044446089&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue4en_HK
dc.identifier.spage658en_HK
dc.identifier.epage662en_HK
dc.identifier.isiWOS:000230717200016-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, CW=7409786347en_HK
dc.identifier.scopusauthoridWang, YL=7601496246en_HK
dc.identifier.scopusauthoridTsai, MS=7403551693en_HK
dc.identifier.scopusauthoridFeng, HP=11739019400en_HK
dc.identifier.scopusauthoridChang, SC=7405603235en_HK
dc.identifier.scopusauthoridHwang, GJ=7202677655en_HK

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