Postgraduate Thesis: Growth of Bi2Se3 on Si substrate by molecular beam epitaxy

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TitleGrowth of Bi2Se3 on Si substrate by molecular beam epitaxy
AuthorsKan, Xin.
阚欣.
Issue Date2011
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
AdvisorsXie, MH
DegreeMaster of Philosophy
SubjectMolecular beam epitaxy.
Silicon.
Bismuth compounds.
Dept/ProgramPhysics
DOIhttp://dx.doi.org/10.5353/th_b4647468
DC Field
Value
dc.contributor.advisorXie, MH
dc.contributor.authorKan, Xin.
dc.contributor.author阚欣.
dc.date.hkucongregation2011
dc.date.issued2011
dc.description.naturepublished_or_final_version
dc.description.thesisdisciplinePhysics
dc.description.thesislevelmaster's
dc.description.thesisnameMaster of Philosophy
dc.identifier.doihttp://dx.doi.org/10.5353/th_b4647468
dc.identifier.hkulb4647468
dc.languageeng
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
dc.relation.ispartofHKU Theses Online (HKUTO)
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.source.urihttp://hub.hku.hk/bib/B46474687
dc.subject.lcshMolecular beam epitaxy.
dc.subject.lcshSilicon.
dc.subject.lcshBismuth compounds.
dc.titleGrowth of Bi2Se3 on Si substrate by molecular beam epitaxy
dc.typePG_Thesis