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Postgraduate Thesis: Growth of Bi2Se3 on Si substrate by molecular beam epitaxy
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TitleGrowth of Bi2Se3 on Si substrate by molecular beam epitaxy
 
AuthorsKan, Xin.
阚欣.
 
Issue Date2011
 
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
AdvisorsXie, MH
 
DegreeMaster of Philosophy
 
SubjectMolecular beam epitaxy.
Silicon.
Bismuth compounds.
 
Dept/ProgramPhysics
 
DOIhttp://dx.doi.org/10.5353/th_b4647468
 
DC FieldValue
dc.contributor.advisorXie, MH
 
dc.contributor.authorKan, Xin.
 
dc.contributor.author阚欣.
 
dc.date.hkucongregation2011
 
dc.date.issued2011
 
dc.description.naturepublished_or_final_version
 
dc.description.thesisdisciplinePhysics
 
dc.description.thesislevelmaster's
 
dc.description.thesisnameMaster of Philosophy
 
dc.identifier.doihttp://dx.doi.org/10.5353/th_b4647468
 
dc.identifier.hkulb4647468
 
dc.languageeng
 
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
dc.relation.ispartofHKU Theses Online (HKUTO)
 
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.source.urihttp://hub.hku.hk/bib/B46474687
 
dc.subject.lcshMolecular beam epitaxy.
 
dc.subject.lcshSilicon.
 
dc.subject.lcshBismuth compounds.
 
dc.titleGrowth of Bi2Se3 on Si substrate by molecular beam epitaxy
 
dc.typePG_Thesis
 
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