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postgraduate thesis: Growth of Bi2Se3 on Si substrate by molecular beam epitaxy

TitleGrowth of Bi2Se3 on Si substrate by molecular beam epitaxy
Authors
Advisors
Advisor(s):Xie, MH
Issue Date2011
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
DegreeMaster of Philosophy
SubjectMolecular beam epitaxy.
Silicon.
Bismuth compounds.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorXie, MH-
dc.contributor.authorKan, Xin.-
dc.contributor.author阚欣.-
dc.date.issued2011-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B46474687-
dc.subject.lcshMolecular beam epitaxy.-
dc.subject.lcshSilicon.-
dc.subject.lcshBismuth compounds.-
dc.titleGrowth of Bi2Se3 on Si substrate by molecular beam epitaxy-
dc.typePG_Thesis-
dc.identifier.hkulb4647468-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b4647468-
dc.date.hkucongregation2011-

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